Process and structure of an integrated vacuum microelectronic device
First Claim
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1. A process of making at least one integrated vacuum microelectronic device comprising the steps of:
- a) providing at least one hole in a substrate having at least one electrically conductive material,b) filling at least a portion of said hole with at least one material sufficiently to form a cusp,c) depositing at least one layer of a material which is capable of emitting electrons under the influence of an electrical field, and filling at least a portion of said cusp to form a tip,d) providing at least one access hole to help facilitate the removal of material underneath the cusp, ande) removing the material underneath said cusp to expose at least a portion of said tip of said electron-emitting material and at least a portion of said electrically conductive material in said substrate, thereby forming said at least one integrated vacuum microelectronic device.
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Abstract
The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.
163 Citations
49 Claims
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1. A process of making at least one integrated vacuum microelectronic device comprising the steps of:
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a) providing at least one hole in a substrate having at least one electrically conductive material, b) filling at least a portion of said hole with at least one material sufficiently to form a cusp, c) depositing at least one layer of a material which is capable of emitting electrons under the influence of an electrical field, and filling at least a portion of said cusp to form a tip, d) providing at least one access hole to help facilitate the removal of material underneath the cusp, and e) removing the material underneath said cusp to expose at least a portion of said tip of said electron-emitting material and at least a portion of said electrically conductive material in said substrate, thereby forming said at least one integrated vacuum microelectronic device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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21. A process of making at least one integrated vacuum microelectronic device comprising the steps of:
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a) providing at least one hole in a substrate having at least one electrically conductive material, b) depositing at least one insulative material and filling said hole to form a cusp, c) depositing at least one layer of a material which is capable of emitting electrons under the influence of an electrical field, and filling at least a portion of said cusp to form a tip, d) providing at least one access hole to help facilitate the removal of material underneath the cusp, and e) through said access hole removing all of said material in said hole and exposing at least a portion of said tip of said electron-emitting material and at least a portion of said electrically conductive material in said substrate, thereby forming said at least one integrated vacuum microelectronic device. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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Specification