Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same
First Claim
1. A membrane composite consisting of a homogenous single phase of silicon carbide and silicon nitride in a molar ratio in the range from 95:
- 5 to 30;
70.
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Accused Products
Abstract
An X-ray transmitting homogeneous membrane suitable for use in a mask for X-ray lithography is disclosed which compositely consists of silicon carbide and silicon nitride in a specified molar proportion. The membrane can be prepared by depositing a film of a homogeneous composite of silicon carbide and silicon nitride on a silicon wafer as a substrate by sputering using a target which is also a sintered composite material of silicon carbide and silicon nitride. As compared with membranes of silicon carbide alone or silicon nitride alone, the inventive membrane is advantageous in respect of the high resistance against high-energy irradiation, chemicals and moisture as well as in respect of high visible-light transmission, especially, when the tensile stress within the membrane is in a specified range.
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Citations
1 Claim
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1. A membrane composite consisting of a homogenous single phase of silicon carbide and silicon nitride in a molar ratio in the range from 95:
- 5 to 30;
70.
- 5 to 30;
Specification
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- Resources
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Current AssigneeShin-Etsu Chemical Company Limited
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Original AssigneeShin-Etsu Chemical Company Limited
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InventorsKubota, Yoshihiro, Nagata, Yoshihiko, Kashida, Meguru
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Primary Examiner(s)Bowers, Jr., Charles L.
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Assistant Examiner(s)NEVILLE, THOMAS
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Application NumberUS07/850,691Time in Patent Office426 DaysField of Search430/5, 430/966, 378/34, 378/35, 428/446, 428/698, 501/92, 156/659.1, 156/657, 204/192.1US Class Current430/5CPC Class CodesG03F 1/22 Masks or mask blanks for im...Y10S 430/167 X-ray
