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Dry etching method by sulfur conditioning

  • US 5,211,790 A
  • Filed: 02/26/1992
  • Issued: 05/18/1993
  • Est. Priority Date: 02/26/1991
  • Status: Expired due to Fees
First Claim
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1. A dry etching method comprising the steps ofgrowing sulfur from a gaseous phase on at least a part of the inner wall surface of an etching chamber, andetching a layer of a silicon-based material on a wafer using an SF6 containing etching gas during sublimation of said sulfur.

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