Method for forming pitch independent contacts and a semiconductor device having the same
First Claim
1. A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
depositing a first insulating layer over the semiconductor substrate;
depositing an etch stop layer of a first material which overlies the insulating layer;
depositing a second insulating layer over the etch stop layer, the second insulating layer being substantially planar and having the ability to be etches selectively to the first material;
depositing and patterning a photoresist layer on the second insulating layer;
etching the second insulating layer, using the photoresist layer as an etch mask, to form a frame structure which has a first opening formed therein, the first opening exposing all portions of the etch stop layer underlying the first opening;
removing the exposed portions of the etch stop layer to expose portions of the first insulating layer underlying the first opening;
anisotropically etching the exposed portions of the first insulating layer to form a second opening in the second insulating layer, wherein the second opening defines a contact region and wherein the second opening is smaller than the first opening; and
forming a contact in the contact region.
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Accused Products
Abstract
A contact is formed in a semiconductor device (10), independent of underlying topography or pitch. In one method of the present invention, an insulating layer (18) is deposited over a semiconductor substrate (12). An etch stop layer (20) is deposited over the insulating layer. A frame structure (22) is formed on the etch stop material and defines at least one contact region (23 and/or 25) within which the etch stop material is exposed. The exposed portions of the etch stop material are removed from the contact region to expose a portion of the insulating layer. The exposed portion of the insulating layer is then anisotropically etched and at least one contact (30 and/or 32) is formed in the contact region. Depending on where the contact region is positioned, either a self-aligned contact or a non-self-aligned contact may be formed, or both types of contacts may be formed simultaneously.
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Citations
24 Claims
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1. A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:
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providing a semiconductor substrate; depositing a first insulating layer over the semiconductor substrate; depositing an etch stop layer of a first material which overlies the insulating layer; depositing a second insulating layer over the etch stop layer, the second insulating layer being substantially planar and having the ability to be etches selectively to the first material; depositing and patterning a photoresist layer on the second insulating layer; etching the second insulating layer, using the photoresist layer as an etch mask, to form a frame structure which has a first opening formed therein, the first opening exposing all portions of the etch stop layer underlying the first opening; removing the exposed portions of the etch stop layer to expose portions of the first insulating layer underlying the first opening; anisotropically etching the exposed portions of the first insulating layer to form a second opening in the second insulating layer, wherein the second opening defines a contact region and wherein the second opening is smaller than the first opening; and forming a contact in the contact region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:
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providing a semiconductor substrate having two conductive members formed thereon, each of the conductive members having an overlying dielectric layer; conformally depositing a first insulating material over the conductive members and the semiconductor substrate; conformally depositing a conductive etch stop layer which overlies the first insulating material; depositing a second insulating material overlying the conductive etch stop layer; etching the second insulating material selective to the underlying conductive etch stop layer to form a disposable frame structure which defines first and second spaced apart contact regions, the first contact region overlying at least a portion of one of the two conductive members and the conductive etch stop layer being exposed within both the first and second contact regions; removing the conductive etch stop layer exposed within the first and second contact regions to expose a portion of the first insulating material within each contact region; anisotropically etching the exposed portions of the first insulating material to form at least one sidewall spacer along a side of one of the conductive members and to expose a portion of the semiconductor substrate within the first contact region; forming a first contact in the first contact region which is electrically coupled to the exposed portion of the semiconductor substrate; removing the disposable frame structure to expose remaining portions of the conductive etch stop layer; and etching portions of the exposed conductive etch stop layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:
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providing a semiconductor substrate; depositing a first insulating layer over the semiconductor substrate; depositing an etch stop layer which overlies the first insulating layer; depositing a second insulating layer overlying the etch stop layer, the second insulating layer having the ability to be etched selectively to the etch stop layer; patterning the second insulating layer to form a frame structure, the frame structure having an opening which defines a contact region and exposes the etch stop layer within the contact region; removing the exposed etch stop layer within the contact region to expose a portion of the first insulating layer; anisotropically etching the exposed portion of the insulating layer within the contact region; forming a contact in the contact region; and removing the frame structure from the device. - View Dependent Claims (21, 22, 23, 24)
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Specification