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Method of forming a permselective layer

  • US 5,212,050 A
  • Filed: 08/15/1990
  • Issued: 05/18/1993
  • Est. Priority Date: 11/14/1988
  • Status: Expired due to Term
First Claim
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1. A method for forming a permselective layer on preselected areas of a substantially planar sensing device which comprises:

  • (a) establishing a photoresist layer on a substantially planar sensing device;

    (b) processing said photoresist layer using photolithographic techniques to expose preselected areas of said sensing device;

    (c) establishing at least one film comprising a silane compound mixed with a suitable solvent on the sensing device of step (b), said compound having the formula R'"'"'n Si(OR)4-n, in which n is an integer selected from the group consisting of 0, 1, and 2;

    R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms; and

    R is a hydrogen radical or a lower alkyl radical comprising 1-4 carbon atoms; and

    (d) heating said film to a temperature of at least about 100°

    C. for a period of time effective to form a permselective layer having a thickness of about 1 to about 1000 nm sufficient to provide said permselective layer with the desired semipermeable properties in which molecules having about a first preselected molecular weight or above are substantially precluded from permeating through said permselective layer, while molecules having about a second preselected molecular weight or below may effectively permeate therethrough; and

    (e) removing the underlying photoresist layer and the permselective layer overlaid thereover from all except the preselected areas of said sensing device.

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