Ceramic electrostatic chuck

• US 5,191,506 A
• Filed: 05/02/1991
• Issued: 03/02/1993
• Est. Priority Date: 05/02/1991
• Status: Expired due to Term

• Current Assignee: Dorsey GAGE Company Incorporated
• Original Assignee: International Business Machines Corporation
• Inventors: Westerfield, Robert P. Jr., Tompkins, Robert E., Logan, Joseph S., Ruckel, Raymond R.
• Primary Examiner(s): Gaffin, Jeffrey A.
• Application Number:
  US07/694,699
• Time in Patent Office: 670 Days
• Field of Search: 361/230, 361/233, 361/234, 269/8, 269/903, 279/1 M, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10S 269/903 Work holder for electrical circuit assemblages or wiring systems
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

An electrostatic chuck 8 assembly includes, from top to bottom: a top multilayer ceramic insulating layer 10; an electrostatic pattern layer 12 having a conductive electrostatic pattern 16 disposed on a multilayer ceramic substrate; a multilayer ceramic support layer 20; and, a heat sink base 30 having a backside cooling channels machined therein. Layers 12, 12 and 20 are bonded together using multilayer ceramic techniques and the heatsink base 30 is brazed to the bottom of the multilayer ceramic support layer 20.

Claims

1. An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom:

an electrically insulative, thermally conductive isolation layer;

a multilayer ceramic electrostatic pattern layer having an electrically conductive pattern disposed thereon for generating an electrostatic force and having first electrically conductive vias disposed therethrough for conducting electrical energy to said conductive pattern;

a multilayer ceramic support having second electrically conductive vias disposed therethrough for conducting electrical energy to said first vias; and

,

a heat sink base having access holes provided therethrough for providing access to said second vias.

2. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base further comprises cooling channels for circulating a coolant.

3. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of multilayer ceramic.

4. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of polyimide.

5. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of alumina.

6. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of quartz.

7. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of diamond.

8. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said electrically conductive pattern is comprised of a plurality of alternating conductive strips, each said conductive strip being electrically energized with an opposite DC potential of that of adjacent strips.

9. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said electrically conductive pattern is comprised of molybdenum.

10. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer, electrostatic layer and support are bonded together by compression and heat.

11. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said support and said heat sink base are brazed together.

12. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base is comprised of an iron/nickel/cobalt alloy.

13. An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base is comprised of an iron/nickel/cobalt alloy (29Ni/17Co/53Fe).

14. An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom:

a multilayer ceramic isolation layer;

a multilayer ceramic electrostatic layer having an electrically conductive pattern disposed thereon for generating an electrostatic force and conductive vias disposed therethrough for conducting electrical energy to said electrically conductive pattern; and

,

a heat sink base for supporting and cooling said isolation and electrostatic layers having access holes disposed therethrough for providing access to said conductive vias.

15. An electrostatic chuck for clamping a semiconductor wafer according to claim 14, wherein said heat sink base is comprised of an iron/nickel/cobalt alloy.

16. An electrostatic chuck for clamping a semiconductor wafer according to claim 14, wherein said heat sink base is further comprised of cooling channels disposed therein for circulating a coolant.

17. An electrostatic chuck for clamping a semiconductor wafer according to claim 14, wherein said isolation layer and said electrostatic layer are bonded together with heat and pressure.

18. An electrostatic chuck for clamping a semiconductor wafer according to claim 14, wherein said electrostatic layer is brazed to said heat sink base.

19. An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom:

a multilayer ceramic isolation layer;

a multilayer ceramic electrostatic pattern layer having;

an electrically conductive pattern disposed thereon for generating an electrostatic force and comprised of a plurality of alternating conductive strips, each said conductive strip being electrically energized with an opposite DC potential of that of adjacent strips; and

, first electrically conductive vias disposed therethrough for conducting electrical energy to said conductive pattern;

a multilayer ceramic support having second electrically conductive vias disposed therethrough for conducting electrical energy to said first vias; and

,

a heat sink base comprised of an iron/nickel/cobalt alloy and having;

access holes provided therethrough for providing access to said second vias; and

, cooling channels disposed therein for circulating a coolant,

wherein said isolation layer, electrostatic layer and support are bonded together by compression and heat and said support and said heat sink base are brazed together.

20. An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom:

a multilayer ceramic isolation layer;

a multilayer ceramic electrostatic pattern layer having;

an electrically conductive pattern disposed thereon for generating an electrostatic force and comprised of a plurality of alternating conductive strips, each said conductive strip being electrically energized with an opposite DC potential of that of adjacent strips; and

, first electrically conductive vias disposed therethrough for conducting electrical energy to said conductive pattern; and

,

a heat sink base comprised of an iron/nickel/cobalt alloy and having;

access holes provided therethrough for providing access to said first vias; and

, cooling channels disposed therein for circulating a coolant,

wherein said isolation layer and electrostatic layer are bonded together by compression and heat and said electrostatic layer and said heat sink base are brazed together.