Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light

• US 5,182,718 A
• Filed: 03/29/1990
• Issued: 01/26/1993
• Est. Priority Date: 04/04/1989
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Co. (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Misaka, Akio, Hamaguchi, Hiromitsu, Harafuji, Kenji, Kawakita, Kenji
• Primary Examiner(s): Trans, Vincent N.
• Application Number:
  US07/500,926
• Time in Patent Office: 1,034 Days
• Field of Search: 364/488, 364/489, 364/490, 364/491, 250/491.1, 250/492.2, 250/492.3
• US Class Current: 430/30
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: H01J 37/3026 Patterning strategy

Abstract

A method of correcting design patterns in cells, having hierarchial structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone is provided having a predetermined width inside the boundary of each cell, and a second frame zone is provided having a predetermined width inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell directly overlying each cell for proximity effect.

Claims

1. A method of writing a pattern on a semiconductor sample based upon a resist pattern involving various design patterns by application of a charged-particle beam or light, said pattern being for use in manufacture of a semiconductor integrated circuit device having circuit portions corresponding to said pattern, said method comprising:

(a) obtaining pattern data representing design patterns included in a pattern;

(b) developing said pattern data such that said design patterns are arranged in cells having a hierarchical relationship and corresponding to exposure patterns on the sample to be exposed to a charged-particle beam or light;

(c) correcting said pattern data for proximity effects resulting from exposing resins coated on the sample to a charged-particle beam or to light by;

(i) providing a first frame zone having a predetermined width inside a boundary of each cell;

(ii) providing a second frame zone having a predetermined width inside said first frame zone; and

(iii) performing proximity effect correction operations to obtain a proximity-effect-corrected pattern such that a pattern in said second frame zone and a pattern inside said second frame zone are used as a pattern to be corrected and a pattern in said first frame zone is used as a reference pattern when correcting pattern data in said each cell for proximity effects and a pattern in said first frame zone in said each cell is added to the pattern to be corrected and a pattern in said second frame zone in said each cell is used as a reference pattern when correcting pattern data in a cell directly overlying said each cell for proximity effect; and

(d) writing said sample in accordance with said proximity-effect-corrected pattern.

2. A method according to claim 1 wherein in step (c) (iii) in respect of a plurality of identical cells, proximity effect correction operations are carried out for one of said identical cells, and the results of the proximity effect correction operations are applied to other identical cells.

3. A method according to claim 1 wherein in step (c) (iii), in respect of a cell of array structure having basic unit in the form of an element cell, all element cells enclosed by a series of element cells in said array structure cell are each provided with a frame zone present outside its boundary and having a predetermined width, and proximity effect correction operations are performed, when correcting pattern data in said enclosed element cell for proximity effects, such that pattern data in said enclosed element cell are all used as a pattern to be corrected and pattern data in said frame zone outside said enclosed element cell is used as a reference pattern.

4. A method according to claim 3 wherein the predetermined width of said frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

5. A method according to claim 3 wherein when, in respect of a cell having no array structure, patterns in said cell are arranged two-dimensionally periodically, said cell is reconstructed as a set of a plurality of array element cells and thereafter proximity effect correction operations are carried out.

6. A method according to claim 3 further comprising the step of further dividing each array element cell in the cell having array structure into a plurality of sub-zones and correcting patterns in each sub-zone of said array element cell for proximity effects.

7. A proximity effect correction method according to claim 1 wherein in step (c) (iii) in respect of a cell having a predetermined size, proximity effect correction operations are carried out for all patterns excepting those in the first frame zone inside the boundary of said cell such that a zone inside said first frame zone is divided into a plurality of sub-zones, each sub-zone is provided with a third frame zone present outside its boundary and having a predetermined width, pattern data in said each sub-zone are all used as a pattern to be corrected and a pattern in said third frame zone is used as a reference pattern.

8. A method according to claim 7 wherein the predetermined width of said third frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

9. A method according to claim 1 wherein the predetermined width of each of said first and second frame zones is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

10. A method of writing a pattern on a semiconductor sample based upon a resist pattern involving various design patterns by application of a charged-particle beam or light, said pattern being for use in manufacture of a semiconductor integrated circuit device having circuit portions corresponding to said pattern, said method comprising:

(a) obtaining pattern data representing design patterns included in a pattern;

(b) developing said pattern data such that said design patterns are arranged in cells in an array having a basic unit in the form of an element cell;

(c) correcting said pattern data for proximity effects resulting from exposing resins coated on the sample to the charged-particle beam or to light by;

(i) dividing an element cell into nine rectangular zones in 3×

3 matrix, and defining a second cell by putting together four different rectangular zones which are contiguous to each other and at corners of four different element cells contiguous to each other, defining third and fourth cells by putting together two different rectangular zones which are contiguous to each other and at sides of different element cells, and defining a first cell with a central rectangular zone of said element cell;

(ii) providing each of said first to fourth cells with a frame zone having a predetermined width and present outside its boundary; and

(iii) performing proximity effect correction operations, when correcting pattern data in each of said first to fourth cells for proximity effects, such that pattern data in each of said first to fourth cells are all used as a pattern to be corrected and a pattern in said frame zone present outside each of said first to fourth cells is used as a reference pattern; and

(d) writing said sample in accordance with said proximity-effect-corrected pattern.

11. A method according to claim 10 wherein when, in respect of a cell having no array structure, patterns in said cell are arranged two-dimensionally periodically, said cell is reconstructed as a set of a plurality of array element cells and thereafter proximity effect correction operations are carried out.

