MOS-gated thyristor

• US 5,202,750 A
• Filed: 06/03/1992
• Issued: 04/13/1993
• Est. Priority Date: 04/09/1990
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Gough, Paul A.
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): FAHMY, WAEL M
• Application Number:
  US07/894,166
• Time in Patent Office: 314 Days
• Field of Search: 357/38, 357/38 S, 357/38 P, 357/38 T, 357/38 G, 357/38 C, 357/39, 357/23.4, 357/55, 357/46
• US Class Current: 257/133
• CPC Class Codes: H01L 29/7455 produced by an insulated gate structure
• CPC Class Codes: H01L 29/749 with turn-on by field effect

Abstract

A semiconductor device includes a thyristor (4,5,8,9) in which connection is made to the cathode region (9) of the thyristor by means of an MOS structure. The MOS structure is provided by a fifth region (11) forming a pn junction with the cathode region (9), a sixth region (13) in contact with the cathode electrode (C) and forming a pn junction (14) with the fifth region (11), and an insulated gate (15) overlying a conduction channel area (110) of the fifth region (11) for defining a gateable conductive path for charge carriers into the cathode region (9) to initiate thyristor action. The conductive path is thus controlled by the voltage applied to the insulated gate (15), enabling the flow of charge carriers to the cathode region (9) to be stemmed by application of an appropriate gate voltage oxide. The fifth region (11) is electrically connected to provide a path for extraction of charge carriers during turn-off of the thyristor, thereby improving the controllable current capability of the thyristor.

Claims

1. A semiconductor device comprising a semiconductor body having formed therein a thyristor having first and second main electrodes and a gate electrode and having a first region of one conductivity type provided with the first main electrode, a second region of the opposite conductivity type forming a first pn junction with the first region, a third region of the one conductivity type forming a second pn junction with the second region and provided with the gate electrode, and a fourth region of the opposite conductivity type forming a third pn junction with the third region, characterized in that a fifth region of the one conductivity type forms with a fourth region a fourth pn junction separating the fourth region from the second main electrode, a sixth region of the opposite conductivity type is electrically connected to the second main electrode and forms a fifth pn junction with the fifth region, and an insulated gate overlies a conduction channel area of the fifth region for defining a gateable conductive path from the second main electrode and into the fourth region for charge carriers of the opposite conductivity type for initiating thyristor action, and in that an electrical connection is made to the fifth region to provide a path for extraction of charge carriers of the one conductivity type during turn-off of the thyristor.

2. A semiconductor according to claim 1, further characterized in that the gate electrode of the third region comprises an insulated gate overlying a channel area of the third region.

3. A semiconductor device according to claim 2, further characterized in that the insulated gate overlying the third region is contiguous with the insulated gate overlying the fifth region.

4. A semiconductor device according to claim 3, further characterized in that the contiguous insulated gates are defined on the side walls of a groove extending into the semiconductor body.

5. A semiconductor device according to claim 4, further characterized in that the groove is in the form of a trench having its side walls covered by an insulating layer and being filled with electrically conductive material forming the gate electrode.

6. A semiconductor device according to claim 1, further characterized in that, in at least one area of the semiconductor body, the third, fourth, fifth and sixth regions are replaced by a further region of the one conductivity with the insulated gate overlying a conduction channel area of the further region so that the further region defines with the first and second regions a three-layer structure arranged in parallel with the structure defined by the first to sixth regions between the first and second main electrodes such that the further region provides a path for extraction of charge carriers of the one conductivity during turn off of the thyristor.

7. A semiconductor device according to claim 1, further characterized in that the first main electrode is provided on one main surface of the semiconductor body and the second main electrode is provided on the other, opposed main surface of the semiconductor body.

8. A semiconductor device according to claim 1, further characterized in that the fifth region is electrically connected to the second main electrode.

9. A semiconductor device according to claim 1, further characterized in that the fifth region is connected to a further, separate electrode.