Laser diode assembly with tunnel junctions and providing multiple beams

• US 5,212,706 A
• Filed: 12/03/1991
• Issued: 05/18/1993
• Est. Priority Date: 12/03/1991
• Status: Expired due to Term

• Current Assignee: University of Connecticut (State of Connecticut)
• Original Assignee: University of Connecticut (State of Connecticut)
• Inventors: Jain, Faquir C.
• Primary Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/802,056
• Time in Patent Office: 532 Days
• Field of Search: 372/50, 372/45, 372/97, 372/23, 372/44
• US Class Current: 372/50.1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18397 Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
• CPC Class Codes: H01S 5/223 Buried stripe structure H01S5/227 takes precedence
• CPC Class Codes: H01S 5/3095 Tunnel junction
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs
• CPC Class Codes: H01S 5/4018 Lasers electrically in series
• CPC Class Codes: H01S 5/4043 with vertically stacked active layers
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A laser diode assembly provides multiple output beams from multiple p-n junctions in a multiplicity of stacked laser diodes with at least one tunnel junction. A semiconductor substrate has a multiplicity of superposed semiconductor laser stacks thereon each having an active layer sandwiched between p and n layers, and at least one pair of adjacent semiconductor laser stacks has a tunnel junction therebetween. When a potential is applied across the ohmic contacts on the outer surface of the substrate and the outer surface of the uppermost semiconductor laser stack, lasing is produced in the semiconductor stacks to form multiple beams. The tunnel junction may be provided by highly doped p⁺, n⁺ layers between the stacks, or it may be provided by highly doped abutting p⁺, n⁺ surface portions in the adjacent stacks. Tunnel junctions may be provided at the interfaces between all of the stacks, or between all but one pair of the adjacent stacks. The assembly may be edge emitting or surface emitting, and it may include single or multiple quantum well configurations and distributed feedback configuration.

Claims

1. A laser diode assembly providing multiple output beams from multiple p-n junctions and at least one tunnel junction comprising:

(a) a semiconductor substrate;

(b) a multiplicity of superposed semiconductor laser stacks thereon each having an active layer sandwiched between p and n layers, and at least one pair of adjacent semiconductor laser stacks having a tunnel junction therebetween; and

(c) ohmic contacts on the outer surface of said substrate and the outer surface of the uppermost semiconductor laser stack, whereby an applied potential across said ohmic contacts produces lasing in the active layers semiconductor laser stacks on the opposite sides of said tunnel junction.

2. The laser diode assembly in accordance with claim 1 wherein the ends of said semiconductor stacks are reflecting and form a cavity, and wherein laser beams are emitted through one end of said stacks.

3. The laser diode assembly in accordance with claim 1 wherein said tunnel junction is provided by highly doped p⁺, n⁺ layers between said stacks.

4. The laser diode assembly in accordance with claim 3 wherein an assembly of adjacent stacks and tunnel junction comprises, seriatim, p, n, n⁺, p⁺ p, n, n⁺, p⁺, p and n layers.

5. The laser diode assembly in accordance with claim 1 wherein said tunnel junction is provided by highly doped abutting p⁺, n⁺ surface portions in the adjacent stacks.

6. The laser diode assembly in accordance with claim 1 wherein the top and bottom stacks are dimensioned and formulated to provide reflecting dielectric mirrors at the top and bottom of the assembly and thereby confine the lasing therebetween.

7. The laser diode assembly in accordance with claim 6 wherein said substrate permits the laser beam to exit from the bottom dielectric mirror of the laser diode assembly.

8. The laser diode assembly in accordance with claim 6 wherein said dielectric mirrors are realized by quarter wave thick layers of compatible low and high index of refraction semiconductors.

9. The laser diode assembly in accordance with claim 7 wherein said substrate and its ohmic contact are configured to provide an aperture for the laser beam to exit.

10. The laser diode assembly in accordance with claim 7 wherein the dimensions and composition of the semiconductor layers of said stacks and substrate cooperate to generate a laser beam of a wavelength to which the substrate is transparent.

11. The laser diode assembly in accordance with claim 1 wherein at least one of said laser stacks has an active layer which provides a multiple quantum well.

12. The laser diode assembly in accordance with claim 1 wherein positive distributed feedback is provided by periodic corrugation on at least one side of the active layer of at least one stack and the laser beams are emitted through one end of the assembly.

13. The laser diode assembly in accordance with claim 1 wherein at least two of said stacks are of different composition to provide laser beams of at least two different wavelengths.

14. The laser diode assembly in accordance with claim 1 wherein tunnel junctions are provided between all of said stacks.

15. The laser diode assembly in accordance with claim 1 wherein tunnel junctions are provided between all but one pair of said adjacent stacks to provide, seriatim, p,n,p,n layers in said but one pair, to exhibit optoelectronic triggering inherent in p-n,p-n structures.