Semiconductor transducer or actuator utilizing corrugated supports

• US 5,177,579 A
• Filed: 08/30/1991
• Issued: 01/05/1993
• Est. Priority Date: 04/07/1989
• Status: Expired due to Fees

• Current Assignee: IC Sensors, Inc. (TE Connectivity Ltd. (United Kingdom))
• Original Assignee: IC Sensors, Inc. (TE Connectivity Ltd. (United Kingdom))
• Inventors: Jerman, John H.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/753,608
• Time in Patent Office: 494 Days
• Field of Search: 357/25, 357/26, 357/51, 357/55, 73/DIG. 4, 73/31.04, 73/31.06, 251/61, 251/61.1, 200/61.25, 200/61.45 R, 200/83 N, 200/83 V, 307/117, 338/4
• US Class Current: 73/724
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A semiconductor transducer or actuator is disclosed. The transducer and actuator each include a deflecting member with corrugations producing increased vertical travel which is a linear function of applied force. An accurate and easily controlled method that is insensitive to front-to-back alignment is also disclosed for forming uniform corrugations of precise thickness; independent of the thickness of the deflecting member. The cross-sectional shape of the corrugations is not limited by the etching technique, so that any configuration thereof is enabled.

Claims

1. A semiconductor transducer comprising:

a semiconductor layer having a centrally positioned, substantially rigid deflecting member, a support member, and a plurality of corrugations formed between said deflecting member and said support member, said corrugations enabling said deflecting member to move with respect to said support member in response to an applied force; and

means for sensing the deflection of said deflecting member and for developing an electrical signal as a function of the sensed deflection of said deflecting member.

2. The semiconductor transducer of claim 1 wherein said sensing means is selectively disposed on said deflecting member such that a force perpendicular to the plane of said semiconductor layer can be measured.

3. The semiconductor transducer of claim 2 wherein said sensing means includes a first metal plate disposed on said deflecting member and a second metal plate fixed in a spaced apart and substantially parallel position with respect to said first plate.

4. The semiconductor transducer of claim 1 further comprising a substrate having a well formed in one surface thereof, said support member being coupled to said substrate about the periphery of said well.

5. The semiconductor transducer of claim 4 wherein said sensing means includes means for capacitively sensing the amount of deflection of said deflecting member with respect to said substrate.

6. The semiconductor transducer of claim 1 wherein said deflecting member has a first predetermined thickness and said plurality of corrugations have a second predetermined thickness.

7. The semiconductor transducer of claim 1 wherein said semiconductor layer is silicon.

8. The semiconductor transducer of claim 1 wherein said plurality of corrugations are disposed concentrically with respect to said deflecting member.

9. The semiconductor transducer of claim 1 wherein said plurality of corrugations form a spiral shape between said deflecting member and said support member.

10. The semiconductor transducer of claim 1 wherein said plurality of corrugations comprise grooves having a depth that is substantially less than the thickness of said support member.

11. The semiconductor transducer of claim 1 wherein the thickness of said deflecting member is substantially greater than the thickness of said plurality of corrugations.

12. A semiconductor transducer comprising:

a support member having a centrally positioned opening defined therein;

a substantially rigid deflecting member positioned in said opening;

a plurality of corrugations for supporting said deflecting member with respect to said support member, said corrugations enabling said deflecting member to be deflected with respect to said support member in response to an applied force, wherein said plurality of corrugations are composed of a material selected from a group consisting of silicon, sputtered metal, evaporated metal, plated metal, vapor deposited dielectric material, and polymers; and

means for sensing the deflection of said deflecting member and for developing electrical signals as a function of the sensed deflection of said deflecting member.

13. A semiconductor transducer comprising:

a semiconductor substrate having a bottom section and an upwardly extending section coupled to one end of said bottom section;

a bending member including a beam member and a plurality of corrugations coupled between said beam member and said upwardly extending member; and

means for sensing the movement of said beam member and for developing an electrical signal as a function of the sensed movement of said beam member.

14. The semiconductor transducer of claim 13 wherein said beam member and said substrate are composed of silicon.

15. The semiconductor transducer of claim 13 wherein said corrugations are composed of a material selected from a group consisting of silicon, sputtered metal, evaporated metal, plated metal, vapor deposited dielectric material, and polymers.

16. The semiconductor transducer of claim 13 wherein said sensing means includes means for capacitively sensing the amount of deflection of said deflecting member with respect to said bottom section of said substrate.

17. The semiconductor transducer of claim 13 wherein said sensing means includes a switch having a first contact on said beam member and a second contact on said bottom section such that for an applied force greater than some predetermined amount, said beam member deflects far enough to close said switch.

18. The semiconductor transducer of claim 13 wherein said plurality of corrugations comprises grooves having a depth that is substantially less than the thickness of said upwardly extending section.

19. The semiconductor transducer of claim 13 wherein the thickness of said beam member is substantially greater than the thickness of said plurality of corrugations.

20. The semiconductor transducer of claim 13 wherein said substrate and said bending member are formed from a single wafer of silicon material.