Method for producing transparent conductive films
First Claim
1. A method of producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an optional additional of a donor element, said method comprising the steps of:
- maintaining an intensity of a magnetic field on a surface of a target at a level of at least 600 Oe; and
sputtering the target so as to form the transparent conductive film on a substrate by charging the target, simultaneously with said maintaining of the magnetic filed intensity, with a DC electric field superimposed with an RF electric field so as to lower the sputtering voltage to 250 volts or less.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.
-
Citations
3 Claims
-
1. A method of producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an optional additional of a donor element, said method comprising the steps of:
-
maintaining an intensity of a magnetic field on a surface of a target at a level of at least 600 Oe; and sputtering the target so as to form the transparent conductive film on a substrate by charging the target, simultaneously with said maintaining of the magnetic filed intensity, with a DC electric field superimposed with an RF electric field so as to lower the sputtering voltage to 250 volts or less. - View Dependent Claims (2, 3)
-
Specification