Electric field light-emitting device

• US 5,210,430 A
• Filed: 12/27/1989
• Issued: 05/11/1993
• Est. Priority Date: 12/27/1988
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kurihara, Noriko, Taniguchi, Yasushi, Hirabayashi, Keiji, Ikoma, Keiko
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Ho, Tan
• Application Number:
  US07/457,864
• Time in Patent Office: 1,231 Days
• Field of Search: 357/17, 357/16, 357/61, 313/503, 313/509, 313/311, 428/690, 428/691, 427/38, 427/39, 427/64, 427/66, 427/122, 437/26, 437/100
• US Class Current: 257/103
• CPC Class Codes: C09K 11/65 containing carbon in organic compounds C09K11/06
• CPC Class Codes: H05B 33/12 Light sources with substantially two-dimensional radiating surfaces
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: H05B 33/18 characterised by the nature or concentration of the activator
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: H05B 33/26 characterised by the composition or arrangement of the conductive material used as an electrode

Abstract

An electric field effect light emitting device comprises a light emitting layer consisting of a diamond-like carbon film containing oxygen.

Claims

1. An electric field effect light emitting device comprising first and second conductive members and a light emitting layer consisting of a diamond-like carbon film containing oxygen located between said first and second conductive members, wherein the concentration of oxygen is less than about 5 atomic %.

2. A device according to claim 1, wherein said light emitting layer further contains a small amount of an element other than oxygen.

3. A device according to claim 2, wherein said element other than oxygen is present in said light emitting layer in an amount from 0.1 to 3 wt. %.

4. A device according to claim 2, wherein said element other than oxygen is selected from the group consisting of B, Te, As, Au, Mg, P, Sb, Si, Ta, N, halides, sulfides and oxides thereof.

5. A device according to claim 2, wherein said element other than oxygen is selected from the group consisting of Tl, Ba, Li, Cd, Cs, In, Ra, S, Sr, Ti, Zn, Ca, Ce, Co, Cr, Fe, Ga, K, Mn, Nb, Os, Pb, Rb, Rh, Sc, Th, V, W, Y, halides, sulfides and oxides thereof.

6. A device according to claim 2, wherein said element other than oxygen is selected from the group consisting of Ag, Be, Bi, Cu, Ge, Hg, Pt, Re, Zr, Al, Ir, Ni, Ru, Sn, Tb, halides, sulfides and oxides thereof.

7. A device according to claim 1, wherein said light emitting layer is substantially transparent to visible light.

8. A device according to claim 1, wherein said light emitting layer has a resistivity ≧

10⁹ Ω

·

cm.

9. A device according to claim 8, wherein said resistivity is in a range from 10⁹ to 10¹³ Ω

·

cm.

10. A device according to claim 9, wherein said resistivity is ≧

10¹² Ω

·

cm.

11. A device according to claim 1, wherein said light emitting layer has a Vickers hardness ≧

2,000 kg/mm².

12. An electric field effect light emitting device comprising a first and second conductive members and a light emitting layer consisting of a thin film of monocrystalline or polycrystalline diamond located between said first and second conductive members, further comprising at least one insulating layer between (i) said first conductive member and said light emitting layer or (ii) said second conductive member and said light emitting layer, wherein said light emitting layer contains a small amount of an element constituting light emitting centers.

13. A device according to claim 12, wherein said light emitting layer is substantially transparent to visible light.

14. A device according to claim 12, wherein said second conductive layer is composed of a metal.

15. A device according to claim 14, wherein said metal is selected from Al, Au, Ag, Pt, W, Cu, Ti and Ni.

16. A device according to claim 12, wherein said element constituting light emitting centers is selected from the group consisting of B, Te, As, Au, Mg, P, Sb, Si, Ta, N, halides, sulfides and oxides thereof.

17. A device according to claim 12, wherein said element constituting light emitting centers is selected from the group consisting of Tl, Ba, Li, Cd, Cs, In, Ra, S, Sr, Ti, Zn, Ca, Ce, Co, Cr, Fe, Ga, K, Mn, Nb, Os, Pb, Rb, Rh, Sc, Th, V, W, Y, halides, sulfides and oxides thereof.

18. A device according to claim 12, wherein said element constituting light emitting centers is selected from the group consisting of Ag, Be, Bi, Cu, Ge, Hg, Pt, Re, Zr, Al, Ir, Ni, Ru, Sn, Tb, O, halides, sulfides, and oxides thereof.

19. A device according to claim 12, wherein said insulating layer has a thickness from 500 to 5,000 Å

.

20. A device according to claim 19, wherein the diamond light emitting layer has a light emitting area ≧

1 μ

m².

21. A device according to claim 12, wherein said conductive layers have a thickness from 500 to 1,500 Å

.

