Method of making field effect transistor

• US 5,192,700 A
• Filed: 01/30/1992
• Issued: 03/09/1993
• Est. Priority Date: 12/28/1987
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Shimura, Teruyuki
• Primary Examiner(s): Thomas, Tom
• Application Number:
  US07/828,374
• Time in Patent Office: 404 Days
• Field of Search: 437/26, 437/29, 437/39, 437/40, 437/41, 437/126, 437/176, 437/22, 148/DIG. 84
• US Class Current: 438/174
• CPC Class Codes: H01L 21/7605 between components manufactured in an active substrate comprising AIII BV compounds
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/66924 with an active layer made of a group 13/15 material H01L29/66446 takes precedence
• CPC Class Codes: H01L 29/802 with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors H01L29/806 takes precedence; with one dimensional electron gas H01L29/775; with dimensional electron gas H01L29/778
• CPC Class Codes: H01L 29/808 with a PN junction gate , e.g. PN homojunction gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence

Abstract

A field effect transistor including a semi-insulating semiconductor substrate, a first conductivity type semiconductor layer disposed on the substrate and forming a heterojunction with the substrate, second conductivity type spaced apart source and drain regions extending through the layer into the substrate, a metallic gate disposed on the layer between the source and drain regions, and a second conductivity type channel disposed in the substrate extending between the source and drain regions and forming a pn heterojunction with the layer for reducing leakage current from the channel to the gate. The second conductivity type channel is produced by ion implantation, and the implantation conditions are controlled as a mechanism for controllably establishing a threshold voltage for the field effect transistor.

Claims

1. A method of making a field effect transistor including:

depositing on a semi-insulating substrate a semiconductor layer of a first conductivity type;

forming a channel of a second conductivity type opposite from said first conductivity type in said substrate, thereby forming a pn junction with said layer;

disposing a metallic gate electrode on said layer opposite said channel; and

forming spaced apart source and drain regions of said second conductivity type in said layer, extending into said substrate, and contacting said channel, said source and drain regions lying on opposite sides of said gate electrode.

2. The method of claim 1 wherein said substrate has a first energy band gap, said layer has a second energy band gap, and said second energy band gap is larger than said first energy band gap.

3. The method of claim 1 wherein said substrate is GaAs and includes depositing said layer by epitaxially growing AlGaAs on said substrate.

4. The method of claim 1 including forming said channel and said source and drain regions by ion implantation.

5. The method of claim 4 including implanting ions to form said channel without changing the conductivity type of said layer.

6. The method of claim 4 including controlling the ion implantation conditions to establish a threshold voltage for the field effect transistor.

7. The method of claim 5 including controlling the conditions for implanting said ions to establish a threshold voltage for the field effect transistor.

8. The method of claim 1 including forming at least one isolation region extending through said layer and into said substrate for isolating said transistor electrically from portions of said layer lying beyond said isolation region.

9. The method of claim 1 including, after depositing said layer but before forming said channel, forming in said layer and said substrate a region of said first conductivity type in which said channel and said source and drain regions are subsequently formed.