×

Method of manufacturing silicon semiconductor acceleration sensor devices

  • US 5,202,281 A
  • Filed: 09/20/1991
  • Issued: 04/13/1993
  • Est. Priority Date: 02/12/1991
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of manufacturing a semiconductor acceleration sensor comprising:

  • oxidizing a silicon wafer to form an oxide film;

    removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever;

    depositing a thin metal film covering the U-shaped pattern that is to become the cantilever;

    etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever;

    dicing the silicon wafer into chips; and

    removing at least part of the thin metal film by mechanically deflecting the cantilever, thereby releasing the cantilever.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×