×

Method of producing flat ECR layer in microwave plasma device and apparatus therefor

  • US 5,198,725 A
  • Filed: 07/12/1991
  • Issued: 03/30/1993
  • Est. Priority Date: 07/12/1991
  • Status: Expired due to Fees
First Claim
Patent Images

1. A microwave plasma generating device, comprising:

  • a plasma chamber for generating plasma;

    a reaction chamber having a specimen stage on which a specimen is treated with the plasma;

    gas supply means for supplying gas to the plasma generating chamber;

    means for generating a microwave electric field in the plasma and reaction chambers;

    means comprising axially spaced apart and concentric electromagnet coils for generating a magnetic field in the plasma and reaction chambers, the microwave electric field and magnetic field having perpendicularly crossing components of the magnetic field and electric field, respectively, the magnetic field having a strength which decreases in an axial direction from the plasma chamber towards the reaction chamber and having constant strength magnetic flux density lines lying in planes which are substantially parallel to each other and perpendicular to the axial direction, the magnetic field producing a flat ECR condition wherein an ECR layer extends perpendicular to the axial direction over at least 50% of the width of the plasma chamber.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×