Control of backgate bias for low power high speed CMOS/SOI devices

• US 5,185,535 A
• Filed: 06/17/1991
• Issued: 02/09/1993
• Est. Priority Date: 06/17/1991
• Status: Expired due to Fees

• Current Assignee: Hughes Aircraft Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Li, Mei, Chang, Chen-Chi P., Chin, Maw-Rong, Farb, Joseph E.
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US07/716,151
• Time in Patent Office: 603 Days
• Field of Search: 357/23.7, 357/4, 357/42, 437/21, 437/34, 437/40, 437/84
• US Class Current: 257/351
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: Y10S 257/901 MOSFET substrate bias

Abstract

Complimentary metal oxide silicon transistors fabricated on silicon-on-insulator substrates are configured to allow separately controllable and independent backgate bias for adjacent complimentary devices on the same substrate. By means of deep implantation of boron, a backgate bias P- well (26,126) is positioned on the N-substrate (17,117) at a front surface of the N- substrate behind the N channel transistor of a complimentary pair. The backgate bias P- well (26,126) is provided with an electrical contact (48,148) at the front of the device, as is the N- silicon substrate to enable independent application of separate bias voltage of different polarities and appropriate magnitude.

Claims

1. A silicon-on-insulator device comprising:

a semiconductor substrate having an oxide insulator layer,

complementary opposite polarity type P channel and N channel transistors on a front side of said oxide layer,

a backgate bias region extending in said substrate along said transistor of said first polarity type, said backgate bias region having a polarity opposite said first polarity and opposite the polarity of said semiconductor substrate, and said backgate bias region having a depth that varies according to the thickness of the overlying layers of said transistor, and

contact means on said backgate bias region for providing backgate bias to said first transistor.

2. The device of claim 1 wherein said backgate bias region extends between said transistor of said first polarity and said semiconductor substrate.

3. The device of claim 1 wherein said semiconductor substrate is of an N-polarity type, wherein said transistor of first polarity type is an N-channel transistor, and wherein said backgate bias region is of a P-polarity type extending along and adjacent said N channel transistor.

4. The device of claim 3 including an electrical contact on said backgate bias region for applying a negative backgate bias to said N-channel transistor.

5. The device of claim 4 including an electrical backgate bias contact on said semiconductor substrate for applying a positive backgate bias voltage to said P channel transistor.

6. A silicon-on-insulator device comprising:

a semiconductor substrate of a first polarity type having an oxide layer,

first and second transistors on said oxide layer, said first and second transistors being of opposite polarity type,

a backgate bias region formed on said semiconductor substrate adjacent the transistor of said first polarity type (N channel), said backgate bias region being of a plurality type opposite the polarity type of said semiconductor substrate, said backgate bias region having a depth that varies according to the thickness of the overlying layers of said first transistors, and

backgate voltage bias means connected to said backgate voltage bias region for providing a backgate bias voltage to said backgate voltage region.

7. The device of claim 6 wherein said transistor of first polarity type is an N-channel transistor, wherein said substrate comprises an N-type silicon, and wherein said backgate bias region comprises a P-type region formed in a forward surface of said silicon substrate adjacent said N-channel Transistor.

8. The device of claim 6 wherein said fist transistor comprises an N-channel transistor extending along a first active region of said device, said second transistor comprising a P channel transistor extending along a second active region of said device, and wherein said backgate bias region comprises an area of said silicon substrate extending along said first active region and being implanted to provide a P-area.

9. A method of forming a complementary metal oxide semiconductor device comprising:

forming a multi-layered structure having a silicon substrate and an upper silicon layer separated by a silicon oxide layer,

forming separate P-and N-active areas in said silicon layer on said silicon oxide layer,

forming a backgate bias contact recess area through said silicon and oxide layers to said silicon substrate,

processing a portion of said silicon substrate extending along said P-area adjacent said silicon layer to form a backgate bias region, wherein said backgate bias region has a depth that varies according to the thickness of the overlying layers of said recess area and said P-active area,

forming P-channel and N-channel transistors on said silicon oxide layer in said first and second active areas, said transistors having drain and source regions,

forming electrical contacts to the drains and sources of said transistors, and

forming an electrical contact to said backgate bias region of said silicon substrate.

10. The method of claim 9 including the step of forming an electrical connection with the said silicon substrate for providing backgate bias independent of said backgate bias region.

11. The method of claim 9 wherein said step of processing to form a backgate bias region in said silicon substrate comprises implanting boron ions into an upper portion of said silicon substrate by use of a power sufficient to implant the boron ions through said P-active area and through said silicon dioxide area into the silicon substrate.

13. The device of claim 11 including bias contact means connected to said backgate bias region and said substrate at the side thereof adjacent said oxide layer.

12. A semiconductor device comprising:

a substrate having an oxide layer,

complementary transistors on said oxide layer, said transistors each including a source and drain on one side of the oxide layer and gate between the source and drain with a depletion region formed between the gate and the oxide and between the source and drain,

a backgate bias region of the same polarity as the depletion layer, said backgate bias region being formed on said substrate adjacent said oxide layer and extending along the source, drain and depletion layer of one of said transistors, said substrate being of polarity opposite the polarity of said backgate bias region, said backgate bias region having a depth that varies according to the thickness of the overlying layers of said transistor.