Gas sensor arrangement

• US 5,217,692 A
• Filed: 06/10/1991
• Issued: 06/08/1993
• Est. Priority Date: 10/17/1989
• Status: Expired due to Term

• Current Assignee: Paragon AG
• Original Assignee: ETR Elektronik Technologie RUMP GmbH
• Inventors: Kohl, Claus-Dieter, Rump, Hanns
• Primary Examiner(s): Warden, Robert J.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/689,857
• Time in Patent Office: 729 Days
• Field of Search: 422/94, 422/98, 73/23.2, 73/25.03, 73/31.05, 73/31.06, 338/34, 340/632
• US Class Current: 422/98
• CPC Class Codes: F02B 1/04 with fuel-air mixture admission into cylinder
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid
• CPC Class Codes: G01N 33/0031 comprising two or more sensors, e.g. a sensor array

Abstract

A gas sensor arrangement has at least a first sensor element which is primarily sensitive towards oxidizable gases and generates a corresponding measuring signal and an electric control and evaluation unit, wherein the measuring signal generated by the first sensor element is evaluated. In order to avoid inaccuracies when in addition to the oxidizable gases at the same time also reducible gases are present, the gas sensor arrangement is provided with at least one second sensor element, which is primarily sensitive to reducible gases and generates a corresponding measuring signal, which is fed to the control and evaluation unit for evaluation.

Claims

1. A gas sensor system for he detection of an oxidizable gas in the presence of a reducing gas capable of masking the detection of said oxidizable gas, comprising:

first sensor sensitive to an oxidizable gas which generates a signal representative of the concentration of the oxidizable gas, said signal capable of being masked by a reducible gas;

a second sensor sensitive to said reducible gas; and

a signal evaluator connected to said first and second sensors and provided with logic circuitry which eliminates from said signal any falsifying effect which may be created by the reducible gas thereby providing an output representing a true concentration of said oxidizable gas.

2. The system defined in claim 1 wherein said second sensor includes at least one phthalocyanine sensor element and said first sensor comprises at least one metal-oxide sensor element, all of said sensor elements having respective outputs connected to said logic circuitry for logically combining outputs of said at least one phthalocyanine sensor element with outputs of said at least one metal-oxide sensor element and thereby providing at an output of said logic circuitry a measure of oxidizable gas concentration.

3. The system defined in claim 2, further comprising an air temperature sensor element and an air humidity sensor element connected to said logic circuitry for correcting the output of said logic circuitry in accordance with air temperature and humidity, respectively.

4. The system defined in claim 2 wherein said at least one metal-oxide sensor element and said at least one phthalocyanine sensor element are provided on a common heatable carrier separated thermally form one another by a SiO₂ gap.

5. The system defined in claim 2 wherein at lest one of said sensor elements is a thin-film sensor element applied to a polysilicon carrier.

6. The system defined in claim 2 wherein at lest one of said sensor elements is a thick-film sensor element applied together with a heater to an aluminum-oxide carrier.

7. The system defined in claim 2 wherein at least one of said metal oxide sensor elements is a tin-oxide sensor element.

8. The system defined in claim 1 wherein said first sensor comprises at least one tin-oxide sensor element and said second sensor is at lest one heated vanadate or vanadium-pentoxide sensor element responsive to the presence of nitrogen oxides.

9. The system defined in claim 8 wherein said second sensor contains iron, chromium or tungsten.

10. The system defined in claim 8 wherein said second sensor contains oxides of trivalent metals or mixtures thereof and includes SnO₂, In₂ O₃ and In³⁺.

11. The system defined in claim 10 wherein said second sensor includes at least one second sensor element comprised of a mixture of chromium oxide and niobium oxide.

12. The system defined in claim 10 wherein said mixture consists essentially of 90% chromium oxide and 10% niobium oxide.

13. The system defined in claim 10 wherein said second sensor comprises at least one second sensor element comprised of an n-conductivity homogeneous semiconductor and a metal oxide gas-sensitive layer.

14. The system defined in claim 13 wherein said metal oxide gas-sensitive layer is reduced tin oxide.

15. The system defined in claim 13 wherein said second sensor element contains catalytic additive and a noble metal layer.

16. The system defined in claim 15 wherein said at least one second sensor element is composed of a heated wire of a catalytic material covered by platinum, gold, rhodium or palladium.

17. The system defined in claim 13 wherein said at least one second sensor element is composed of tin dioxide containing catalytic additives, zinc oxide with catalytic additives or iron oxide with catalytic additives.

18. The system defined in claim 13 wherein said at least one second sensor element comprises a mixture of a catalytic element and a noble metal.

19. The system defined in claim 13 wherein said at least one second sensor element contains catalytic quantities of palladium, platinum, rhodium or gold.

20. The system defined in claim 1 wherein said second sensor includes at least one second sensor element formed by a heated molybdate semiconductor, a heated zirconium oxide semiconductor, or a Clark cell with a solid electrolyte provided at a gas inlet side with a finely divided transition metal catalyst and formed with at lest one electrode for measuring conductivity.

21. The system defined in claim 20 wherein said finely divided transition metal is platinum or palladium.

22. The system defined in claim 20 wherein said at least one second sensor element is a molybdate semiconductor containing bismuth or iron.

23. The system defined in claim 20 wherein said at least one second sensor element is a sintered molybdate body.