Magnetoresistive sensor based on the spin valve effect

• US 5,206,590 A
• Filed: 12/11/1990
• Issued: 04/27/1993
• Est. Priority Date: 12/11/1990
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Mauri, Daniele, Parkin, Stuart S. P., Speriosu, Virgil S., Wilhoit, Dennis R., Dieny, Bernard, Gurney, Bruce A., Lambert, Steven E.
• Primary Examiner(s): Snow, Walter E.
• Application Number:
  US07/625,343
• Time in Patent Office: 868 Days
• Field of Search: 324/252, 338/32 R, 360/113
• US Class Current: 324/252
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/096 anisotropic magnetoresistance sensors
• CPC Class Codes: G11B 2005/0018 by current biasing control or regulation
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures

Abstract

A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

Claims

1. The magnetoresistive sensor comprising:

a first and a second thin film layer of ferromagnetic material separated by a thin film layer of non-magnetic metallic material, the magnetization direction of said first layer of ferromagnetic material being substantially perpendicular to the magnetization direction of said second layer of ferromagnetic material at zero applied magnetic field;

means for fixing the magnetization direction of said second layer of ferromagnetic material;

means for producing a current flow through said magnetoresistive sensor; and

means for sensing the variations in the resistivity of said magnetoresistive sensor due to rotation of the magnetization in said first layer of ferromagnetic material as a function of the magnetic field being sensed.

3. The magnetoresistive sensor of claim 1 wherein said means for fixing the magnetization direction of said second layer of ferromagnetic material comprises providing said second layer of ferromagnetic material with a substantially higher coercivety than the coercivety of said first layer of ferromagnetic material.

4. The magnetoresistive sensor of claim 1 wherein said means for fixing the magnetization direction of said second layer of ferromagnetic material comprises a thin film layer of antiferromagnetic material in direct contact with said second layer of ferromagnetic material.

5. The magnetoresistive sensor of claim 1 wherein said means for fixing the magnetization direction of said second layer of ferromagnetic material comprises a thin film layer of a hard ferromagnetic material in direct contact with said second layer of ferromagnetic material.

7. The magnetoresistive sensor of claim 1 wherein said first layer of ferromagnetic material has a thickness within the range of about 50 to about 150 angstroms.

9. The magnetoresistive sensor of claim 1 wherein said layer of non-magnetic material has a thickness within the range of about 16 to about 40 angstroms.

11. The magnetoresistive sensor of claim 1 wherein the magnetization direction of said layers of ferromagnetic material is established relative to the direction of said current flow so that the anisotropic magnetoresistance is additive to said changes in resistance of said magnetoresistive sensor due to rotation of the magnetization in said first layer of ferromagnetic material.

14. The magnetoresistive sensor of claim 1 additionally comprising means for producing a longitudinal bias sufficient to maintain said first layer of ferromagnetic material in a single domain state.

15. The magnetoresistive sensor of claim 14 wherein said means for producing a longitudinal bias comprises a layer of antiferromagnetic material in direct contact with the end regions only of said first layer of ferromagnetic material.

16. The magnetoresistive sensor of claim 14 wherein said means for producing a longitudinal bias comprises a layer of hard ferromagnetic material in direct contact with the end regions only of said first layer of ferromagnetic material.

2. A magnetoresistive sensor comprising:

a first and a second layer of ferromagnetic material separated by a layer of non-magnetic metallic material, the magnetization direction of said first layer of ferromagnetic material being substantially perpendicular to the magnetization direction of said second layer of ferromagnetic material at zero applied magnetic field;

means for producing a longitudinal bias sufficient to maintain said first layer of ferromagnetic material in a single domain state;

means for producing a current flow through said magnetoresistive sensor; and

means for sensing the variations in the resistivity of said magnetoresistive sensor due to the difference in rotation of the magnetizations in said first and second layers of ferromagnetic materials as a function of the magnetic field being sensed.

6. The magnetoresistive sensor of claim 2 wherein said first layer of ferromagnetic material has a thickness within the range of about 50 to about 150 angstroms.

8. The magnetoresistive sensor of claim 2 wherein said layer of non-magnetic material has a thickness within the range of about 16 to about 40 angstroms.

10. The magnetoresistive sensor of claim 2 wherein said magnetization direction of said layers of ferromagnetic material is established relative to the direction of said current flow so that the anisotropic magnetoresistance is additive to said changes in resistance of said magnetoresistive sensor due to rotation of the magnetization in said layers of ferromagnetic material.

12. The magnetoresistive sensor of claim 2 wherein said means for producing a longitudinal bias comprises a layer of antiferromagnetic material in direct contact with the end regions only of said first layer of ferromagnetic material.

13. The magnetoresistive sensor of claim 2 wherein said means for producing a longitudinal bias comprises a layer of hard ferromagnetic material in direct contact with the end regions only of said first layer of ferromagnetic material.