Optically controlled microwave switch and signal switching system

• US 5,214,275 A
• Filed: 09/30/1991
• Issued: 05/25/1993
• Est. Priority Date: 09/30/1991
• Status: Expired due to Fees

• Current Assignee: Curators of the University of Missouri (University of Missouri)
• Original Assignee: The Boeing Co.
• Inventors: Ray, Sankar, Freeman, James L.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): SHAMI, KHALED
• Application Number:
  US07/768,836
• Time in Patent Office: 603 Days
• Field of Search: 250/208.4, 250/214 R, 250/214 SW, 250/208.5, 250/208.6, 250/211 J, 357/22, 357/30 E, 357/30 G, 357/30 I, 307/311
• US Class Current: 250/208.4
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/785 controlling field-effect transistor switches

Abstract

Disclosed is an optically activated microwave switch (10) which includes a field-effect transistor (12) that is switched between conducting and nonconducting states by a photodiode (14) that is connected between the field-effect transistor gate and drain electrode and a photodiode (16) that is connected between the field-effect transistor gate and source electrode. The circuit is configured and arranged for switching unbiased sinusoidal microwave signals of a frequency as high as approximately 10 gigahertz. A cascade arrangement of switches (10) provides increased signal handling capability in situations in which a single switch cannot be employed. Monolithic integrated circuit realizations of both single stage and cascaded stage arrangements are disclosed in which the semiconductor substrate is GaAs, the field-effect transistors are metal-semiconductor field-effect transistors and the photodiodes are interdigitated metal-semiconductor-metal devices.

Claims

1. An optoelectronic microwave switching system comprising:

means for supplying a microwave signal;

transmission means for conveying said microwave signal;

switch means for receiving said microwave signal and for operating in an on state to pass said signal therethrough and in an off state to block passage of said signal therethrough, said switch means including a field-effect transistor having a gate electrode, a source electrode and a drain electrode one of said source and drain electrodes being connected to said transmission means, and at least two photodiodes, each having an anode and a cathode, the anodes of two of said photodiodes being coupled to said gate electrode of said field-effect transistor, the cathodes of said two photodiodes being respectively coupled to the source and drain electrodes of said field-effect transistor, said two photodiodes being responsive to optical energy to control the state of operation of said switch means;

a light source remote from said switch means for selectively supplying optical energy; and

light transmission means for conveying optical energy from said remote light source to said photodiodes so as to activate said photodiodes to control the state of operation of said switch means.

2. The system of claim 1, wherein two photodiodes are employed in said switch with the cathode of the first one of said two photodiodes being directly connected to the source electrode of said field-effect transistor and the cathode of the second one of said two photodiodes being directly connected to said drain electrode of said field-effect transistor.

3. The system of claim 2, wherein said two photodiodes are Schottky barrier diodes.

4. The system of claim 1, wherein said photodiodes and said field-effect transistor are monolithically integrated in a common substrate.

5. The system of claim 4, wherein two photodiodes are included in said switch means with the cathode of one of said two photodiodes being directly connected to the source electrode of said field-effect transistor and with the cathode of the second photodiode being directly connected to said drain electrode of said field-effect transistor.

6. The system of claim 5, wherein said common substrate is gallium arsenide.

7. The system of claim 5, wherein said field-effect transistor is an enhancement-mode metal semiconductor field-effect transistor.

8. The system of claim 5, wherein said transistor is a heterostructural-based transistor.

9. The system of claim 2, wherein said switch means includes a first resistor connected between said gate and said source electrodes of said field-effect transistor and includes a second resistor connected between said gate and drain electrodes of said field-effect transistor.

10. The system of claim 4, wherein said anodes of said two photodiodes are realized as first and second sets of commonly connected spaced-apart finger-like metallization regions that extend along the surface of the substrate and form a Schottky barrier with said substrate.

