Process for chemical vapor deposition of main group metal nitrides

• US 5,178,911 A
• Filed: 11/08/1991
• Issued: 01/12/1993
• Est. Priority Date: 11/30/1989
• Status: Expired due to Term

• Current Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Original Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Inventors: Hoffman, David, Riaz, Umar, Gordon, Roy G.
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): King, Roy V.
• Application Number:
  US07/790,576
• Time in Patent Office: 431 Days
• Field of Search: 427/255.2, 427/255.1, 427/255, 427/314, 427/248.1, 427/126.1
• US Class Current: 427/255.394
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence

Abstract

A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn₃ N₄, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100° C. to 400° C. resulting in deposition of a film on the substrate.

Claims

1. A process for making a main group metal nitride coating comprising the steps of:

forming a vaporous mixture of ammonia gas and a vapor of a main group metal amido compound, said main group metal selected from the group consisting of aluminum, gallium, tin and indium; and

exposing said vaporous mixture to a substrate to deposit said main group metal nitride coating on said substrate.

2. The process of claim 1 wherein said main group metal amido compound includes a dialkylamido functional group.

3. The process of claim 2 wherein said dialkylamido functional group includes a dimethylamido functional group.

4. The process of claim 2 wherein said dialkylamido functional group includes a diethylamido functional group.

5. The process of claim 1 wherein said main group metal amido compound includes a cyclic amido functional group.

6. The process of claim 5 wherein said cyclic amido functional group is selected from the group consisting of piperidino and pyrrolidino groups.

7. The process of claim 1 wherein said ammonia gas and said metal main group metal amido compound are individually diluted with an inert carrier gas before they are combined in close proximity to said substrate.

8. The process of claim 7 wherein said inert carrier gas is a gas selected from the group consisting of helium, nitrogen, argon or neon.

9. The process of claim 1 wherein said substrate is heated in the range of 100°

C. to 400°

C.

10. The process of claim 1 wherein said substrate is heated in the range of 150°

C. to 300°

C.

11. The process of claim 1 wherein said substrate is heated in the range of 200°

C. to 250°

C.

12. The process of claim 1 wherein said substrate is silicon, vitreous carbon, glass, steel or polyester.

13. The process of claim 1 wherein said substrate is an organic polymer that does not melt or decompose under reaction conditions of the deposition.

14. The process of claim 1 wherein said amido compound is hexakis(dimethylamido)dialuminum.

15. The process of claim 1 wherein said amido compound is hexakis(dimethylamido)dialuminum.

16. The process of claim 1 wherein said amido compound is tetrakis(dimethylamido)tin(IV).

17. The process of claim 1 wherein said amido compound is tetrakis(diethylamido)tin(IV).

18. The process of claim 2 wherein at least one of said dialkylamido functional groups is replaced by an alkyl group such that at least one dialkylamido group remains.

19. The process of claim 1 wherein said main group metal amido compound is a bis(trialkylsily)amido compound.