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Light emitting diode device and method for producing same

  • US 5,187,547 A
  • Filed: 11/19/1990
  • Issued: 02/16/1993
  • Est. Priority Date: 05/18/1988
  • Status: Expired due to Fees
First Claim
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1. A light emitting diode device comprising:

  • a light emitting diode element and a stem supporting said diode element, said diode element includingan n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, the n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined from the crystallographic plane,an n-type silicon carbide layer grown on said first major surface,a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, anda second ohmic electrode formed on at least a portion of said second major surface,said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

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