Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals

• US 5,188,280 A
• Filed: 12/23/1991
• Issued: 02/23/1993
• Est. Priority Date: 04/28/1989
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd., Hitachi Vlsi Engineering Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd., Hitachi Vlsi Engineering Corporation (Hitachi, Ltd.)
• Inventors: Horino, Masaya, Irie, Shouichi, Akasaki, Hiroshi, Emoto, Yoshiaki, Iketani, Masayuki, Sahara, Kunizo, Sekiguchi, Koichiro, Otsuka, Kanji, Nakao, Takashi, Yoshida, Ikuo, Kamohara, Hideaki, Kohno, Akiomi
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US07/812,024
• Time in Patent Office: 428 Days
• Field of Search: 228/180.2, 228/221, 228/123-124, 228/205, 228/116, 228/219
• US Class Current: 228/123.1
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 2224/11003 for holding or transferring the bump preform
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/136 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/81012 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/055 the leads having a passage through the base H01L23/057 takes precedence
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/166 : Material
• CPC Class Codes: H05K 2203/0113 : Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
• CPC Class Codes: H05K 2203/016 : Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
• CPC Class Codes: H05K 2203/0338 : Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component
• CPC Class Codes: H05K 2203/041 : Solder preforms in the shape of solder balls
• CPC Class Codes: H05K 3/3478 : Applying solder preforms; Transferring prefabricated solder patterns
• CPC Class Codes: H05K 3/3489 : Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces

Abstract

A technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, more particularly pertains to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam, and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.

Claims

1. A method of bonding a set of members which comprises the steps of:

irradiating respective bonding surfaces of a pair of members with an atomic beam;

transferring said members into an inert gas atmosphere; and

pressing said bonding surfaces of said members against each other in the inert gas atmosphere.

2. A method of bonding a set of members which comprises the steps of:

irradiating respective bonding surfaces of a pair of members with an atomic beam; and

pressing said bonding surfaces of said members against each other in the presence of normal atmospheric pressure.

3. A method of bonding a set of metal members which comprises the steps of:

irradiating respective bonding surfaces of the set of metal members disposed in a vacuum vessel with a particle energy beam to clean contaminants from the bonding surfaces by sputtering;

thereafter transferring the metal members into another vessel continuous with the vacuum vessel, the another vessel provided therein with an inert gas atmosphere to prevent reformation of contaminants; and

thereafter pressing the bonding surfaces of the metal members against each other in the another vessel provided therein with the inert gas atmosphere for bonding the set of metal members.

4. A method of bonding a set of metal members according to claim 3, further comprising:

heating the metal members to a temperature not higher than the melting temperatures of the metal members during said step of pressing.

5. A method of bonding a set of metal members according to claim 3,

wherein at least one of the metal members comprises a non-eutectic alloy;

and

further comprising before said step of irradiating, melting the non-eutectic alloy and rapidly cooling the melted non-eutectic alloy to cause segregation of a eutectic alloy layer to the bonding surface of the non-eutectic alloy, with the eutectic alloy having a lower melting temperature than the melting temperature of the non-eutectic alloy; and

heating the metal members to a temperature at about the melting temperature of the eutectic alloy layer and lower than the melting temperature of the non-eutectic alloy layer during said step of pressing.

6. A method of bonding a set of metal members according to claim 5, wherein the non-eutectic alloy is a solder and said step of pressing temporarily bonds the eutectic alloy layer of the at least one of the metal members to the other of the metal members while deforming the non-eutectic alloy.

7. A method of bonding a set of metal members according to claim 6, further including thereafter transferring the metal members that are temporarily bonded together to a fusion apparatus;

and

thereafter heating the metal members to a temperature of about the melting temperature of the non-eutectic alloy while pressing the metal members together to permanently bond them.

8. A method of bonding a set of metal members according to claim 7, wherein said second mentioned step of pressing for permanently bonding diffuses the eutectic layer into the non-eutectic alloy.

9. A method of bonding a set of metal members according to claim 8, wherein said irradiating is conducted with a particle energy beam that is an electrically neutral atomic energy beam.

10. A method of bonding a set of metal members according to claim 9, wherein said step of transferring is conducted with a load-lock chamber.

11. A method of bonding a set of metal members according to claim 9, wherein all of said steps are conducted without the use of flux for fluxless solder bonding.

