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Module-type semiconductor device of high power capacity

  • US 5,202,578 A
  • Filed: 09/16/1991
  • Issued: 04/13/1993
  • Est. Priority Date: 09/11/1989
  • Status: Expired due to Term
First Claim
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1. A subassembly for a semiconductor device of a high power capacity comprising:

  • a fist casing having terminals extending from a top surface includinga signal input terminal,a current output terminal,a current input terminal between the signal input terminal and the current output terminal, anda power semiconductor device having a control input coupled to the signal input terminal, and a current path coupled between the current input terminal and the current output terminal;

    a second casing, of substantially equivalent type of the first casing, having terminals extending from a top surface includinga signal input terminal,a current input terminal, opposed to the current output terminal of the first casing,a current output terminal between the signal input terminal and the current input terminal, anda power semiconductor device having a control input coupled to the signal input terminal, and a current path coupled between the current input terminal and the current output terminal; and

    means for electrically interconnecting the current output terminal of said first casing with the current input terminal of said second casing,wherein said first and second casings are on a plane in a pair such that the current output terminal of said first casing and current input terminal of said second casing are in proximity, and opposed to each other

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