11. The system of claim 10, wherein said cathode of one of said photodiodes is formed by a set of commonly connected spaced-apart finger-like conductive regions that are interdigitated with said first set of said finger-like metallization regions that form said Schottky barrier and wherein said cathode of the of said photodiodes is formed by a set of finger-like spaced-apart conductive regions that are interdigitated with said second set of finger-like metallization regions that form said Schottky barrier.

12. The system of claim 11, wherein said field-effect transistor is an enhancement mode metal-semiconductor field-effect transistor and said substrate is gallium arsenide.

16. The system defined in claim 1, in which the switch means includes:

a semi-insulating substrate formed of a Group III-V semiconductor, said substrate having at least one substantially planar surface the field-effect transistor being a metal-semiconductor field-effect transistor including spaced apart source and drain metallizations formed on said substantially planar surface of said substrate and a gate metallization that extends along said substantially planar surface of said substrate in spaced-apart juxtaposition with said source and drain metallizations, said metal-semiconductor field-effect transistor exhibiting a first drain-to-source conduction state when the difference in electrical potential between said gate metallization and both said drain and source metallizations is less than a predetermined amount and exhibiting a second drain-to-source conduction state when the electrical potential at said gate metallization differs from the electrical potential at said source and drain metallizations by at least said predetermined amount, the photodiodes including at least two metal-semiconductor-metal photodiodes formed on said planar surface of said substrate, said photodiodes being electrically interconnected with said gate electrode, said drain electrode and said source electrode of said metal-semiconductor field-effect transistor for controlling the potential at said gate metallization to maintain said field-effect transistor in said first drain-to-source conduction state when said photodiodes are illuminated and to maintain said metal-semiconductor field-effect transistor in said second drain-to-source conduction state when said metal-semiconductor-metal diodes are not illuminated.

17. The system of claim 16 wherein said Group III-V semiconductor compound is gallium arsenide.

18. The system of claim 17 wherein said metal-semiconductor field-effect transistor is an enhancement mode device, said gate metallization of said metal-semiconductor field-effect transistor is electrically connected to the anode electrodes of first and second metal-semiconductor-metal photodiodes, the cathode of said first metal-semiconductor-metal photodiode is connected to said drain metallization of said metal-semiconductor field-effect transistor, and the cathode of said second metal-semiconductor-metal photodiode is connected to said source metallization of said metal-semiconductor field-effect transistor, said first and second metal-semiconductor-metal photodiodes maintaining said gate metallization at a potential that allows bidirectional current flow between said source and drain electrodes when said metal-semiconductor-metal photodiodes are illuminated.

19. The system of claim 18 wherein said source and drain metallizations are substantially rectangular in geometry and are of substantially equal area;

and wherein said gate metallization forms a Schottky barrier with said semi-insulating substrate.

20. The system of claim 19 wherein said gate metallization is of relatively narrow strip-like geometry and extends beyond said drain and source metallization, said anodes of said metal-semiconductor-metal photodiodes being defined by substantially parallel spaced-apart extensions of said gate metallization that extend along substantially planar surface of said substrate and are substantially orthogonal to said gate metallization;

said cathodes of said first and second metal-semiconductor-metal photodiodes being defined by substantially parallel spaced-apart finger-like conductive regions that are interspersed with said substantially parallel spaced-apart finger-like extensions of said gate metallization.

21. The system of claim 20 wherein said substantially parallel spaced-apart conductive regions that define said cathodes of said metal-semiconductor-metal photodiodes are ion implanted n⁺ regions that extend inwardly into said semi-insulating semiconductor substrate from said substantially planar surface.

22. The system of claim 21 wherein said substantially parallel spaced-apart finger-like regions that define said anodes of said first and second metal-semiconductor-metal photodiodes and said substantially parallel spaced-apart conductive regions that define said cathodes of said metal-semiconductor-metal photodiodes are positioned within a substantially rectangular region of said substantially planar surface of said semi-insulating substrate.

