Integrated micromechanical sensor element

• US 5,220,188 A
• Filed: 07/06/1983
• Issued: 06/15/1993
• Est. Priority Date: 07/06/1983
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Higashi, Robert E., Johnson, Robert G.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): PRENTY, MARK V
• Application Number:
  US06/511,369
• Time in Patent Office: 3,632 Days
• Field of Search: 357/29, 357/25, 357/26, 357/28, 357/29, 357/55, 29/573, 338/15, 338/18, 338/22 SD, 156/647
• US Class Current: 257/467
• CPC Class Codes: H10N 15/10 Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semiconductor means such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow a high density of sensor elements to provide an efficient array.

Claims

1. An integrated micromechanical sensor element for use in an array of sensor elements which are adapted to respond to radiation, including:

single crystal semiconductor means containing a plurality of planes comprising a family of (111) planes defined by the specific crystalline structure within said semiconductor means;

said semiconductor means having a generally flat surface supporting radiation sensing means having two leadout means;

at least two separate surface areas which semi-enclosure said sensing means;

said two surface areas defining at least two leadout areas which each of said leadout areas providing a support upon which said sensor leadout means are located;

a pit below said radiation sensing means to substantially thermally isolate said sensing means from the balance of said semiconductor means with said pit anisotropically etched through said two surface areas and limited in size by said planes within said single crystal semiconductor means;

said planes intersecting said two surface areas which semi-enclose said sensing means to define a perimeter of said pit to generally correspond with said two surface area; and

said two surface areas having sides that lie along and perpendicular to a direction of said specific crystalline structure.

2. An integrated micromechanical sensor element as described in claim 1 wherein said separate surface areas are displaced from each other to provide said leadout areas;

and said separate areas further effectively interlock in directions along and perpendicular to said direction of said specific crystalline structure.

3. An integrated micromechanical sensor element as described in claim 2 wherein said areas each are shaped to include at least two convex inner corners.

4. An integrated micromechanical sensor element as described in claim 3 wherein said single crystal semiconductor means is silicon.

5. An integrated micromechanical sensor element as described in claim 4 wherein said surface areas each include a pair of parallel legs and a connecting bight that is generally perpendicular to said legs.

6. An integrated micromechanical sensor element as described in claim 5 wherein each of said surface areas is substantially the same in configuration and size with a leg and a bight of each surface area generally adjacent to a separate side of said sensing means.

7. An integrated micromechanical sensor element as described in claim 5 wherein each of said surface areas is substantially of the same configuration but of different sizes so that the legs of a first of said surface areas fit between the legs of a second of said surface areas with the bights of both surface areas generally parallel in position while being on opposite sides of said sensing means;

said legs of said surface areas defining said two leadout areas.

8. An integrated micromechanical sensor element as described in claim 7 wherein said legs of said surface areas define said two leadout areas;

said two leadout areas being of minimum size to support said sensor means over said pit while providing support for said sensor leadout means.

9. An integrated micromechanical sensor element as described in claim 2 wherein said surface areas are four in number and are substantially the same in configuration;

one each of said surface areas being adjacent a side of said sensing means; and

adjacent edges of said surface areas defining said two leadout areas.

10. An integrated micromechanical sensor element as described in claim 9 wherein said single crystal semiconductor means is silicon.

11. An integrated micromechanical sensor element as described in claim 6 wherein said legs of said surface areas define said two leadout areas;

said two leadout areas being of minimum size to support said sensor means over said pit while providing support for said sensor leadout means.

12. An integrated micromechanical sensor element as described in claim 9 wherein said legs of said surface areas define said two leadout areas;

said two leadout areas being of minimum size to support said sensor means over said pit while providing support for said sensor leadout means.