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Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction

  • US 5,217,907 A
  • Filed: 01/28/1992
  • Issued: 06/08/1993
  • Est. Priority Date: 01/28/1992
  • Status: Expired due to Term
First Claim
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1. A method of extracting an impurity profile from a diced semiconductor chip that has a matrix of device cells formed therein, each cell having a substantially-identically-constructed dopant region formed therein, the matrix being arranged as parallel rows and columns of said cells such that adjacent columns have a defined column pitch ax and adjacent rows have a defined row spacing ay, the method comprising the steps of:

  • (a) bevelling the semiconductor chip from its original surface to expose the dopant regions of said cells such that the same point in the dopant region of cells of adjacent rows is at differing depths;

    (b) placing the two probes of a SRP device in the dopant region of first and second measurement cells in the same row of the matrix such that the distance Δ

    X between the probes is max, where m is an integer;

    (c) measuring the total resistance RT between the two probes;

    (d) stepping the SRP device through a series of rows of the matrix to contact two cells in the same column as the first and second measurement cells, the stepping distance Δ

    Y in each case being nay, where n is an integer.whereby the bevelling of the chip causes the SRP probes to contact a different point in the y direction in the dopant region of cells in different rows;

    (e) taking a total resistance RT measurement at each step of the SRP device; and

    (f) combining the plurality of total resistance measurements to obtain a doping profile of the dopant region.

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