23. The system of claim 22 wherein said metal-semiconductor-metal photodiodes are illuminated by an optical fiber and wherein said substantially rectangular region of said substantially planar semi-insulating substrate is commensurate in area with the optical spot size of said optical fiber.

13. An optically activated microwave switching apparatus comprising:

a plurality of cascade connected optoelectronic switch stages, each switch stage including a field-effect transistor and two photodiodes, the anodes of each of said two photodiodes being connected to the gate of said field-effect transistor and the cathodes of said two photodiodes being respectively connected to the drain and source of said field-effect transistor.

14. The optically activated microwave switching apparatus of claim 13 wherein said plurality of cascade connected optoelectronic switch stages is monolithically integrated using a gallium arsenide substrate;

said field-effect transistor of each said cascade connected optoelectronic switch stage is a metal-semiconductor field-effect transistor and each said photodiode is a metal-semiconductor-metal structure in which the photodiode is formed by sets of interdigitated conductive finger-like regions.

15. The optically activated microwave switching apparatus of claim 13 wherein each of said cascade connected optoelectronic switch stages includes a pair of resistors, one of said resistors being connected between the gate and source of the field-effect transistor of the optoelectronic switch stage and the other one of said pair of resistors being connected between the gate and drain of the field-effect transistor of the optoelectronic switch stage.

24. An integrated circuit microwave frequency switch comprising:

a semi-insulating substrate formed of a Group III-V semiconductor, said substrate having at least one substantially planar surface;

a metal-semiconductor field-effect transistor including spaced apart source and drain metallizations formed on said substantially planar surface of said substrate and a gate metallization that extends along said substantially planar surface of said substrate in spaced-apart juxtaposition with said source and drain metallizations, said metal-semiconductor field-effect transistor exhibiting a first drain-to-source conduction state when the difference in electrical potential between said gate metallization and both said drain and source metallizations is less than a predetermined amount and exhibiting a second drain-to-source conduction state when the electrical potential at said gate metallization differs from the electrical potential at said source and drain metallizations by at least said predetermined amount;

at least two metal-semiconductor-metal photodiodes formed on said planar surface of said substrate, said photodiodes being electrically interconnected with said gate electrode, said drain electrode and said source electrode of said metal-semiconductor field-effect transistor for controlling the potential at said gate metallization to maintain said field-effect transistor in said first drain-to-source conduction state when said photodiodes are illuminated and to maintain said metal-semiconductor field-effect transistor in said second drain-to-source conduction state when said metal-semiconductor-metal diodes are not illuminated;

said gate metallization of said metal semiconductor field-effect transistor being electrically connected to the anode electrodes of said two metal-semiconductor-metal photodiodes, the cathode of one of said metal-semiconductor-metal photodiodes being connected to said drain metallization of said metal-semiconductor field-effect transistor, and the cathode of the other metal-semiconductor-metal photodiode being connected to said source metallization of said metal-semiconductor field-effect transistor, said metal-semiconductor-metal photodiodes maintaining said gate metallization at a potential that allows bidirectional current flow between said source and drain electrodes when said metal-semiconductor-metal photodiodes are illuminated said gate metallization being of relatively narrow strip-like geometry and extending beyond said drain and source metallization, said anodes of said metal-semiconductor-metal photodiodes being defined by substantially parallel spaced-apart extensions of said gate metallization that extend along said substantially planar surface of said substrate and being substantially orthogonal to said gate metallization, said cathodes of said first and second metal-semiconductor-metal photodiodes being defined by substantially parallel spaced-apart finger-like conductive regions that are interspersed with said substantially parallel spaced-apart finger-like extensions of said gate metallization.

25. The integrated circuit microwave frequency switch of claim 24 wherein said substantially parallel spaced-apart finger-like regions that define said anodes of said first and second metal-semiconductor-metal photodiodes and said substantially parallel spaced-apart conductive regions that define said cathodes of said metal-semiconductor-metal photodiodes are positioned within a substantially rectangular region of said substantially planar surface of said semi-insulating substrate.

