Photoelectric transducer switchable to a high-resolution or high-sensitivity mode

• US 5,196,692 A
• Filed: 01/24/1992
• Issued: 03/23/1993
• Est. Priority Date: 02/01/1991
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Arinaga, Kenji, Fujiwara, Koji, Ito, Yuichiro, Kajihara, Nobuyuki, Sudo, Gen, Hikida, Soichiro
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Lee, John R.
• Application Number:
  US07/825,497
• Time in Patent Office: 424 Days
• Field of Search: 250/208.2, 250/208.1, 250/211 J, 250/211 R, 357/30 D, 357/30 H, 357/30 P, 357/30 Q, 357/32
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/0325 characterised by the doping material

Abstract

A photoelectric transducer having a photocell includes a compound semiconductor substrate in which a photodiode is doped by an impurity of a conductivity type opposite to that of the substrate. An enclosure region is formed by the same doping impurity as the photodiode, surrounding but spaced apart from the photodiode. A gate electrode is formed on a portion of an insulation layer, the latter formed all over the substrate surface, which extends between the photodiode and the enclosure region. The enclosure region is selectively connected, via a contact hole through the insulation layer and a first switch to ground level. The gate electrode is connected via a second switch to a predetermined voltage having the same polarity as the conductivity type of the substrate. In a high-resolution mode, the first switch is closed and the second switch is open, so that the grounded enclosure region prevents carriers generated in the substrate, between the photodiode and the enclosure region, from flowing into an adjacent cell. In a high-sensitivity mode, the first switch is opened and the second switch is closed, so that the gate voltage generates a channel which electrically connects the photodiode to the enclosure region; thus, the carriers generated within the enclosure are all gathered to the photodiode. The first and second switches may be fabricated on a second semiconductor substrate, arranged parallel to but spaced from the compound semiconductor substrate and electrically connected thereto via bumps.

Claims

1. A photoelectric transducer having a photocell, comprising:

a compound semiconductor substrate of a first conductivity type and having a main surface;

a photodiode region, doped with an impurity of a second conductivity type opposite to said first conductivity type, formed on the main surface of said compound semiconductor substrate;

an enclosure region, surrounding and separated from said photodiode region and doped with an impurity of said second conductivity type, formed on said main surface of said compound semiconductor substrate;

an insulation layer formed on said main surface;

a gate electrode formed on said insulation layer and located over a portion thereof extending between said photodiode region and said enclosure region;

a first switch for applying a first predetermined voltage to said enclosure region; and

a second switch for applying a second predetermined voltage to said gate electrode, said second switch being closed when said first switch is opened and said second switch being opened when said first switch is closed.

2. A photoelectric transducer as recited in claim 1, wherein said first predetermined voltage is the voltage level of said compound semiconductor substrate.

3. A photoelectric transducer as recited in claim 1, wherein the polarity of said second predetermined voltage is identical to the polarity of said first conductivity type.

4. A photoelectric transducer as recited in claim 1, wherein the material of said compound semiconductor substrate is selected from the group consisting of PbSnTe (lead-antimony-tellurium) InSb (indium-antimony), HgCdTe (mercury-cadnium-tellurium) and HgZnTe (mercury-zinc-tellurium), and wherein the light to be detected is an infrared light.

5. A photoelectric transducer as recited in claim 1, further comprising a plurality of said photocells formed on a common, said compound semiconductor substrate.

6. A photoelectric transducer as recited in claim 5, wherein said photocells are linearly arranged.

7. A photoelectric transducer as recited in claim 5, wherein said photocells are two-dimensionally arranged.

8. A photoelectric transducer as recited in claim 1, further comprising a second semiconductor substrate having a main surface and which carries said first and second switches and a circuit which processes a signal detected by said photocell, said second semiconductor substrate being arranged with the main surface thereof in parallel and spaced relationship relatively to the main surface of said compound semiconductor substrate, and said second semiconductor substrate being electrically connected to said photodiode region, said enclosure region and said gate electrode via respective bumps of conductive material.