12. A method of bonding a set of metal members according to claim 8, wherein said irradiating is conducted with a particle energy beam that is an ion energy beam and with simultaneously showering the ion energy beam with oppositely-charged ions to neutralize the charges of the ions of the ion energy beam to prevent charge-up on the irradiated bonding surfaces.

13. A method of bonding a set of metal members according to claim 12, wherein all of said steps are conducted without the use of flux for fluxless solder bonding.

14. A method of bonding a set of metal members according to claim 3, wherein said irradiating is conducted with a particle energy beam that is an electrically neutral atomic energy beam.

15. A method of bonding a set of metal members according to claim 3, wherein said irradiating is conducted with a particle energy beam that is an ion energy beam and with simultaneously showering the ion energy beam with oppositely-charged ions to neutralize the charges of the ions of the ion energy beam to prevent charge-up on the irradiated bonding surfaces.

16. A method of bonding a set of metal members according to claim 3, wherein all of said steps are conducted without the use of flux for fluxless solder bonding.

17. A method of bonding a set of metal members according to claim 3, wherein said step of transferring is conducted with a load-lock chamber.

18. A method of bonding a set of metal members according to claim 3, wherein said step of pressing is conducted while the inert gas atmosphere is at about 1 atmosphere pressure.

19. A method of bonding a set of metal members according to claim 18, wherein all of said steps are conducted without the use of flux for fluxless solder bonding;

said step of transferring is conducted with a load-lock chamber.

20. A method of bonding a set of metal members according to claim 19, further comprising:

heating the metal members to a temperature not higher than the melting temperatures of the metal members during said step of pressing.

21. A method of bonding a set of metal members according to claim 3, wherein the metal members are respectively components of an integrated circuit with at least one of the components having solder bumps forming the bonding surfaces for one of the metal members;

and

including inverting at least one of the metal members between said steps of irradiating and pressing so that said method is a part of flip-chip soldering.

22. A method of bonding a set of metal members according to claim 21, wherein all of said steps are conducted without the use of flux for fluxless solder bonding;

said step of transferring is conducted with a load-lock chamber.

23. A method of bonding a set of metal members according to claim 22, further comprising:

heating the metal members to a temperature not higher than the melting temperatures of the metal members during said step of pressing;

said step of pressing is conducted while the inert gas atmosphere is at about 1 atmosphere pressure.

24. A method of bonding a set of metal members according to claim 3, further including a step of handling at least one of the metal members with a vacuum powered handler within the inert gas atmosphere of the another vessel.

25. A method of bonding a set of metal members according to claim 3, wherein said vacuum vessel is substantially smaller than said another vessel;

and

further including the step of manipulating at least one of the metal members with handling equipment contained in the another vessel.

26. A method of bonding a set of metal members according to claim 25, wherein said manipulating includes vacuum gripping the at least one of said metal members with a vacuum chuck as a part of the handling apparatus in the another vessel.

27. A method of bonding a set of metal members according to claim 26, wherein said step of transferring is conducted with a load-lock chamber.

28. A method of bonding a set of metal members according to claim 27, wherein said step of pressing is conducted while the inert gas atmosphere is at about 1 atmosphere pressure.

29. A method of bonding a set of metal members according to claim 26, wherein said manipulating includes inverting through 180°

the at least one of the metal members from its position during said step of irradiating to an inverted position in the another vessel and wherein said step of pressing presses the at least one of the metal members in its inverted position.

30. A fluxless method of bonding two bonding surfaces of components of an electronic integrated circuit, comprising the steps of:

forming a plurality of non-eutectic alloy solder bumps on one of the components, with the solder bumps forming the bonding surfaces of the one of the components;

said forming including melting the solder bumps and cooling the melted solder bumps sufficiently to segregate a eutectic alloy layer on the bonding surface of each of the non-eutectic alloy solder bumps;

pressing the components together so that the eutectic alloy layer of each of the solder bumps is temporarily bonded to the respective bonding surface of the other component while heating the bonding surfaces to a temperature at about the melting point of the eutectic alloy layer and lower than the melting point of the non-eutectic alloy layer.

31. A method of bonding a set of metal members according to claim 30, wherein said pressing includes deforming the non-eutectic alloy to completely contact the bonding surfaces;

thereafter transferring the temporarily bonded components to a fusion apparatus; and

thereafter pressing the components together at a temperature at about the melting temperature of the non-eutectic alloy for permanently bonding the components together and diffusing the eutectic alloy into the non-eutectic alloy.