High temperature superconductor deposition by sputtering

• US 5,196,400 A
• Filed: 08/17/1990
• Issued: 03/23/1993
• Est. Priority Date: 08/17/1990
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Chen, Chiou T., Krause, Dennis L.
• Primary Examiner(s): Nguyen, Nam X.
• Application Number:
  US07/569,047
• Time in Patent Office: 949 Days
• Field of Search: 505/1, 505/730, 505/731, 505/732, 505/816, 427/34, 427/423, 204/192.15, 204/192.24, 204/298.12, 204/298.02
• US Class Current: 505/476
• CPC Class Codes: C23C 14/087 of copper or solid solutions thereof
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H10N 60/0408 by sputtering
• CPC Class Codes: Y10S 505/731 Sputter coating

Abstract

A target which is a good conductor of heat and electricity is plasma sprayed with a weakly conducting material such as a metallic oxide. The target is then employed in a magnetron sputtering apparatus to sputter the material sprayed onto the target onto a substrate. The technique permits use of power densities and target sizes and shapes which are advantageous for sputtering substrates having large surface areas.

Claims

1. A method of employing a direct-current magnetron sputtering device to sputter a first material which has low heat and electrical conductivity at the temperatures encountered in the sputtering operation from a target to a substrate, the method comprising the steps of:

employing a second material with high heat and electrical conductivity for the target;

applying a coating of the first material to a surface of the target which is subject to ion bombardment in the sputtering device, the coating being applied by spraying a powder of the first material onto the surface and having the property that particles of the first material are tightly bound to each other and/or to the surface; and

operating the sputtering device using the target.

2. The method set forth in claim 1 wherein:

the step of operating the sputtering device using the target includes the step of cooling the target during operation.

3. The method set forth in claim 1 wherein:

the sputtered first material is electrically charged; and

the step of operating the sputtering device using the target includes the step of magnetically controlling deposition of the sputtered first material on the substrate.

4. The method set forth in claim 1, 2, or 3 wherein:

the step of operating the sputtering device using the target is performed without radio-frequency enhancement.

5. The method set forth in claim 1, 2, or 3 wherein:

the first material is a superconducting material.

6. The method set forth in claim 5 wherein:

the first material is a superconducting material of the class YBaCuO.

7. The method set forth in claim 1, 2, or 3 wherein:

the step of coating the surface is performed by spraying the particles of the first material onto the surface under temperature and velocity conditions such that the particles flow into thin lenticular shapes when they strike the target.

8. The method set forth in claim 7 wherein:

the step of spraying the particles is performed by plasma spraying the particles.

9. The method set forth in claim 1, 2, or 3 wherein:

the size and shape of the surface are limited only by the size and shape requirements of the sputtering device.

10. The method set forth in claim 1, 2, or 3 wherein:

the surface is cylindrical.