High dielectric constant capacitor and method for manufacturing the same

• US 5,195,018 A
• Filed: 06/17/1992
• Issued: 03/16/1993
• Est. Priority Date: 07/03/1991
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kwon, Keewon, Kim, Youngwug
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US07/899,973
• Time in Patent Office: 272 Days
• Field of Search: 29/25.03, 29/25.42, 361/311, 361/312, 361/313, 361/529, 357/51
• US Class Current: 361/313
• CPC Class Codes: H01G 4/20 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 H01G4/12 takes precedence
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

A high dielectric constant film comprised of at least a first dual-film layer, which includes a first tantalum oxide film, and a first metal oxide film which is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide. The first metal oxide film preferably has a thickness of less than approximately 50 angstroms, in order to thereby avoid the formation of a columnar structure, which has been identified as a principal cause of the high leakage current problem which has plagued presently available high dielectric constant capacitors. The first tantalum oxide film preferably has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms, with the ratio of the thickness of the first tantalum oxide film to the thickness of the first metal oxide film being in the range of 1:10 to 100:1. The high dielectric constant film preferably further includes a plurality of additional dual-film layers formed on the first dual-film layer, to thereby provide a multilayer high dielectric constant film. Each of the additional dual-film layers is preferably of the same construction as that of the first dual-film layer.

The present invention also encompasses a high dielectric constant capacitor which incorporates the above-described high dielectric constant film, and a method for manufacturing the same.

Claims

1. A high dielectric constant capacitor, including:

a substrate;

a first electrode film formed on said substrate;

a first tantalum oxide film formed on said first electrode film;

a first metal oxide film formed on said first tantalum oxide film, wherein said first metal oxide film is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide;

wherein said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and

a second electrode film formed on said high dielectric constant film.

2. The capacitor as set forth in claim 1, wherein said first tantalum oxide film has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.

3. The capacitor as set forth in claim 1, wherein said first metal oxide film has a thickness of less than approximately 50 angstroms.

4. The capacitor as set forth in claim 3, wherein the ratio of the thickness of said first tantalum oxide film to the thickness of said first metal oxide film is in the range of 1:

10 to 100;

1.

5. The capacitor as set forth in claim 4, wherein said metal oxide is selected from a group comprised of TiO₂, SnO₂, ZrO₂, HfO₂, WO₂, Al₂ O₃, Cr₂ O₃, Y₂ O₃, La₂ O₃, Bi₂ O₃, Th₂ O₃, PbO, BaO, SnO, SrO, CaO, MnO, and MgO.

6. The capacitor as set forth in claim 1, wherein said high dielectric constant film further includes a plurality of additional dual-film layers formed on said first dual-film layer, wherein each of said additional dual-film layers is comprised of a respective tantalum oxide film and a respective metal oxide film.

7. The capacitor as set forth in claim 6, wherein said high dielectric constant film further includes an additional single layer of tantalum oxide formed on an uppermost one of said additional dual-film layers.

8. The capacitor as set forth in claim 6, wherein said high dielectric constant film further includes an additional single layer of metal oxide formed on an uppermost one of said additional dual-film layers.

9. The capacitor as set forth in claim 6, wherein said respective metal oxide film of each said additional dual-film layer is also made of said metal oxide.

10. The capacitor as set forth in claim 9, wherein said metal oxide is selected from a group comprised of TiO₂, SnO₂, ZrO₂, HfO₂, WO₂, Al₂ O₃, Cr₂ O₃, Y₂ O₃, La₂ O₃, Bi₂ O₃, Th₂ O₃, PbO, BaO, SnO, SrO, CaO, MnO, and MgO.

11. The capacitor as set forth in claim 10, wherein the ratio of the thickness of said respective tantalum oxide film of each said additional dual-film layer to the thickness of said respective metal oxide film of each said 1:

10 to 100;

1.

12. The capacitor as set forth in claim 11, wherein said respective tantalum oxide layer of each said additional dual-film layer has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.

