Etching system having simplified diffuser element removal

• US 5,180,467 A
• Filed: 08/10/1990
• Issued: 01/19/1993
• Est. Priority Date: 08/08/1990
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Milina, Daniel V., Cook, Roger D.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/565,621
• Time in Patent Office: 893 Days
• Field of Search: 156/345, 156/643, 156/646, 204/192.32, 204/298.33, 204/298.34, 204/298.35, 204/298.36, 204/298.37, 204/298.38, 204/298.39, 118/50.1, 118/620, 427/38, 427/39
• US Class Current: 156/345.34
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Using systems and methods wherein the diffuser element can be removed independently of upper electrode assembly removal, maintenance time associated with diffuser plate cleaning can be substantially reduced (e.g., several hours per week of operation). Because a diffuser element should typically be cleaned at least 3-4 times more frequently than the upper electrode assembly, maintenance costs over the course of an annual operating period can therefore be reduced significantly. Further, use of a diffuser element which can be independently removed permits portions of an upper electrode assembly to be frequently cleaned in place, thus further enhancing operability of the etching system without increasing operating costs.

Claims

1. A system for etching semiconductor wafers comprising:

an upper electrode assembly for producing a gas source, said upper electrode assembly including an upper electrode;

a ground grid assembly mounted to the upper electrode assembly and forming an area which receives gas from said gas source; and

a diffuser plate for diffusing said gas from said gas source into said area, said diffuser plate further including means for mounting said diffuser plate to said upper electrode assembly such that at least a portion of said diffuser plate can be removed from the wafer etching system independently of the upper electrode assembly.

10. System according to claim 1, further comprising:

a clamping ring assembly for sealing said plasma zone, said mounting means being accessible by removing said clamping ring assembly and said ground grid assembly.

11. System according to claim 10, wherein said diffusing plate further includes:

a ring-like element mounted to said upper electrode assembly; and

a hat-like element mounted to said ring-like element and having an elevated portion, a center portion of said ring-like element receiving said hat-like element when said diffuser plate is mounted to said upper electrode assembly.

12. System according to claim 1, further comprising:

a lower electrode assembly for supporting a wafer, said grid assembly being located between said upper electrode and said ground grid assembly.

2. A diffuser element for use in an area located between an upper electrode assembly and a ground grid assembly of a semiconductor wafer etching system having an upper electrode, a ground grid electrode and a lower electrode comprising:

means for diffusing gas in said semiconductor wafer etching system, said diffusing means including a first portion and a second portion located within said upper electrode assembly; and

means for mounting said first portion of said diffusing means to said upper electrode assembly such that said second portion of said diffusing means can be removed from said semiconductor wafer etching system independently of said upper electrode.

3. A diffuser element according to claim 2, wherein said first and second portions of said diffusing means are at least partially anodized.

4. A diffuser plate according to claim 2, wherein said first portion is a detachable, circular portion about a periphery of said second portion.

5. A diffuser element according to claim 4, wherein said second portion is formed as a hat-like element having an elevated portion.

6. A diffuser element according to claim 5, wherein said elevated portion is inserted into a receiving means of said first portion when said diffusing means is mounted to said upper electrode assembly.

7. A diffuser element according to claim 6, wherein said elevated portion is formed with a plurality of diffusing holes.

8. A diffusing element according to claim 7, wherein said diffusing holes are approximately 0.026 inches.

9. Method for disassembling a semiconductor wafer etching system having an upper electrode assembly for providing a source of gas into a plasma zone near a ground grid assembly via a diffuser plate comprising the steps of:

removing a clamping ring assembly which forms a sealed plasma zone;

removing a ground grid assembly which forms a ground electrode between said clamping ring assembly and said upper electrode assembly; and

,

removing a diffusing element of the diffuser plate from said semiconductor wafer etching system while leaving said upper electrode assembly mounted to said semiconductor wafer etching system.