Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
First Claim
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1. A multi-dimensional high-resolution probe comprising:
- a first probe;
a first piezoelectric transducer attached to the first probe, wherein the first piezoelectric transducer is capable of moving the fist probe in at least one dimension;
a first means for applying a variable electric field to the first piezoelectric transducer;
a second probe;
a second piezoelectric transducer attached to the second probe;
a second means for applying a variable electric field to the second piezoelectric transducer;
a means for applying current between the first and second probes; and
a means for measuring voltage between the first and second probes.
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Abstract
A probe which is positioned in at least one axis by a piezoelectric transducer is provided. One or more piezoelectric transducers control position of the probe with respect to another probe, with respect to a sample surface, or with respect to a previous position of the probe itself. A method for measuring spreading resistance is provided where the distance between two probes is reproducibly controlled in the range of a few angstroms by measuring tunneling current between the two probes, and electrical contact between the two probes and a sample is reproducibly provided by monitoring current between the probes and the sample.
63 Citations
14 Claims
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1. A multi-dimensional high-resolution probe comprising:
- a first probe;
a first piezoelectric transducer attached to the first probe, wherein the first piezoelectric transducer is capable of moving the fist probe in at least one dimension;
a first means for applying a variable electric field to the first piezoelectric transducer;
a second probe;
a second piezoelectric transducer attached to the second probe;
a second means for applying a variable electric field to the second piezoelectric transducer;
a means for applying current between the first and second probes; and
a means for measuring voltage between the first and second probes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- a first probe;
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9. A multi-dimensional high-resolution probe for semiconductor spreading resistance measurements comprising:
- a firs probe;
a first piezoelectric transducer attached to the first probe;
a first control circuit for applying a variable electric field to the first piezoelectric transducer;
a second probe;
a second piezoelectric transducer attached to the second probe; and
a second control circuit for applying a variable electric field to the second piezoelectric transducer;
a first bias voltage source coupled between the first probe and a semiconductor sample, wherein the first bias voltage source drives a tunneling current between the first probe and the semiconductor sample;
a first means for monitoring the tunneling current between the first probe and the semiconductor sample;
a second bias voltage source coupled between the second probe and the semiconductor sample, wherein the second bias voltage source drives a tunneling current between the second probe and the semiconductor sample;
a means for monitoring the tunneling current between the second probe and the semiconductor sample;
a third bias voltage source coupled between the first and second probes, wherein the third bias voltage source drives a tunneling current between the first and second probes;
a means for monitoring the tunneling current between the first and second probes;
a means for measuring spreading resistance between the first and second probes when the probes are in electrical contact with the semiconductor sample.
- a firs probe;
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10. A method for making high-resolution spreading resistance measurements comprising the steps:
- providing a sample surface to be measured;
providing first and second probes;
moving the first probe in a vertical Z-axis to a coarse distance over the sample surface;
moving the second probe in the Z-axis to a coarse distance over the sample surface;
monitoring a first tunneling current between the first and second probes;
moving the first and second probes in a Y-axis towards each other until the first tunneling current reaches a first predetermined magnitude;
monitoring a second current between at least one of the probes and the sample surface;
moving the first and second probes towards the sample surface in the Z-axis until the second current reaches a second predetermined magnitude;
measuring spreading resistance between the first and second probes; and
moving the probes in an X-axis, wherein the steps of measuring spreading resistance and moving the probes in an X-axis are performed more than one time. - View Dependent Claims (11, 12, 13, 14)
- providing a sample surface to be measured;
Specification