Fabry-perot modulator

• US 5,202,897 A
• Filed: 05/24/1991
• Issued: 04/13/1993
• Est. Priority Date: 05/25/1990
• Status: Expired due to Term

• Current Assignee: IPG Photonics Corporation
• Original Assignee: British Telecommunications PLC (BT Group PLC)
• Inventors: Whitehead, Mark
• Primary Examiner(s): Scott, Jr., Leon
• Application Number:
  US07/704,994
• Time in Patent Office: 690 Days
• Field of Search: 372/46, 372/26, 372/29, 372/43, 372/92
• US Class Current: 372/92
• CPC Class Codes: G02F 1/0157 using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
• CPC Class Codes: G02F 1/218 using semi-conducting materials
• CPC Class Codes: G02F 2203/02 reflective
• CPC Class Codes: G02F 3/028 based on self electro-optic effect devices [SEED]

Abstract

An asymmetric Fabry Perot (FP) modulator includes a quantum well structure having wider (approximately 150 Å) than usual (about 100 Å) wells. The FP cavity has a resonance at a wavelength of an excitonic absorption peak of the QW structure. Although the maximum change in absorption under applied bias is less with 150 Å wells than with 100 Å wells, the characteristics of the electroabsorption are also altered, with the result that the largest change occurs at the wavelength of the band-edge el-hhl exciton at zero bias. Absorption can be reduced by biasing the QW and hence the AFPM can have a normally-off (zero bias, zero reflectivity) characteristic. Such an arrangement makes possible higher contrast modulation and/or lower operating voltages. The FP modulator may be used in SEEDs.

Claims

1. A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure having a barrier width sufficient to prevent resonant coupling between wells in the structure, wherein absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.

2. A modulator as claimed in claim 1 wherein substantially each of a plurality of barrier layers in said structure are at least 40 A thick.

3. A modulator as claimed in claim 1 wherein the multiple quantum well structure comprises a plurality of wells having a width of between 130 and 160 Å

.

4. A modulator as claimed in claim 3, wherein the well width is at least 140 Å

.

5. A modulator as claimed in claim 4, wherein the well width is at least 145 Å

.

6. A modulator as claimed in claim 3, wherein the well width is no more than 155 Å

.

7. A modulator as claimed in claim 6, wherein the well width is no more than 150 Å

.

8. A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises barrier layers having widths of between 40 and 100 Å

.

9. A modulator as claimed in claim 8, wherein the barrier width is no more than 70 Å

.

10. A modulator as claimed in claim 9 wherein the barrier width is between 45 and 65 Å

.

11. A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises GaAs wells and AlGaAs barriers.

12. A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises no more than 30 wells.

13. A modulator as claimed in claim 12, wherein there are between 10 and 30 wells.

14. A self electro-optic device comprising at least one modulator according to claim 1.

15. A device as claimed in claim 14, wherein a load element of the device is grown on a common substrate with said modulator.

16. A device as claimed in claim 15, wherein the load element is a diode grown on top of said modulator.

17. A device as claimed in claim 15, wherein the load element is a second modulator.

18. A method of modulating light, which method comprises directing an optical input at a lower reflectivity facet of a modulator according to claim 1, and applying a modulating electric signal to electrodes of the modulator.

19. A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure, the quantum well structure having an excitonic peak wherein the wavelength of an excitonic peak of the quantum well structure in an unbiased state coincides with a resonance of the cavity.

20. A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities, the cavity including a multiple quantum well structure comprised of well regions separated by barriers, wherein the thickness of the barriers is chosen to prevent resonant coupling between the well regions, and wherein the thickness of the well regions and the thickness of the barriers are chosen whereby absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.