×

Method for forming pitch independent contacts and a semiconductor device having the same

  • US 5,219,793 A
  • Filed: 06/03/1991
  • Issued: 06/15/1993
  • Est. Priority Date: 06/03/1991
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:

  • providing a semiconductor substrate;

    depositing a first insulating layer over the semiconductor substrate;

    depositing an etch stop layer of a first material which overlies the insulating layer;

    depositing a second insulating layer over the etch stop layer, the second insulating layer being substantially planar and having the ability to be etches selectively to the first material;

    depositing and patterning a photoresist layer on the second insulating layer;

    etching the second insulating layer, using the photoresist layer as an etch mask, to form a frame structure which has a first opening formed therein, the first opening exposing all portions of the etch stop layer underlying the first opening;

    removing the exposed portions of the etch stop layer to expose portions of the first insulating layer underlying the first opening;

    anisotropically etching the exposed portions of the first insulating layer to form a second opening in the second insulating layer, wherein the second opening defines a contact region and wherein the second opening is smaller than the first opening; and

    forming a contact in the contact region.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×