Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
DCFirst Claim
1. A semiconductor power device comprising:
- a first contact layer of a first conductivity type;
a second contact layer of a second conductivity type; and
a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the voltage sustaining layer further comprising a thin dielectric layer located between one of said first semiconductor regions and one of said second semiconductor regions for isolating said one of said first semiconductor regions and said one of said second semiconductor regions, the first contact layer contacting said first semiconductor region forming a first interface, the second contact layer contacting the first and second semiconductor regions directly forming a second interface.
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Abstract
A semiconductor power device wherein the reverse voltage across the p+ -regions(s) and the n+ -regions(s) is sustained by a composite buffer layer, shortly as CB-layer. The CB-layer contains two kinds of semiconductor regions with opposite types of conduction. These two kinds of regions are alternatively arranged, viewed from any cross-section parallel to the interface between the layer itself and the n+ (or p+)-region. Whereas the hitherto-used voltage sustaining layer contains only one kind of semiconductor with single type of conduction in the same sectional view. Design guidelines are also provided in this invention. The relation between the on-resistance in unit area Ron and the breakdown voltage VB of the CB-layer invented is Ron ocVB113 which represents a breakthrough to the conventional voltage sustaining layer, whereas the other performances of the power devices remain almost unchanged.
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Citations
19 Claims
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1. A semiconductor power device comprising:
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a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the voltage sustaining layer further comprising a thin dielectric layer located between one of said first semiconductor regions and one of said second semiconductor regions for isolating said one of said first semiconductor regions and said one of said second semiconductor regions, the first contact layer contacting said first semiconductor region forming a first interface, the second contact layer contacting the first and second semiconductor regions directly forming a second interface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor power device comprising:
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a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions to form a second interface wherein the first and second semiconductor regions are doped with dopants and the effective dopant distribution in every region in the voltage sustaining region is non-uniform, the dopant concentration in the first semiconductor regions is greater near the first contact layer than near the second contact layer and the dopant concentration in the second semiconductor regions is greater near the second contact layer than near the first contact layer. - View Dependent Claims (12, 13)
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14. A semiconductor power device comprising:
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a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type which are alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, one of the first semiconductor regions and one of the second semiconductor regions form a close packed hexagonal unit, the first semiconductor region is within a circle about the center of the close-packed hexagonal unit and one of said second semiconductor regions is outside the circle. - View Dependent Claims (15, 16)
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17. A semiconductor power device comprising:
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a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, the first and second semiconductor regions are square-shaped and form a mosaic pattern. - View Dependent Claims (18, 19)
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Specification