Dry etching method by sulfur conditioning

• US 5,211,790 A
• Filed: 02/26/1992
• Issued: 05/18/1993
• Est. Priority Date: 02/26/1991
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Tatsumi, Tetsuya
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/841,946
• Time in Patent Office: 447 Days
• Field of Search: 156/646, 156/662, 156/643, 156/657
• US Class Current: 438/695
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: Y10S 438/909 Controlled atmosphere

Abstract

A method for anisotropic etching of a layer of a silicon-based material, using an SF₆ gas, a versatile etching gas, is proposed. Sulfur (S) is used as a sidewall protection substance. This sulfur is not supplied into an etching reaction system on discharge dissociation of the etching gas, but is supplied by being sublimed off on heating from the inner wall surface of the etching chamber on which it is previously grown from a gaseous phase. Specifically, the S₂ F₂ gas is introduced while a predetermined region of the inner wall surface of the etching chamber is cooled, and preliminary discharge is carried out to deposit sulfur on the region. A SF₆ containing etching gas is introduced into the chamber and the above mentioned region is heated for subliming S and simultaneously etching the layer of the silicon-based material. With this method, there is no necessity of using a specific etching gas capable of yielding free S in the plasma under discharge dissociating conditions. The present invention has an important significance as post-CFC (chlorofluorocarbon) gas measures. After end of etching, sulfur may be easily sublimed off by heating the wafer without the risk of pollution by particles.

Claims

1. A dry etching method comprising the steps of

growing sulfur from a gaseous phase on at least a part of the inner wall surface of an etching chamber, and

etching a layer of a silicon-based material on a wafer using an SF₆ containing etching gas during sublimation of said sulfur.

2. A dry etching method as claimed in claim 1 wherein said sulfur is grown from a gaseous phase by preliminary discharge using a source gas containing at least one sulfur halide selected from the group consisting of S₂ F₂, SF₂, SF₄, S₂ F₁₀, S₃ Cl₂, S₂ Cl₂, SCl₂, S₃ Br₂, S₂ Br₂ and SBr₂.

3. A dry etching method as claimed in claim 1 wherein at least a part of the inner wall surface of the etching chamber on which sulfur is grown from a gaseous phase is cooled and heated during growth of sulfur from the gaseous phase and during sulfur sublimation, respectively.

4. A dry etching method as claimed in claim 1 wherein the layer of the silicon-based material is etched while the wafer temperature is controlled to -100°

C. to room temperature.

5. A dry etching method as claimed in claim 1 wherein the layer of the silicon-based material is formed of one of single crystal silicon, polysilicon, refractory metal silicide or polycide.