Contact pressure sensor

• US 5,179,956 A
• Filed: 06/26/1991
• Issued: 01/19/1993
• Est. Priority Date: 07/06/1990
• Status: Expired due to Term

• Current Assignee: Omron Healthcare Company Limited (Omron Corporation)
• Original Assignee: Colin Electronics Co., Ltd.
• Inventors: Yasui, Masanobu, Yamazaki, Toshimasa, Kondo, Tatsushi, Takahashi, Arihiro, Nakashima, Ryuji, Harada, Chikao, Kawamura, Norio
• Primary Examiner(s): Smith, Ruth S.
• Assistant Examiner(s): Jastrzab, Jeffrey R.
• Application Number:
  US07/721,317
• Time in Patent Office: 573 Days
• Field of Search: 73/756, 73/862.67, 73/754, 73/727, 128/687, 128/675, 128/690, 128/672, 128/688, 128/689
• US Class Current: 600/485
• CPC Class Codes: A61B 5/02233 Occluders specially adapted therefor tourniquets A61B17/132
• CPC Class Codes: Y10S 73/04 Piezoelectric

Abstract

A contact pressure sensor including a semiconductor chip having opposite surfaces, at least one pressure sensing element provided in one of the opposite surfaces of the chip, a spacer member supporting the other surface of the chip, a substrate having a surface to which the spacer member is fixed, the one surface of the chip being pressed against an object which produces a pressure, so that the at least one sensing element detects the pressure produced by the object, a first connection terminal provided in the one surface of the chip, a second connection terminal provided in the surface of the substrate, and a flexible flat cable connecting between the first and second connection terminals, the flexible flat cable being bent into two portions one of which extends along a side surface of the spacer member and the other of which extends along the surface of the substrate. The contact pressure sensor may further comprise a light-shading layer covering the one surface of the chip in which the at least one pressure sensing element is provided.

Claims

1. A contact pressure sensor comprising:

a semiconductor having opposite surfaces;

at least one pressure sensing element provided in one of said opposite surfaces of said chip;

a spacer member supporting the other surface of said chip, said spacer member having a side surface substantially flush with an edge of said chip;

a substrate having a surface to which said spacer member is fixed;

said one surface of said chip being adapted to be pressed against an object which produces a pressure, so that said at least one sensing element detects said pressure produced by said object;

a first connection terminal provided in said one surface of said chip adapted to be pressed against said object;

a second connection terminal provided in a free portion of said surface of said substrate which portion is free from said spacer member; and

a flexible flat cable connecting between said first and second connection terminals, said flexible flat cable being bent into two portions one of which extends along said side surface of said spacer member and the other of which extends along said free portion of said surface of said substrate.

2. The contact pressure sensor according to claim 1, wherein said flexible flat cable is constituted by a plurality of conductor lines spaced apart from each other and a flexible sheet supporting said conductor lines, said conductor lines being formed of metal foil, said flexible sheet being formed of resin.

3. The contact pressure sensor according to claim 1, wherein said flexible flat cable is bent such that said two portions are angled at about 90 degrees.

4. The contact pressure sensor according to claim 1, further comprising a covering member covering said one surface of said semiconductor chip, said flexible flat cable, said side surface of said spacer member, and said surface of said substrate.

5. The contact pressure sensor according to claim 4, further comprising a black, electrically conducting layer superposed on a portion of the covering member which portion is located directly above said one surface of said chip.

6. The contact pressure sensor according to claim 1, wherein each of said at least one pressure sensing element is constituted by a Wheatstone'"'"'s bridge including four semiconductor resistors.

7. The contact pressure sensor according to claim 1, further comprising an elastic diaphragm, and a sensor head case fixed at one of opposite surfaces thereof to said diaphragm and having a central recess in the other surface thereof, said substrate being accommodated within, and fixed to, said central recess of said sensor head case.

8. The contact pressure sensor according to claim 1, wherein said substrate includes a plate member formed of ceramics and a conductor pattern fixed to said plate member.

9. The contact pressure sensor according to claim 1, wherein said spacer member is formed of an electrical insulating material.

10. The contact pressure sensor according to claim 1, wherein said semiconductor chip is constituted by a monocrystalline-silicon plate.

11. The contact pressure sensor according to claim 10, further comprising a back-up plate formed of glass to which said semiconductor chip is adhered, said back-up plate having a hole formed therethrough for applying atmospheric pressure to said other surface of said semiconductor chip.

12. The contact pressure sensor according to claim 1, further comprising a casing having a central recess therein;

said substrate being located within said central recess; and

an elastic diaphragm coactive between the substrate and the casing for advancing the pressure sensing element with respect to the casing.

13. A contact pressure sensor comprising:

a semiconductor chip having opposite surfaces;

at least one pressure sensing element provided in one of said opposite surfaces of said chip;

said one surface of said chip being pressed against an object which produces a pressure, so that said at least one sensing element detects said pressure produced by said object; and

a light-shading layer covering said one surface of said chip in which said at least one pressure sensing element is provided, said light-shading layer being formed of a black and electrically conducting material.

14. The contact pressure sensor according to claim 13, further comprising a covering member covering said one surface of said semiconductor chip, said light-shading layer being superposed on said covering member.

15. The contact pressure sensor according to claim 14, wherein said covering member comprises a thin rubber layer provided on said one surface of said semiconductor chip.

16. The contact pressure sensor according to claim 13, further comprising a back-up plate to which the other one of said opposite surfaces of said semiconductor chip is adhered.

17. The contact pressure sensor according to claim 13, wherein said semiconductor chip includes an elongate diaphragm portion having a thickness smaller than a thickness of a different portion of said chip, said at least one pressure sensing element being provided in said diaphragm portion.

18. The contact pressure sensor according to claim 17, wherein said at least one pressure sensing element comprises a plurality of pressure sensing elements provided at regular intervals of distance in said elongate diaphragm portion of said semiconductor chip.

19. A contact pressure sensor comprising:

a semiconductor chip having opposite surfaces;

at least one pressure sensing element provided in one of said opposite surfaces of said chip;

said one surface of said chip being pressed against an object which produces a pressure, so that said at least one sensing element detects said pressure produced by said object;

a light-shading layer covering said one surface of said chip in which said at least one pressure sensing element is provided; and

a covering member covering said one surface of said semiconductor chip, said light-shading layer being superimposed on said covering member.

20. The contact pressure sensor according to claim 19, wherein said covering member comprise a thin rubber layer provided on said one surface of said semiconductor chip.

21. The contact pressure sensor according to claim 19, further comprising a back-up plate to which the other one of said opposite surfaces of said semiconductor chip is adhered.

22. The contact pressure sensor according to claim 19, wherein said one surface of said semiconductor chip includes an elongate diaphragm portion having a thickness smaller than a thickness of a different portion of said chip, said at least one pressure sensing element being provided in said diaphragm portion.

23. The contact pressure sensor according to claim 22, wherein said at least one pressure sensing element comprises a plurality of pressure sensing elements provided at regular intervals of distance in said elongate diaphragm portion of said semiconductor chip.