Integrated distributed resistive-capacitive network
First Claim
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1. An integrated-distributed-resistive-capacitive network, comprising:
- a high dielectric electronically-tunable Zirconium Titanate integrated capacitor, comprising;
a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor;
a depletion layer formed in the high resistivity layer;
an insulating layer of Zirconium Titanate formed on the high resistivity layer;
a conductive electrode formed on the dielectric layer;
a resistive layer formed on the high dielectric semiconductor integrated capacitor; and
a plurality of electrical contact terminals coupled to the resistive layer.
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Abstract
An integrated-distributed-resistive-capacitive network (100) having a high dielectric electronically-tunable semiconductor integrated capacitor. The network (100) also includes a resistive layer (126) formed on the high dielectric semiconductor integrated capacitor, to provide the distributed resistance of the network (100). External contact to the resistive portion of the network (100) is provided via a plurality of contact terminals (122A and 122B) which are coupled to the resistive layer (126).
19 Citations
4 Claims
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1. An integrated-distributed-resistive-capacitive network, comprising:
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a high dielectric electronically-tunable Zirconium Titanate integrated capacitor, comprising; a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer of Zirconium Titanate formed on the high resistivity layer; a conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
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2. An integrated-distributed-resistive-capacitive network, comprising:
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a high dielectric electronically-tunable semiconductor integrated capacitor, comprising; a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, the insulating layer having a dielectric constant greater than 16; an conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
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3. An integrated distributed resistive-capacitive network having a control input, a common line and two signal lines, comprising:
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a Zirconium Titanate integrated capacitor;
having a control-line plate coupled to the control input and a first contact plate coupled to the common line;a resistive layer formed over the integrated capacitor; and a plurality of contact terminals coupled to the resistive layer and providing the two signal lines.
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4. A communication device, comprising:
receiver means for receiving radio communication signals, the means for receiving having at least one integrated electronically tunable distributed resistive-capacitive network, the integrated network including; a Zirconium Titanate integrated capacitor; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of contact terminals coupled to the resistive layer.
Specification
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Current AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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Original AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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InventorsOoi, Leng H.
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Primary Examiner(s)Griffin, Donald
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Application NumberUS07/787,278Time in Patent Office477 DaysField of Search361/311, 361/312, 361/313, 357/14, 357/20, 357/51, 29/25.42, 333/72, 333/174US Class Current455/195.1CPC Class CodesH01L 27/0688 Integrated circuits having ...H01L 29/94 Metal-insulator-semiconduct...H03H 1/02 of RC networks, e.g. integr...
