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Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals

  • US 5,188,280 A
  • Filed: 12/23/1991
  • Issued: 02/23/1993
  • Est. Priority Date: 04/28/1989
  • Status: Expired due to Term
First Claim
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1. A method of bonding a set of members which comprises the steps of:

  • irradiating respective bonding surfaces of a pair of members with an atomic beam;

    transferring said members into an inert gas atmosphere; and

    pressing said bonding surfaces of said members against each other in the inert gas atmosphere.

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