Micro MIS type FET and manufacturing process therefor

• US 5,196,908 A
• Filed: 01/08/1991
• Issued: 03/23/1993
• Est. Priority Date: 01/12/1990
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kusunoki, Shigeru, Komori, Shigeki, Tsukamoto, Katsuhiro
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US07/637,871
• Time in Patent Office: 805 Days
• Field of Search: 357/23.3, 357/23.12, 357/23.7, 357/23.11, 357/90
• US Class Current: 257/327
• CPC Class Codes: H01L 29/10 with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• CPC Class Codes: Y10S 148/053 Field effect transistors fets

Abstract

A micro MIS type FET comprises first conductivity type source/drain regions formed in a surface of a semiconductor layer mutually spaced apart by a distance of less than 2 μm, a second conductivity type channel layer having an impurity concentration of less than 1×10¹⁶ /cm³ formed between the source/drain regions to have a depth less than depths of the source/drain regions, and a second conductivity type threshold voltage control region having an impurity concentration of more than 1×10¹⁷ /cm³ beneath the channel layer.

Claims

1. A micro MIS type FET comprising:

a semiconductor substrate of a first conductivity type;

a pair of source/drain regions of a second conductivity type formed in a surface of said semiconductor substrate and spaced apart by a distance of less than 2 μ

m;

a channel layer of said first conductivity type having an impurity concentration of less than 1×

10¹⁶ /cm³ formed between said source/drain regions in said substrate surface, a lower boundary of said channel layer having a depth less than depths of said source/drain regions;

a first conductivity type threshold voltage control region of impurity concentration greater than 1×

10¹⁷ /cm³ formed in said substrate surface beneath said lower boundary of said channel layer; and

an isolation insulating film selectively formed on said semiconductor substrate, and an epitaxial layer extending from said surface of said semiconductor substrate over to said isolation insulating film;

wherein said source/drain regions extends also into portions of said epitaxial layer over said isolation insulating film, and

said substrate has an abrupt change in impurity concentration at said lower boundary of said channel layer.

2. A micro MIS type FET comprising:

a semiconductor substrate of a first conductivity type;

a pair of source/drain regions of a second conductivity type formed in a surface of said semiconductor substrate and spaced apart by a distance of less than 2 μ

m,

a channel layer of said first conductivity type having an impurity concentration of less than 1×

10¹⁶ /cm³ formed between said source/drain regions in said substrate surface, said channel layer formed to have a depth less than depths of said source/drain regions;

a first conductivity type threshold voltage control region having an impurity concentration of more than 1×

10¹⁷ /cm³ formed in said substrate surface beneath said channel layer; and

an isolation insulating film selectively formed on said semiconductor substrate, and an epitaxial layer extending from the surface of said semiconductor substrate to over said isolation insulating film,

said source/drain regions extending also into portions of said epitaxial layer over said isolation insulating film.

3. The MIS type FET according to claim 2, wherein said threshold voltage control region comprises a threshold voltage control layer having an impurity concentration exceeding 1×

10¹⁷ /cm³, said threshold voltage control layer formed to have a depth less than depths of said source/drain regions.

4. The MIS type FET according to claim 2, wherein said epitaxial layer is doped with only a single impurity.