22. A device according to claim 12, wherein said first conductive layer is a transparent conductive film.

23. A device according to claim 22, wherein said transparent conductive film is composed of a material selected from ITO, SnO₂, ZnO, SnO₂ -Sb and Cd₂ SnO₄.

24. A device according to claim 12, wherein said insulating layer is provided between said light emitting layer and said first conductive layer, and also between said light emitting layer and said second conductive layer.

25. A device according to claim 24, wherein said insulating layers provided between said light emitting layer and said first conductive layer and between said light emitting layer and said second conductive layer have mutually different thicknesses.

26. A device according to claim 12, wherein said insulating layer is composed of a material selected from Y₂ O₃, HfO₂, Si₃ N₄, Al₂ O₃, Ta₂ O₅, PbTiO₃, BaTa₂ O₆, SiO₂ and SrTiO₃.

27. A device according to claim 12, comprising a protective layer on at least one of said conductive layers.

28. A device according to claim 12, wherein said light emitting layer is selectively formed with regular patterns.

29. A device according to claim 28, wherein the (100) plane of the diamond light emitting layer is oriented parallel to a substrate.

30. A device according to claim 28, wherein said light emitting layer is formed as a two-dimensional matrix.

31. A device according to claim 12, wherein said light emitting layer is selectively formed with regular patterns, and either of said first and second conductive members is formed as stripes.

32. A device according to claim 31, wherein said light emitting layer is formed as a two-dimensional matrix.

33. A device according to claim 12, wherein said insulating layer provided between said conductive member and said light emitting layer is composed of plural layers.

34. An electric field effect light emitting device comprising with a first conductive member, a thin diamond film light emitting layer, and a second conductive member, wherein said diamond film has a substantially flat surface having a surface coarseness not exceeding 500 Å

in average, and said light emitting layer is located between said first and second conductive members.

35. A device according to claim 34, wherein said light emitting layer has a thickness from 0.5 to 5 μ

m.

36. A device according to claim 35, wherein said light emitting layer has a thickness from 0.7 to 3 μ

m.

37. A device according to claim 36, wherein said light emitting layer has a thickness from 1 to 2 μ

m.

38. A device according to claim 34, wherein said light emitting layer further contains atoms constituting light emitting centers.

39. A device according to claim 38, wherein said atoms constituting light emitting centers are uniformly distributed in a direction across said layer.

40. A device according to claim 39, wherein said atoms constituting light emitting centers are selected from a group consisting of Ag, Be, Bi, Cu, Ge, Hg, Pt, Re, Zr, Al, Ir, Ni, Ru, Sn, Tb, O, halides, sulfides and oxides thereof.

41. A device according to claim 38, wherein said atoms constituting light emitting centers are unevenly distributed in a direction across said layer.

42. A device according to claim 41, wherein said atoms constituting light emitting centers are more densely distributed at the side of conductive member.

43. A device according to claim 38, wherein said atoms constituting light emitting centers are selected from a group consisting of B, Te, As, Au, Ag, Mg, P, Sb, Si, Ta, N, halides, sulfides and oxides thereof.

44. A device according to claim 38, wherein said atoms constituting light emitting centers are selected from a group consisting of Tl, Ba, Li, Cd, Cs, In, Ra, S, Sr, Ti, Zn, Ca, Ce, Co, Cr, Fe, Ga, K, Mn, Nb, Os, Pb, Rb, Rh, Sc, Th, V, W, Y, halides, sulfides and oxides thereof.

45. A device according to claim 34, wherein said first conductive member is a transparent conductive film.

46. A device according to claim 45, wherein said transparent conductive film is composed of a material selected from ITO, SnO₂, ZnO, SnO₂ -Sb and Cd₂ SnO₄.

47. A device according to claim 34, wherein said second conductive member is composed of a metal.

48. A device according to claim 47, wherein said metal is selected from Al, Au, Ag, Pt, W, Cu, Ti and Ni.

49. A device according to claim 34, further comprising an insulating layer at least between said light emitting layer and said first or second conductive member.

50. A device according to claim 49, wherein said insulating layer is composed of a material selected from HfO₂, Si₃ N₄, Al₂ O₃, Ta₂ O₅, PbTiO₃, BaTa₂ O₆ and SrTiO₃.

51. A device according to claim 38, wherein the ratio (IE/IC) of number of said atoms constituting light emitting centers to the carbon atoms in said light emitting layer is within a range from 5×

10^-1 to 1×

10^-5.

52. A device according to claim 34, wherein the ratio (IE/IC) of number of crystal defects of said light emitting layer to the carbon atoms thereof is within a range from 5×

10^-2 to 1×

10^-5.