Lithium niobate single crystal thin film and production method thereof

• US 5,209,917 A
• Filed: 05/17/1991
• Issued: 05/11/1993
• Est. Priority Date: 09/20/1989
• Status: Expired due to Term

• Current Assignee: Ibiden Co., Ltd.
• Original Assignee: Ibiden Co., Ltd.
• Inventors: Enomoto, Ryo, Yamada, Masaya, Ohno, Satoshi
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US07/700,169
• Time in Patent Office: 725 Days
• Field of Search: 156/621, 156/624, 156/DIG. 71, 156/DIG. 87, 423/592, 423/593, 423/641
• US Class Current: 423/594.8
• CPC Class Codes: C30B 19/02 using molten solvents, e.g. flux
• CPC Class Codes: C30B 19/04 the solvent being a component of the crystal composition
• CPC Class Codes: C30B 29/30 Niobates; Vanadates; Tantalates
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: Y10S 117/918 Single-crystal waveguide

Abstract

A lithium niobate single crystal thin film formed on a lithium tantalate substrate, in which the a-axis lattice constant of the lithium tantalate substrate and the a-axis lattice constant of the lithium niobate single crystal thin film are lattice matched.

To achieve the lattice matching, the lithium tantalate substrate is contacted with a molten composition to epitaxially grow a lithium niobate single crystal thin film, the molten composition mainly comprising Li₂ O, V₂ O₅, Nb₂ O₅, Na₂ O and MgO, whereby the a-axis lattice constant of the lithium niobate single crystal thin film and the a-axis lattice constant of the lithium tantalate substrate are matched to each other.

With this arrangement, a lithium niobate single crystal thin film with large thickness and low propagation loss can be obtained without poling, which could not be obtained with prior art methods, thus greatly contributing to the optical device industry.

Claims

1. A lithium niobate single crystal thin film formed on a lithium tantalate substrate, characterized in that said lithium niobate single crystal thin film is formed on a (0001) surface of said lithium tantalate substrate, the a-axis lattice constant of said lithium niobate single crystal thin film is 99.81 to 100.07% of the a-axis lattice constant of said lithium tantalate substrate, and said lithium niobate single crystal thin film has an optical propagation loss of 1.4 dB/cm or less.

2. The lithium niobate single crystal thin film of claim 1 wherein an a-axis lattice constant of said lithium tantalate substrate is 5.128 to 5.173 angstroms.

3. The lithium niobate single crystal thin film of claim 1 wherein said lithium tantalate substrates contains a different element at least in part of its surface.

4. The lithium niobate single crystal thin film of claim 3 wherein said different element is at least one selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), nickel (Ni), and neodymium (Nd).

5. The lithium niobate single crystal thin film of claim 1 containing sodium.

6. The lithium niobate single crystal thin film of claim 5 wherein the content of sodium is 0.1 to 14.3 mole %.

7. The lithium niobate single crystal thin film of claim 1 containing magnesium.

8. The lithium niobate single crystal thin film of claim 7 wherein the content of magnesium is 0.8 to 10.8 mole %.

9. The lithium niobate single crystal thin film of claim 1 containing at least one element selected from the group consisting of neodymium (Nd), rhodium (Rh), zinc (Zn), nickel (Ni), cobalt (Co), and titanium (Ti).

10. A method for producing a lithium niobate single crystal thin film comprising contacting a lithium tantalate substrate with a molten composition to epitaxially grow a lithium niobate single crystal thin film, said molten composition comprising Li₂ O, V₂ O₅, Nb₂ O₅, Na₂ O and M_g O, thereby growing said lithium niobate single crystal thin film having an a-axis lattice constant of 99.81 to 100.07% that of said lithium tantalate substrate on a (0001) surface of said lithium tantalate substrate.

11. The method for producing a lithium niobate single crystal thin film of claim 10 wherein the a-axis lattice constant of said lithium tantalate substrate is adjusted to 5.128 to 5.173 angstroms.

12. The method for producing a lithium niobate single crystal thin film of claim 10 wherein said lithium tantalate substrate is a lithium niobate single crystal substrate formed with a lithium tantalate single crystal thin film.

13. The method for producing a lithium niobate single crystal thin film of claim 10 wherein said lithium tantalate substrate is added a different element at least in part of its surface.

14. The method for producing a lithium niobate single crystal thin film of claim 10 wherein the method of adding said different element is selected from thermal diffusion, ion exchange, ion implantation, liquid phase epitaxy, and raw material addition.

15. The method for producing a lithium niobate single crystal thin film of claim 10 wherein said molten composition is in a compositional range of Li₂ O, V₂ O₅, and Nb₂ O₅ within the area surrounded by five compositional points A(88.90, 2.22, 8.88), B(55.00, 43.00, 2.00), C(46.50, 51.50, 2.00), D(11.11, 80.00, 8.89), and E(37.50, 5.00, 57.50) in a triangular diagram of ternary system of Li₂ O-V₂ O₅ -Nb₂ O₅.

16. The method for producing a lithium niobate single crystal thin film of claim 10 wherein the Na₂ O/Li₂ O molar ratio is 2.0/98.0 to 93.5/6.5.

17. The method for producing a lithium niobate single crystal thin film of claim 10 wherein the MgO/lithium niobate molar ratio is 0.1/99.9 to 25.0/75.0.

18. The method for producing a lithium niobate single crystal thin film of claim 10 wherein said molten composition contains at least one oxide selected from the group consisting of oxides of neodymium (Nd), rhodium (Rh), zinc (Zn), nickel (Ni), cobalt (Co), and titanium (Ti).

19. The method for producing a lithium niobate single crystal thin film of claim 10 wherein said lithium niobate single crystal thin film is grown at a temperature of 600°

to 1,250°

C.