Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system

• US 5,198,072 A
• Filed: 07/06/1990
• Issued: 03/30/1993
• Est. Priority Date: 07/06/1990
• Status: Expired due to Fees

• Current Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Gabriel, Calvin T.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US07/549,511
• Time in Patent Office: 998 Days
• Field of Search: 156/643, 156/626, 156/627, 156/345, 204/192.13, 204/192.33, 204/298.03, 204/298.32, 437/7, 437/8, 427/10, 118/620, 118/665, 118/712
• US Class Current: 216/59
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for detecting imminent end-point when plasma etching a dielectric layer of a substrate by monitoring the D.C. bias voltage of the cathode during the etching process. The D.C. bias voltage gives an indirect reading of the impedance of the substrate which changes appreciably just prior to etch-through of the dielectric layer. The plasma etching process is then terminated and a less damaging etch process is used to complete the etch-through of the dielectric layer. The apparatus of the present invention includes an A.C. blocking network coupled to the cathode, an A/D converter coupled to the blocking network and a digital signal analyzer coupled to the A/D converter. Plasma etching can be automatically terminated by the signal analyzer upon the detection of imminent end-point.

Claims

1. A method for detecting imminent end-point of a dielectric etching process in a plasma etch system comprising the steps of:

placing a substrate having a dielectric layer to be etched within a plasma etch chamber proximate a cathode;

etching said dielectric layer,

detecting the direct current (D.C.) bias voltage on said cathode; and

determining imminent end-point of said etching of said dielectric layer by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.

2. A method for detecting imminent end-point as recited in claim 1 wherein said predetermined criteria includes a predetermined voltage level.

3. A method for detecting imminent end-point as recited in claim 1 wherein said step of detecting said D.C bias voltage includes monitoring said D.C. bias voltage over a period of time.

4. A method for detecting imminent end-point as recited in claim 3 wherein said predetermined criteria includes a predetermined voltage level.

5. A method for detecting imminent end-point as recited in claim 3 wherein said predetermined criteria includes a time-related change in said D.C. bias voltage.

6. A method for detecting imminent end-point as recited in claim 5 wherein said time-related change includes a change in slope of said D.C. bias voltage.

7. A method for detecting imminent end-point as recited in claim 6 wherein said change in slope includes a slope less than a predetermined value.

8. A method for detecting imminent end-point as recited in claim 6 wherein said change in slope includes a point of inflection.

9. A method for detecting imminent end-point in a dielectric etching process in a plasma etch system comprising the steps of:

placing a substrate having a dielectric layer to be etched within a chamber of a plasma etch system between a cathode and anode provided within said chamber;

applying radio frequency (R.F.) power to at least one of said cathode and said anode and releasing reactant gas into said chamber to initiate the etching of said dielectric layer;

monitoring the direct current (D.C.) bias voltage of said cathode over time; and

determining imminent end-point by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.

10. A method for detecting imminent end-point as recited in claim 9 wherein said plasma etch system is operative in a reactive ion etch (RIE) mode where R.F. power is not applied to said anode.

11. A method for detecting imminent end-point as recited in claim 9 wherein said step of monitoring said D.C. bias voltage includes digitizing said D.C. bias voltage and wherein said step of determining imminent end-point includes digitally analyzing said digitized D.C. bias voltage.

12. A method for detecting imminent end-point as recited in claim 11 further comprising the step of removing R.F. power from said cathode when it is determined that end-point is imminent.

13. A dielectric etching apparatus comprising:

a chamber;

cathode means for supporting a substrate within said chamber, said substrate having a dielectric layer to be etched;

anode means separated from said cathode means such that said substrate is between said anode means and said cathode means;

radio frequency (RF) power means coupled to at least one of said cathode means and said anode means;

reactant gas release means for releasing dielectric etching gas into said chamber;

voltage monitoring means coupled to said cathode means and operative to produce a direct current (D.C.) bias signal which varies with the thickness of said dielectric layer; and

voltage comparison means coupled to said voltage monitoring means for forming a first time derivative of said D.C. bias signal and for producing an imminent end-point signal prior to actual end-point of the dielectric etching process if this time derivative satisfies a predetermined criterion.

14. An apparatus for detecting imminent end-point as recited in claim 13 wherein said voltage monitoring means includes an alternating current (A.C.) blocking network, which substantially attenuates A.C. current but which substantially passes direct current (D.C.), coupled to said cathode and an analog-to-digital (A/D) converter coupled to said A.C. blocking network, wherein said D.C. bias signal is digital.

15. An apparatus for detecting imminent end-point as recited in claim 14 wherein said voltage comparison means includes a digital processor, wherein said digital D.C. bias signal comprises an input to said digital processor.

16. An apparatus for detecting imminent end-point as recited in claim 13 wherein an anode of said plasma etch system is not coupled to an R.F. power source such that said plasma etch system operates in a reactive ion etch (RIE) mode.

17. An apparatus for detecting imminent end-point as recited in claim 13, further comprising means for removing R.F. power in response to said end-point signal.

20. An apparatus for detecting imminent end-point as recited in claim 13, wherein said predetermined criterion is that the magnitude of said first time derivative of said D.C. bias voltage be less than a selected positive number.

18. A method for controlling an etching process when plasma etching a dielectric layer comprising the steps of:

placing a substrate having a dielectric layer to be etched within a plasma etch chamber;

etching said dielectric layer;

monitoring a change in impedance of said substrate as said dielectric layer is etched; and

terminating said etching process prior to the etch-through of said dielectric layer by comparing said change in impedance of said substrate against a predetermined criteria.

19. An apparatus for determining imminent end-point when etching a dielectric layer in a plasma etching system comprising:

monitoring means for monitoring the change in impedance of a substrate having a dielectric layer as said dielectric layer is being etched; and

comparison means for comparing said change in impedance against a predetermined criteria to determine imminent end-point.