Method of manufacturing SOI semiconductor element
First Claim
1. A method of manufacturing an SOI semiconductor element, comprising the steps of:
- preparing a structure obtained by forming a first semiconductor layer on a first insulator;
arranging a process mask on said first semiconductor layer, said process mask having a groove pattern of a predetermined size;
forming a groove extending between said first semiconductor layer and said first insulator layer by etching said first semiconductor layer on the basis of the groove pattern of said process mask to expose said first insulator layer and etching said first insulator layer to a predetermined depth;
forming a second semiconductor layer serving as a buried electrode in said groove such that a level of an upper surface of said second semiconductor layer is equal to a level of a bottom surface of said first semiconductor layer;
forming a second insulator layer on said second semiconductor layer;
performing crystalline growth of a semiconductor layer from side surfaces of said groove to bury the groove with a monocrystalline semiconductor;
forming a source region and a drain region in said monocrystalline semiconductor buried in said groove; and
forming a gate electrode on said monocrystalline semiconductor through a gate oxide film.
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Accused Products
Abstract
According to a method of manufacturing an SOI semiconductor element of this invention, a structure obtained by forming a first semiconductor layer on a first insulator is prepared. A process mask is arranged on the first semiconductor layer. The process mask has a groove pattern of a predetermined size. A groove extending between the first semiconductor layer and the first insulator layer is formed by etching the first semiconductor layer on the basis of the groove pattern of the process mask to expose the first insulator layer and etching the first insulator layer to a predetermined depth. A second semiconductor layer serving as a buried electrode is formed in the groove such that a level of an upper surface of the second semiconductor layer is equal to a level of a bottom surface of the first semiconductor layer. A second insulator layer is formed on the second semiconductor layer. Crystalline growth of a semiconductor layer is performed from side surfaces of the groove to bury the groove with a monocrystalline semiconductor. A source region and a drain region are formed in the monocrystalline semiconductor buried in the groove. A gate electrode is formed on the monocrystalline semiconductor through a gate oxide film.
126 Citations
10 Claims
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1. A method of manufacturing an SOI semiconductor element, comprising the steps of:
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preparing a structure obtained by forming a first semiconductor layer on a first insulator; arranging a process mask on said first semiconductor layer, said process mask having a groove pattern of a predetermined size; forming a groove extending between said first semiconductor layer and said first insulator layer by etching said first semiconductor layer on the basis of the groove pattern of said process mask to expose said first insulator layer and etching said first insulator layer to a predetermined depth; forming a second semiconductor layer serving as a buried electrode in said groove such that a level of an upper surface of said second semiconductor layer is equal to a level of a bottom surface of said first semiconductor layer; forming a second insulator layer on said second semiconductor layer; performing crystalline growth of a semiconductor layer from side surfaces of said groove to bury the groove with a monocrystalline semiconductor; forming a source region and a drain region in said monocrystalline semiconductor buried in said groove; and forming a gate electrode on said monocrystalline semiconductor through a gate oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification