Plasma processing method

• US 5,213,658 A
• Filed: 01/23/1991
• Issued: 05/25/1993
• Est. Priority Date: 10/26/1990
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ishida, Tomoaki
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/644,625
• Time in Patent Office: 853 Days
• Field of Search: 156/643, 156/345, 156/652, 204/298.31, 204/192.12, 204/192.32, 204/298.02, 427/39, 118/723
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H01J 37/32697 Electrostatic control

Abstract

In a plasma processing method and a plasma processing apparatus, plasma is processed by floating a focus ring by the repulsion between a magnet mounted in the focus ring and another electromagnet and adjusting the height of the focus ring to an optimal height by the current flowing to the electromagnet. Therefore, it is possible to set an optimal height of the focus ring for each layer in the laminated film etching, to enhance the uniformity of the laminated film etching, and to achieve a precise etching.

Claims

1. A plasma processing method comprising:

placing a substrate to be processed on a high frequency electrode disposed in a processing container;

exhausting gas from said processing container and introducing reactive gas into said processing container;

generating a plasma in said processing container by applying high frequency electric power to said high frequency electrode, thereby processing the substrate; and

while generating a plasma, levitating a focus ring having a magnet therein and surrounding the substrate to a predetermined height above the high frequency electrode with a magnetic field produced by another magnet.

2. A plasma processing method according to claim 1 including processing said substrate by etching a laminated film comprising a plurality of layers and disposed on said substrate and adjusting the height of said focus ring during etching of each of said layers.

3. A plasma processing method according to claim 1 including processing said substrate by etching a single layer film disposed on said substrate in more than one etching step.