Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning

• US 5,213,986 A
• Filed: 04/10/1992
• Issued: 05/25/1993
• Est. Priority Date: 04/10/1992
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: North American Philips Corp. (Koninklijke Philips N.V.)
• Inventors: Merchant, Steven L., Arnold, Emil, Pinker, Ronald D.
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US07/867,729
• Time in Patent Office: 410 Days
• Field of Search: 437/20, 437/62, 437/225, 437/914, 437/974, 437/966, 148/DIG. 12, 148/DIG. 51
• US Class Current: 438/459
• CPC Class Codes: H01L 21/2205 from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges

Abstract

A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.

Claims

1. A method for making SOI devices comprising the steps of

(a) forming a first oxide layer on a first silicon wafer;

(b) implanting boron ions into a surface layer of a second silicon wafer;

(c) bonding said surface layer to said oxide layer;

(d) etching said second silicon wafer to said boron implanted layer;

(e) growing a second thin oxide layer on the surface of said second silicon wafer; and

(f) annealing said layers in a hydrogen atmosphere to drive said boron ions into said first oxide layer, thereby reducing the boron doping concentration in said surface layer.

2. A method according to claim 1, wherein said step (a) is carried out to a thickness of about 1-2 microns.

3. A method according to claim 1, wherein said step (b) is carried out with at a dopant concentration of 10²⁰ per cm³ at an implant energy of 25 keV to 200 keV.

4. A method according to claim 1, wherein said step (d) is carried out with silicon etchants.

5. A method according to claim 4, wherein said etchants includes one of ethylenediamine and pyrocatechol or potassium hydroxide.

6. A method according to claim 1, wherein said thin oxide layer is grown to a thickness of 100-200 angstroms.

7. A method according to claim 1, wherein said step (f) is carried out at a temperature ranging from 1100°

C. to 1200°

C. with a hydrogen concentration greater than 10% by volume.

8. A method according to claim 1, wherein said step of annealing is carried out for a time sufficient to reduce the concentration of boron in said surface layer to below 10¹⁷ per cm³.