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Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product

  • US 5,200,022 A
  • Filed: 10/03/1990
  • Issued: 04/06/1993
  • Est. Priority Date: 10/03/1990
  • Status: Expired due to Term
First Claim
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1. A method of improving a surface of alpha silicon carbide for the growth thereon of a beta silicon carbide epitaxial layer, the method comprising:

  • mechanically preparing the surface of a {0001} plane of an alpha silicon carbide substrate; and

    thereafterintroducing atoms selected from the group consisting of aluminum, gallium and phosphorous into vacant lattice positions along the mechanically prepared surface to thereby prevent the vacant lattice positions from encouraging the repetitive growth of 6H silicon carbide at those lattice positions so that chemical vapor deposition conditions that are otherwise favorable for epitaxial growth of beta silicon carbide upon the basal plane will result in such growth of beta silicon carbide upon the mechanically prepared alpha silicon carbide substrate.

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