Light emitting diode device and method for producing same

• US 5,187,547 A
• Filed: 11/19/1990
• Issued: 02/16/1993
• Est. Priority Date: 05/18/1988
• Status: Expired due to Fees

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Ohta, Kiyoshi, Uetani, Takahiro, Niina, Tatsuhiko, Nakata, Toshitake, Fujikawa, Yoshiharu, Matsushita, Yasuhiko
• Primary Examiner(s): Jackson, Sr., Jerome
• Assistant Examiner(s): MONIN, DONALD L JR
• Application Number:
  US07/616,768
• Time in Patent Office: 820 Days
• Field of Search: 357/17, 357/60, 357/56, 357/61, 357/74, 437/905, 437/906, 148/DIG. 148
• US Class Current: 257/77
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/0054 for devices with an active region comprising only group IV elements
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/343 characterised by the doping materials
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3° from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

Claims

1. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, the n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined from the crystallographic plane,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and

a second ohmic electrode formed on at least a portion of said second major surface,

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

2. The device according to claim 1, wherein said first major surface is inclined from the crystallographic plane on which the carbon atomic plane appears.

3. The device according to claim 1, wherein said n-type substrate has a specific resistance of not more than 1.0 Ω

cm and said second ohmic electrode is located in the vicinity of the edge of the said second major surface.

4. The device according to claim 1, wherein said stem has a reflective portion.

5. The device according to claim 1, wherein said first major surface is inclined of at least 3°

from said carbon atomic plane.

6. The device according to claim 1, wherein said second ohmic electrode is narrower than said first ohmic electrode so as to block less light than does said first ohmic electrode.

7. The device according to claim 1, wherein said n-type silicon carbide substrate has a light transmissibility which is greater than that of said p-type silicon carbide layer.

8. The device according to claim 1, wherein said first ohmic electrode is closer to said stem than is said second ohmic electrode.

9. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, the n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined at an angle of at least 3°

from the crystallographic plane,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on a portion of said p-type silicon carbide layer, and

a second ohmic electrode formed on a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

10. The device according to claim 9, wherein said second ohmic electrode is narrower than said first ohmic electrode so as to block less light than does said first ohmic electrode.

11. The device according to claim 9, wherein said n-type silicon carbide substrate has a light transmissibility which is greater than that of said p-type silicon carbide layer.

12. The device according to claim 9, wherein said p-type silicon carbide layer is broader than is said second major surface.

13. The device according to claim 9, wherein said first major surface is inclined toward a <

1130>

direction from said crystallographic plane.

14. The device according to claim 9, wherein said first major surface is inclined toward a <

1010>

direction from said crystallographic plane.

15. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having first and second major surface opposite to each other;

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and

a second ohmic electrode formed on at least a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

16. The device according to claim 15, wherein said p-type silicon carbide layer is broader than is said second major surface.

17. The device according to claim 15, wherein said second ohmic electrode is narrower than said first ohmic electrode so as to block less light than does said first ohmic electrode.

18. The device according to claim 15, wherein said n-type silicon carbide substrate has a light transmissibility which is greater than that of said p-type silicon carbide layer.

19. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type silicon carbide substrate having first and second major surfaces opposite each other, at least said first major surface being inclined from said crystallographic plane,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and

a second ohmic electrode having a smaller areal size than said first ohmic electrode and formed on said second major surface,

said diode element having an approximately trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, whereby a greater part of light generated in said n-type silicon carbide layer is emitted from said diode element through said n-type silicon carbide substrate than through said p-type silicon carbide layer, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

20. The device according to claim 19, wherein at least said first major surface is inclined at least 3°

from the crystallographic plane.

21. The device according to claim 19, wherein at least said first major surface is inclined from the crystallographic plane on which the carbon atomic plane appears.

22. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined from a {0001} crystallographic plane,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and

a second ohmic electrode formed on at least a portion of said second major surface,

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

23. A light emitting diode element comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined at an angle of at least 3°

from a {0001} crystallographic plane,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,

a first ohmic electrode formed on a portion of said p-type silicon carbide layer, and

a second ohmic electrode formed on a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

24. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including

an n-type silicon carbide substrate having first and second major surfaces opposite each other, at least said first major surface being inclined from a crystallographic plane of {0001} plane of the substrate,

an n-type silicon carbide layer grown on said first major surface,

a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and

a second ohmic electrode having a smaller areal size than said first ohmic electrode and formed on said second major surface,

said diode element having an approximately trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, whereby a greater part of light generated in said n-type silicon carbide layer is emitted from said diode element through said n-type silicon carbide substrate than through said p-type silicon carbide layer, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

25. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including;

an n-type SiC substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <

1010>

from said crystallographic plane,

an n-type SiC layer formed on said first major surface,

a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type SiC layer,

a second ohmic electrode formed on at least a portion of said second major surface, and

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

26. The device according to claim 25, wherein at least said first major surface is inclined at least 3°

from the crystallographic plane.

27. The device according to claim 25, wherein said first ohmic electrode is larger in area than said second ohmic electrode.

28. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including;

an n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <

1010>

from a {0001} crystallographic plane,

an n-type SiC layer formed on said first major surface,

a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type SiC layer,

a second ohmic electrode formed on at least a portion of said second major surface, and

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

29. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including;

an n-type SiC substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <

1120>

from said crystallographic plane,

an n-type SiC layer formed on said first major surface,

a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type SiC layer,

a second ohmic electrode formed on at least a portion of said second major surface, and

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

30. The device according to claim 29, wherein at least said first major surface is inclined at least 3°

from the crystallographic plane.

31. The device according to claim 29, wherein said first ohmic electrode is larger in area than said second ohmic electrode.

32. A light emitting diode device comprising:

a light emitting diode element and a stem supporting said diode element, said diode element including;

an n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <

1120>

from a {0001} crystallographic plane,

an n-type SiC layer formed on said first major surface,

a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,

a first ohmic electrode formed on at least a portion of said p-type SiC layer,

a second ohmic electrode formed on at least a portion of said second major surface, and

said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

33. A light emitting diode device, comprising:

a silicon carbide substrate of a first conductivity type, the substrate having first and second major surfaces opposite each other;

a first silicon carbide layer of the first conductivity type, the layer being grown on the first major surface;

a second silicon carbide layer of a second conductivity type which differs from that of the first conductivity type, the second silicon carbide layer being grown on the first silicon carbide layer, the substrate being thicker than the second silicon carbide layer;

a first ohmic electrode formed on at least a portion of the second silicon carbide layer;

a second ohmic electrode formed on at least a portion of said second major surface; and

supporting means for supporting said silicon carbide substrate, said first and second carbide layers, and said first and second ohmic electrodes, said supporting means including a stem, said first and second silicon carbide layers forming a junction therebetween which is closer to said stem than is said silicon carbide substrate, the silicon carbide substrate being thicker than the second silicon carbide layer, said first silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said first silicon carbide layer free of obstruction caused by said first ohmic electrode.

34. A device as in claim 33, wherein the second silicon carbide layer is broader than the second major surface.