26. The integrated circuit microwave frequency switch of claim 25 wherein said metal-semiconductor-metal photodiodes are illuminated by an optical fiber and wherein said substantially rectangular region of said substantially planar semi-insulating substrate is commensurate in area with the optical spot size of said optical fiber.

27. The integrated circuit microwave frequency switch of claim 26 wherein said source and drain metallizations are substantially rectangular in geometry and are of substantially equal area;

and wherein said gate metallization forms a Schottky barrier with said semi-insulating substrate.

28. The integrated circuit microwave frequency switch of claim 27 wherein said substantially parallel spaced-apart conductive regions that define said cathodes of said metal-semiconductor-metal photodiodes are ion implanted n⁺ regions that extend inwardly into said semi-insulating semiconductor substrate from said substantially planar surface.

29. An optoelectronic integrated microwave switch comprising:

a substantially planar Group III-V semiconductor substrate;

a plurality of n metal-semiconductor field-effect transistors, said plurality of n metal-semiconductor transistors being defined by a plurality of (n+1) substantially rectangular metallization regions and by a plurality of n strip-like metallization regions, said (n+1) metallization regions being formed on one surface of said substantially planar semiconductor substrate with boundary edges of said (n+1) metallization regions being substantially parallel to one another, said n strip-like metallization regions extending along said surface of said semiconductor substrate with each said strip-like metallization region being positioned between and substantially parallel to boundary edges of said different pair of said (n+1) metallization regions;

each said strip-like metallization region defining a gate electrode of a different one of n metal-semiconductor field-effect transistors with said pair of said (n+1) metallization regions that is associated with said strip-like metallization region defining the drain and source electrodes of that particular one of said n metal-semiconductor field-effect transistors; and

n-pairs of Schottky barrier photodiodes formed on said surface of said semiconductor substrate, each pair of said Schottky barrier photodiodes being associated with and electrically connected to a different one of said strip-like metallization regions that defines a gate electrode of one of said n metal-semiconductor field-effect transistors and being associated with and electrically connected to the pair of metallization regions that define said source and drain electrodes of that particular one of said n metal-semiconductor field-effect transistors, said n-pairs of Schottky barrier photodiodes maintaining said n metal-semiconductor field-effect transistors in a first state of electrical conductivity when said n pairs of photodiodes are illuminated and a second state of electrical conductivity when said n pair of photodiodes are not illuminated.

30. The optoelectronic integrated microwave switch of claim 29 wherein each of said n-pairs of Schottky barrier diodes is a pair of metal-semiconductor-metal diodes in which the anode and cathode of each diode is defined by a first and second series of interdigitated spacedapart finger-like conductive regions.

31. The optoelectronic integrated microwave switch of claim 30 in which said n-pairs of metal-semiconductor-metal photodiodes are positioned on said surface of said semiconductor substrate to define a photosensitive region sized to substantially correspond with the optical spot size of an optical fiber.

32. The optoelectronic integrated microwave switch of claim 31 wherein each said strip-like metallization region that defines a gate electrode of one of said n metal-semiconductor field-effect transistors extends outwardly from between said boundary edges of the spaced-apart pair of said of (n+1) metallization regions associated with that particular strip-like metallization region to form said series of spaced-apart finger-like conductive regions that define anodes of the pair of metal-semiconductor-metal photodiodes that is associated with and electrically connected to said strip-like metallization region.

33. The optoelectronic microwave integrated switch of claim 32 wherein at least one of said first and second series of said interdigitated spaced-apart finger-like conductive regions that define the anodes and cathodes of said n-pairs of metal-semiconductor-metal photodiodes is formed by ion implantation.

34. The optoelectronic integrated microwave switch of claim 33 wherein said Group III-IV semiconductor substrate is gallium arsenide.