Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method

• US 5,192,717 A
• Filed: 12/02/1991
• Issued: 03/09/1993
• Est. Priority Date: 04/28/1989
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Aoki, Takeshi, Kanai, Masahiro, Kawakami, Soichiro
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): EVERHART, BYRON S
• Application Number:
  US07/799,900
• Time in Patent Office: 463 Days
• Field of Search: 437/225, 437/228, 437/233, 437/967, 427/38, 427/39, 156/643, 118/50.1, 148/DIG. 122
• US Class Current: 438/479
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: Y10S 148/122 Polycrystalline

Abstract

A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.

Claims

1. A process for forming a polycrystalline semiconductor film on an insulating substrate which comprises using a MWPCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means, and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while maintaining the inner pressure of said film-forming chamber at a vacuum of 1×

10^-4 to 5×

10^-3 Torr and applying a high frequency voltage with a frequency in the range of from 20 MHz to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of polycrystalline semiconductor film on said insulating substrate maintained at a temperature in the range of from 200°

to 400°

C.

2. The process according to claim 1, wherein said high frequency voltage is of 100 to 500 V.

3. A process for forming a polycrystalline semiconductor film on an insulating substrate which comprises using a MWPCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a magnetic field effecting means, and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber while effecting a magnetic field into said plasma generation chamber by said magnetic field effecting means and introducing said plasma into said film forming chamber while maintaining the inner pressure of said film-forming chamber at a vacuum in the range of from 1×

10^-6 to 5×

10^-3 Torr and applying a high frequency voltage of a frequency in the range of from 20 MHz to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of polycrystalline semiconductor film on said insulating substrate maintained at a temperature in the range of from 200°

to 400°

C.

4. The process according to claim 3, wherein said high frequency voltage is of 100 to 500 V.