Capacitor-carrying semiconductor module

• US 5,177,670 A
• Filed: 02/07/1992
• Issued: 01/05/1993
• Est. Priority Date: 02/08/1991
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Abe, Yoichi, Nakanishi, Keiichirou, Suzuki, Hideo, Kato, Akira, Takahashi, Masaaki, Inoue, Hirokazu, Yamada, Kazuji, Shinohara, Hiroichi
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US07/832,332
• Time in Patent Office: 333 Days
• Field of Search: 361/306, 361/320, 361/321, 361/400, 361/401, 361/388, 361/402, 361/395, 357/51, 357/65, 357/68, 357/80, 357/74, 174/68.5, 174/52 FP
• US Class Current: 361/738
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/467 by flowing gases, e.g. air H01L23/473 takes precedence
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01018 Argon [Ar]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H05K 7/20 : Modifications to facilitate cooling, ventilating, or heating
• CPC Class Codes: Y10S 257/924 : with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap

Abstract

Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electrode of the capacitor is 0.05 nanohenry. The lower inductance from the LSI to the capacitor allows a reduction in the amount of the noise at high frequencies among those generated in power supply system, whereby the rising time of signals is made shorter, and the speed of arithmetic operation can be increased.

Claims

1. A capacitor-carrying semiconductor module, which comprises;

a thin film wiring board comprising an organic material layer and conductive wiring lines fromed thereon;

a ceramic circuit substrate comprising a ceramic insulating layer and wiring lines formed thereon, said thin film wiring board being formed on said ceramic circuit substrate; and

an LSI mounted on an electric connection formed on said thin film wiring board, wherein capacitors are disposed between said ceramic circuit substrate and said electric connections.

2. The capacitor-carrying semiconductor module according to claim 1, wherein the capacitors are inside of the thin film wiring board.

3. The capacitor-carrying semiconductor module according to claim 1, wherein a through hole is formed in the ceramic insulating layer of the ceramic circuit substrate, and a power line or ground line is formed in the through hole.

4. The capacitor-carrying semiconductor module according to claim 1, wherein the ceramic circuit substrate comprises a plurality of ceramic insulating layers each carrying wiring lines thereon.

5. A capacitor-carrying semiconductor module, which comprises;

a thin film wiring board comprising a plurality of organic material layers each carrying a layer of conductive wiring lines thereon;

a ceramic circuit substrate comprising a plurality of ceramic insulating layers each carrying a layer of wiring lines thereon, said thin film wiring board being formed on said ceramic circuit substrate; and

a plurality of LSIs mounted on electric connections formed on said thin film wiring board, wherein capacitors are disposed between said ceramic circuit substrate and said electric connections.

6. The capacitor-carrying semiconductor module according to claim 5, wherein the capacitors are inside of the thin film wiring board.

7. The capacitor-carrying semiconductor module according to claim 5, wherein through holes are formed in the ceramic insulating layer of the ceramic circuit substrate, and power lines or ground lines are formed in the through holes.

8. The capacitor-carrying semiconductor module according to claim 5, wherein the ceramic circuit substrate comprises a plurality of ceramic insulating layers each carrying wiring lines thereon.