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Process for the wet-chemical surface treatment of semiconductor wafers

  • US 5,181,985 A
  • Filed: 03/06/1991
  • Issued: 01/26/1993
  • Est. Priority Date: 06/01/1988
  • Status: Expired due to Fees
First Claim
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1. A process for wet-chemical surface post-polishing cleaning of semiconductor wafers in a system where aqueous phases containing one or more chemically active substances having a gaseous state in solution chemically act on the surfaces of the said wafers comprising the steps of:

  • initially treating the water and the chemically active gaseous substances to reduce the quantity of contamination particles;

    introducing an effective amount of the chemically active substances in the gaseous state into the system;

    said chemically active substances are selected from the group consisting of the gases of ammonia, hydrogen chloride, hydrogen fluoride, ozone, ozonized oxygen, chlorine and bromine;

    introducing water at a temperature of 10°

    C. to 90°

    C. in the form of a mist into the system containing the semiconductor wafers;

    producing said mist by spraying water, feeding water through nozzles or aerosolizing water;

    forming the liquid phases chemically acting on the wafer surfaces within the system by the interaction of the gas phase and the mist; and

    exposing said wafer surfaces to said chemically acting liquid phases.

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