13. The capacitor as set forth in claim 12, wherein said respective metal oxide layer of each said additional dual-film layer has a thickness of less than approximately 50 angstroms.

14. A method for manufacturing a high dielectric constant capacitor, including the steps of:

forming a first electrode film on a substrate;

forming a first tantalum oxide film on said first electrode film;

forming a first metal oxide film on said first tantalum oxide film, said metal oxide film being formed of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide, whereby said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and

,

forming a second electrode film on said high dielectric constant film.

15. The method as set forth in claim 14, further including the steps of:

forming an additional tantalum oxide film on said first metal oxide film; and

,

forming an additional metal oxide film on said additional tantalum oxide film.

16. The method as set forth in claim 14, further including the step of sequentially repeating said forming a tantalum oxide step and said forming a metal oxide film step, a plurality of times, to thereby form a plurality, n, of dual-film layers, each comprised of a respective tantalum oxide film and a respective metal oxide film;

wherein said first tantalum oxide film and said first metal oxide film together comprise a first one of said n dual-film layers, and the last-formed tantalum oxide film and the last-formed metal oxide film together comprise an nth one of said n dual-film layers; and

,

wherein further, said n dual-film layers together comprise said high dielectric constant film.

17. The method as set forth in claim 16, wherein said tantalum oxide film of each of said n dual-film layers is formed to a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.

18. The method as set forth in claim 17, wherein said metal oxide film of each of said n dual-film layers is formed to a thickness of less than approximately 50 angstroms.

19. The method as set forth in claim 18, wherein the ratio of the thickness of said tantalum oxide film of each of said n dual-film layers to the thickness of said metal oxide film of each of said n dual-film layers, is in the range of 1:

10 to 100;

1.

20. The method as set forth in claim 19, wherein said metal oxide is selected from a group comprised of TiO₂, SnO₂, ZrO₂, HfO₂, WO₂, Al₂ O₃, Cr₂ O₃, Y₂ O₃, La₂ O₃, Bi₂ O₃, Th₂ O₃, PbO, BaO, SnO, SrO, CaO, MnO, and MgO.

21. The method as set forth in claim 20, further including the step of forming an additional said n dual-film layers.

22. The method as set forth in claim 20, further including the step of forming an additional single layer of said metal oxide on said nth one of said n dual-film layers.

23. The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are each vapor deposition process.

24. The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried out by means of a deposition process whereby the time at which deposition of said metal oxide film of each of said n dual-film layers begins, does not overlap the time at which deposition of its corresponding said tantalum oxide film ends, and vice versa.

25. The method as set forth in claim 24, wherein the starting time for deposition of said metal oxide film of each of said n dual-film layers, is substantially concurrent with the ending time for the deposition of its corresponding said tantalum oxide film, and vice versa.

26. The method as set forth in claim 24, wherein the starting time for deposition of said metal oxide film of each of said n dual-film layers, is separated by a predetermined time interval from the ending time for the deposition of its corresponding said tantalum oxide film, and vice versa.

27. The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried out by means of a deposition process whereby the time at which deposition of said metal oxide film of each of said n dual-film layers begins, partially overlaps the time at which deposition of its corresponding said tantalum oxide film ends, and vice versa.

28. The method as set forth in claim 19, where said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried during deposition of said tantalum oxide film of each of said n dual-film layers, said metal oxide is simultaneously deposited, but at a very low deposition speed, so that only minute quantities of said metal oxide are deposited during deposition of said tantalum oxide film of each of said n dual-film layers.

29. The method as set forth in claim 28, wherein, additionally, during deposition of said metal oxide film of each of said n dual-film layers, said tantalum oxide is simultaneously deposited, but at a very low deposition speed, so that only minute quantities of said tantalum oxide are deposited during deposition of said metal oxide film of each of said n dual-film layers.

30. The method as set forth in claim 19, wherein said first electrode film and said second electrode film are made of a conductive material selected from a group comprised of doped polycrystalline silicon, amorphous silicon, and tungsten.