Photodetector scintillator radiation imager having high efficiency light collection

• US 5,208,460 A
• Filed: 09/23/1991
• Issued: 05/04/1993
• Est. Priority Date: 09/23/1991
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Pimbley, Joseph M., Rougeot, Henri M.
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US07/764,291
• Time in Patent Office: 589 Days
• Field of Search: 250/368, 250/366, 250/367
• US Class Current: 250/368
• CPC Class Codes: G01T 1/2002 Optical details, e.g. reflecting or diffusing layers
• CPC Class Codes: G01T 1/20183 Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
• CPC Class Codes: G01T 1/20187 Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
• CPC Class Codes: G01T 1/202 the detector being a crystal

Abstract

A radiation imager comprising an array of scintillator elements optically coupled to a photodetector array comprises a dielectric layer extending around at least the sidewalls of the scintillator elements, and preferably over the surface of the scintillator elements through which the incident radiation enters, and an optically reflective layer disposed over the dielectric layer. The dielectric layer has an optical index that is less than that of the scintillator material, and consequently light collection efficiency of the scintillator is improved as light photons generated in the scintillator reflected back into the scintillator both at the interface of the scintillator and the dielectric layer and at the optically reflective layer. A dome-shaped surface at the end of the scintillator element through which the incident radiation enters and an undulatory-shaped surface at the end of the scintillator which is optically coupled to the photodetectors further increase the light collection efficiency of the scintillator by reducing the number of photons that undergo total internal reflection in the scintillator.

Claims

1. A radiation imaging device comprising:

an array of photodetectors;

a plurality of scintillator elements arranged in an array, each of said elements having a first end surface through which incident radiation enters the scintillator element and a second end surface optically coupled to said photodetector array, each of said scintillator elements further having sidewalls extending between said first and second end surfaces;

a non-optically diffusive dielectric layer disposed immediately adjacent to and extending around at least said sidewalls of each of said scintillator elements, said dielectric layer having an optical index that is less than the optical index of said scintillator element; and

an optically reflective layer adjoining said dielectric layer.

2. The device of claim 1 wherein said dielectric layer extends over said first end surfaces of said scintillator elements.

3. The device of claim 1 wherein each of said first end surfaces is dome-shaped.

4. The device of claim 3 wherein the radius of said dome-shaped end surface is between about 2 and about 5 times the width of said scintillator element.

5. The device of claim 1 wherein said dielectric layer comprises a gas.

6. The device of claim 1 wherein said dielectric layer comprises a liquid.

7. The device of claim 1 wherein said dielectric layer comprises a solid.

8. The device of claim 7 wherein said dielectric layer comprises one of the group consisting of silicon oxide, polyimide, paralene, and cryolite.

9. The device of claim 1 wherein the thickness of said low optical index dielectric layer is not less than about one-half the wavelength of characteristic light emission of said scintillator element.

10. The device of claim 1 wherein said optically reflective layer comprises a material having a specular surface.

11. The device of claim 10 wherein said optically reflective layer comprises one of the group consisting of aluminum, silver, gold, and multi-layer dielectric reflectors.

12. The device of claim 1 wherein said second end surfaces of said scintillator elements are each of an undulatory shape, said undulatory shape being selected to minimize internal reflection of light photons striking said second surface from within said scintillator element.

13. The device of claim 12 wherein said shaped second end surface is curvilinear between each adjacent pair of a trough and a crest.

14. The device of claim 13 wherein said curvilinear surface of each scintillator element is shaped so that the maximum angle between reflected paths of light photons travelling in substantially parallel paths when incident on any two points on the interior of said curvilinear surface is π

/60 radians.

15. The device of claim 1 wherein said scintillator elements comprise cesium iodide.

16. A radiation imaging device comprising:

an array of photodetectors;

a plurality of scintillator elements arranged in an array, each of the elements having a first end surface through which incident radiation enter the scintillator element and a second end surface optically coupled to said photodetector array, each of said elements further having sidewalls extending between said first and second end surfaces;

said scintillator array being optically coupled to said photodetector array via an optical coupling medium disposed therebetween;

said first end surfaces of said scintillator elements being substantially dome shaped and said second end surfaces being curvilinear and having a rippled shape so as to optimize passage of said light photons striking said second surface from within said scintillator element to said photodetector array;

a dielectric layer extending around at least said sidewalls of each of said scintillator elements, said dielectric layer having an optical index that is less than the optical index of said scintillator element;

a plurality of interstitial wall members connected together and disposed around the sidewalls of each of said scintillator elements, said wall members being positioned so that said dielectric layer is disposed between a respective one of said wall members and a respective one of said scintillator element sidewalls;

an optically reflective layer disposed on the surfaces of said interstitial wall members and adjoining said dielectric layer, said optically reflective layer further being disposed over said dome-shaped scintillator first end surfaces;

a processing circuit coupled to receive signals generated by said photodetector array; and

display and analysis equipment coupled to, and responsive to, said processing circuit for displaying images in response to radiation detected by said array of photodetectors.

17. The device of claim 16 wherein said dielectric layer comprises air.

18. The device of claim 16 wherein said dielectric layer comprises one of the group consisting of silicon oxide, polyimide, paralene, and cryolite.

19. The device of claim 16 wherein said optically reflective layer comprises a material of the group consisting of aluminum, silver, gold, and multi-layer dielectric reflectors.

20. The device of claim 16 wherein said scintillator elements comprise cesium iodide.

21. The device of claim 16 wherein said interstitial wall members comprise a material of the group consisting of tungsten, molybdenum, tantalum, uranium, cobalt and nickel.