Reference electrode, ion sensor and method of manufacturing the same

• US 5,213,675 A
• Filed: 06/19/1991
• Issued: 05/25/1993
• Est. Priority Date: 10/27/1988
• Status: Expired due to Fees

• Current Assignee: Terumo Kabushiki Kaisha
• Original Assignee: Terumo Kabushiki Kaisha
• Inventors: Yamaguchi, Shuichiro, Uchida, Naoto, Shimomura, Takeshi, Oyama, Noboru, Katsube, Teruaki
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Bell, Bruce F.
• Application Number:
  US07/717,645
• Time in Patent Office: 706 Days
• Field of Search: 204/435, 204/191.2, 204/192.11, 204/192.15, 204/418, 204/416
• US Class Current: 204/418
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A reference electrode for generating a reference potential on an ion sensor is disclosed. The reference electrode has a lamination film covering a surface of an electrically conductive substrate and formed by alternately laminating silver halide thin films and hydrophobic resin thin films.

Claims

1. An ion sensor comprising an electrically conductive substrate, and redox function film formed by a neutral atom beam sputtering process on a surface of said substrate and an ion-sensitive film covering said redox function film.

2. An ion sensor comprising a gate insulation film of a MOS field-effect transistor, and a redox function film formed by a neutral atom beam sputtering process on a surface of said gate insulation film and an ion-sensitive film covering said redox function film.

3. A method of manufacturing an ion sensor comprising a step of forming a target of a redox function substance on a predetermined substrate surface, a step of sputtering said target by projecting a neutral atom beam onto said redox function substance to thereby form a redox function film on said substrate surface and a step of forming an ion-sensitive film on a surface of said redox function film.

4. An ion sensor comprising:

an electrically conductive first substrate;

a redox function film formed on a surface of said first substrate by preparing a film formed on a second electrically conductive substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said first substrate; and

an ion-sensitive film covering said redox function film.

5. An ion sensor comprising:

a gate insulation film of a MOS filed effect transistor;

a redox function film formed on a surface of said gate insulation film by preparing a film formed on a predetermined substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said gate insulation film; and

an ion-sensitive film covering said redox function film.