12. A method according to claim 10 further comprising the step of further dividing each array element cell in the cell having array structure into a plurality of sub-zones and correcting patterns in each sub-zone of said array element cell for proximity effects.

13. An apparatus for writing a pattern on a semiconductor sample based upon a resist pattern involving various design patterns by application of a charged-particle beam or light, said pattern being for use in manufacture of a semiconductor integrated circuit device having circuit portions corresponding to said pattern, said apparatus comprising:

(a) means for obtaining pattern data representing design patterns included in a pattern;

(b) means for developing said pattern data such that said design patterns are arranged in cells having a hierarchical relationship and corresponding to exposure patterns on the sample to be exposed to a charged-particle beam or light;

(c) means for correcting said pattern data for proximity effects by optimizing an amount of exposure to each of the exposure patterns when exposing resins coated on the sample to the charged-particle beam or to light, said correction means comprising;

(i) means for providing a first frame zone having a predetermined width inside a boundary of each cell;

(ii) means for providing a second frame zone having a predetermined width inside said first frame zone;

(iii) means for performing proximity effect correction operations to obtain a proximity-effect-corrected pattern such that a pattern in said second frame zone and a pattern inside said second frame zone are used as a pattern to be corrected and a pattern in said first frame zone is used as a reference pattern when correcting pattern data in said each cell for proximity effects and a pattern in said first frame zone in said each cell is added to the pattern to be corrected and a pattern in said second frame zone in said each cell is used as a reference pattern when correcting pattern data in a cell directly overlying said each cell for proximity effect; and

(iv) means for determining an amount of exposure of each pattern to the charged particle beam or to the light in accordance with a result of the proximity effect correcting operations; and

(d) means for writing said sample in accordance with said proximity-effect-corrected pattern and in accordance with said determined amount of exposure.

14. An apparatus according to claim 13 wherein in respect of a plurality of identical cells, proximity effect correction operations are carried out for one of said identical cells, and the results of the proximity effect correction operations are applied to other identical cells.

15. An apparatus according to claim 13, further comprising means for providing with a frame zone present outside its boundary and having a predetermined width, and proximity effect correction operations are performed, when correcting pattern data in said enclosed element cell for proximity effects, such that pattern data in said enclosed element cell are all used as a pattern to be corrected and pattern data in said frame zone outside said enclosed element cell is used as a reference pattern.

16. An apparatus according to claim 15 wherein the predetermined width of said frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

17. An apparatus according to claim 15 wherein when, in respect of a cell having no array structure, patterns in said cell are arranged two-dimensionally periodically, said cell is reconstructed as a set of a plurality of array element cells and thereafter proximity effect correction operations are carried out.

18. An apparatus according to claim 15 further comprising the step of further dividing each array element cell in the cell having array structure into a plurality of sub-zones and correcting patterns in each sub-zone of said array element cell for proximity effects.

19. An apparatus according to claim 13 wherein in respect of a cell having a predetermined size, proximity effect correction operations are carried out for all patterns excepting those in the first frame zone inside the boundary of said cell such that a zone inside said first frame zone is divided into a plurality of sub-zones, each sub-zone is provided with a third frame zone present outside its boundary and having a predetermined width, pattern data in said each sub-zone are all used as a pattern to be corrected and a pattern in said third frame zone is used as a reference pattern.

20. An apparatus according to claim 19 wherein the predetermined width of said third frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

21. An apparatus according to claim 13 wherein the predetermined width of each of said first and second frame zones is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

22. An apparatus for writing a pattern on a semiconductor sample based upon a resist pattern involving various design patterns by application of a charged-particle beam or light, said pattern being for use in manufacture of a semiconductor integrated circuit device having circuit portions corresponding to said pattern, said apparatus comprising:

(a) means for obtaining pattern data representing design patterns included in a pattern;

(b) means for developing said pattern data such that said design patterns are arranged in cells in an array having a basic unit in the form of an element cell;

(c) correction means for correcting said pattern data for proximity effects by optimizing an amount of exposure to each of the exposure patterns when exposing resins coated on the sample to the charged-particle beam or to light, said correction means comprising;

(i) means for dividing an element cell into nine rectangular zones in 3×

3 matrix, and defining a second cell by putting together four different rectangular zones which are contiguous to each other and at corners of four different element cells contiguous to each other, defining third and fourth cells by putting together two different rectangular zones which are contiguous to each other and at sides of different element cells, and defining a first cell with a central rectangular zone of said element cell;

(ii) means for providing each of said first to fourth cells with a frame zone having a predetermined width and present outside its boundary;

(iii) means for performing proximity effect correction operations are carried out, when correcting pattern data in each of said first to fourth cells for proximity effects, such that pattern data in each of said first to fourth cells are all used as a pattern to be corrected and a pattern in said frame zone present outside each of said first to fourth cells is used as a reference pattern, and

(iv) means for determining the amount of exposure of each pattern to the charged particle beam or to light in accordance with a result of the proximity effect correction operations; and

(d) means for writing said sample in accordance with said proximity-effect-corrected pattern and in accordance with said determined amount of exposure.

23. An apparatus according to claim 22 wherein when, in respect of a cell having no array structure, patterns in said cell are arranged two-dimensionally periodically, said cell is reconstructed as a set of a plurality of array element cells and thereafter proximity effect correction operations are carried out.

24. An apparatus according to claim 22 further comprising the step of further dividing each array element cell in the cell having array structure into a plurality of sub-zones and correcting patterns in each sub-zone of said array element cell for proximity effects.