Method of forming a permselective layer
First Claim
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1. A method for forming a permselective layer on preselected areas of a substantially planar sensing device which comprises:
- (a) establishing a photoresist layer on a substantially planar sensing device;
(b) processing said photoresist layer using photolithographic techniques to expose preselected areas of said sensing device;
(c) establishing at least one film comprising a silane compound mixed with a suitable solvent on the sensing device of step (b), said compound having the formula R'"'"'n Si(OR)4-n, in which n is an integer selected from the group consisting of 0, 1, and 2;
R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms; and
R is a hydrogen radical or a lower alkyl radical comprising 1-4 carbon atoms; and
(d) heating said film to a temperature of at least about 100°
C. for a period of time effective to form a permselective layer having a thickness of about 1 to about 1000 nm sufficient to provide said permselective layer with the desired semipermeable properties in which molecules having about a first preselected molecular weight or above are substantially precluded from permeating through said permselective layer, while molecules having about a second preselected molecular weight or below may effectively permeate therethrough; and
(e) removing the underlying photoresist layer and the permselective layer overlaid thereover from all except the preselected areas of said sensing device.
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Abstract
A method of forming a permselective layer on preselected areas of a substantially planar sensing device is disclosed. The claimed method includes establishing and confining a liquid film, derived from a silane compound mixed in a suitable solvent, within a predetermined area of the sensing device. The process relates to photolithographic imaging and developing methods coupled to a film-curing step that provides a patterned permselective layer having the desired semipermeable characteristics.
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Citations
48 Claims
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1. A method for forming a permselective layer on preselected areas of a substantially planar sensing device which comprises:
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(a) establishing a photoresist layer on a substantially planar sensing device; (b) processing said photoresist layer using photolithographic techniques to expose preselected areas of said sensing device; (c) establishing at least one film comprising a silane compound mixed with a suitable solvent on the sensing device of step (b), said compound having the formula R'"'"'n Si(OR)4-n, in which n is an integer selected from the group consisting of 0, 1, and 2;
R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms; and
R is a hydrogen radical or a lower alkyl radical comprising 1-4 carbon atoms; and(d) heating said film to a temperature of at least about 100°
C. for a period of time effective to form a permselective layer having a thickness of about 1 to about 1000 nm sufficient to provide said permselective layer with the desired semipermeable properties in which molecules having about a first preselected molecular weight or above are substantially precluded from permeating through said permselective layer, while molecules having about a second preselected molecular weight or below may effectively permeate therethrough; and(e) removing the underlying photoresist layer and the permselective layer overlaid thereover from all except the preselected areas of said sensing device. - View Dependent Claims (2, 3, 4, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 39, 47, 48)
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5. A method of forming a permselective layer on preselected areas of a substantially planar sensing device which comprises:
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(a) establishing at least one film comprising a silane compound mixed with a suitable solvent on a substantially planar sensing device, said compound having the formula R'"'"'n Si(OR)4-n, in which n is an integer selected from the group consisting of 0, 1 and 2;
R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms; and
R is a hydrogen radical or a lower alkyl radical comprising 1-4 carbon atoms; and(b) heating said film to a temperature of at least about 100°
C. for a period of time effective to form a permselective layer having a thickness of about 1 to about 1,000 nm sufficient to provide said permselective layer with the desired semipermeable properties in which molecules having about a first preselected molecular weight or above are substantially precluded from permeating through said permselective layer, while molecules having about a second preselected molecular weight or below may effectively permeate therethrough;(c) establishing a photoresist layer on said permselective layer; (d) processing said photoresist layer using photolithographic techniques such that a proportion of the underlying permselective layer becomes exposed and subject to further processing, while those preselected areas of the device retain a protective cap of photoresist material; (e) removing said exposed permselective layer; and (f) removing said protective photoresist layer to leave a permselective layer over preselected areas of said device. - View Dependent Claims (6, 7, 8, 9, 10)
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29. A method for forming a patterned semipermeable solid film onto a planar sensing device which comprises:
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(a) establishing a layer of a resist material over a planar sensing device; (b) subjecting the layer of step (a) to radiant energy through a photolithographic mask and developing the resultant irradiated layer such that preselected area of said device become exposed and subject to further processing; (c) establishing a liquid film over the patterned layer of step (b), which liquid film comprises an organosilicon compound mixed with a suitable solvent, said compound having the formula R'"'"'Si(OR)3 in which R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms and R is a lower alkyl radical comprising 1-4 carbon atoms; (d) heating the liquid film of step (c) to a temperature of at least about 100°
C. for a period of time effective to form a solid film having a thickness of about 20 to about 500 Å
sufficient to provide said solid film with the desired semipermeable properties in which molecules having molecular weights above a given threshold can be effectively excluded from entering and diffusing through said solid film, while allowing the free passage and diffusion of lower molecular weight electroactive species; and(e) exposing the solid film of step (d) to a solvent capable of dislodging the underlying layer of resist material and allowing said solid film to separate from said device, leaving a patterned semipermeable solid film over the preselected areas of said device. - View Dependent Claims (30, 31, 37, 38, 40, 41, 42, 43, 44, 45, 46)
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32. A method of forming a patterned semipermeable solid film onto a planar sensing device which comprises:
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(a) establishing a liquid film over a planar sensing device, which liquid film comprises an organosilicon compound mixed with a suitable solvent, said compound having the formula R'"'"'Si(OR)3 in which R'"'"' is a hydrocarbon radical comprising 3-12 carbon atoms and R is a lower alkyl radical comprising 1-4 carbon atoms; (b) heating the liquid film of step (a) to a temperature of at least about 100°
C. for a period of time effective to form a solid film having a thickness of about 20 to about 500 Å
sufficient to provide said solid form with the desired semipermeable properties in which molecules having molecular weights above a given threshold can be effectively excluded from entering and diffusing through said solid film, while allowing the free passage and diffusion of lower molecular weight electroactive species;(c) establishing a layer of a resist material over the solid film of step (b); (d) subjecting the layer of step (c) to radiant energy through a photolithographic mask and developing the resultant irradiated layer such that a substantial proportion of the underlying solid film becomes exposed and subject to further processing, while those preselected areas of the device retain a protective cap of resist material; (e) subjecting the exposed solid film of step (d) to an etchant for a length of time sufficient to remove substantially all of said exposed solid film; and
semipermeable solid film over the preselected areas of said device. - View Dependent Claims (33, 34, 35, 36)
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Specification