Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
First Claim
1. A photovoltaic cell for generating electromotive force from light incident in the vicinity of the junction between two semiconductor layers having opposite conductivity types, comprising:
- a substrate having a textured surface with the depth of the texture being in the range of from about 0.3 to about 10 μ
m;
a first polycrystalline semiconductive layer obtained by heat treatment at a temperature in the range of from about 500°
C. to about 650°
C. of a semiconductive film of one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said textured surface;
a photo-activation layer of a polycrystalline semiconductive film obtained by heat treatment of a semiconductive film of the one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said first polycrystalline semiconductive layer; and
a second polycrystalline semiconductive layer obtained by heat treatment of a semiconductive film of opposite conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said photo-activation layer.
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Abstract
A thin film transistor and a photovoltaic cell wherein a polycrystalline semiconductive film, having a large grain size and high carrier mobility obtained by heat treatment of a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like on a substrate with a textured surface, is used as a channel layer or a photo-activation layer, the textured surface being formed by etching one surface of the substrate or forming a textured thin film on the substrate.
A method of manufacturing a polycrystalline semiconductive film, wherein a surface of a substrate is etched or a textured thin film is formed on the substrate to form a textured surface, and a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like is formed on the textured surface, and the semiconductive film is polycrystallized by heat treatment.
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Citations
18 Claims
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1. A photovoltaic cell for generating electromotive force from light incident in the vicinity of the junction between two semiconductor layers having opposite conductivity types, comprising:
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a substrate having a textured surface with the depth of the texture being in the range of from about 0.3 to about 10 μ
m;a first polycrystalline semiconductive layer obtained by heat treatment at a temperature in the range of from about 500°
C. to about 650°
C. of a semiconductive film of one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said textured surface;a photo-activation layer of a polycrystalline semiconductive film obtained by heat treatment of a semiconductive film of the one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said first polycrystalline semiconductive layer; and a second polycrystalline semiconductive layer obtained by heat treatment of a semiconductive film of opposite conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said photo-activation layer.
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2. A photovoltaic cell for generating electromotive force from light incident in the vicinity of the junction between two semiconductor layers having different conductivity types, comprising:
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a substrate having a textured surface with the depth of the texture being in the range of from about 0.3 to about 10 μ
m;a first polycrystalline semiconductive layer obtained by heat treatment at a temperature in the range of from about 500°
C. to about 650°
C. of a semiconductive film of one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said textured surface;a photo-activation layer of a polycrystalline semiconductive film obtained by heat treatment of a semiconductive film of said one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said first semiconductive layer; and a second semiconductive layer of an amorphous semiconductive film having the opposite conductivity type formed on said photo-activation layer.
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3. A photovoltaic cell for generating electromotive force from light incident in the vicinity of the junction between two semiconductors of opposite conductivity types, comprising:
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a single crystalline semiconductive substrate of one conductivity type having a textured surface with the depth of the texture being in the range of from about 0.3 to about 10 μ
m; anda polycrystalline semiconductive layer obtained by heat treatment at a temperature in the range of from about 500°
C. to about 650°
C. of a semiconductive film of the opposite conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said textured surface.
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4. A photovoltaic cell for generating electromotive force from light incident in the vicinity of a semiconductor layer between two semiconductors of opposite conductivity types, comprising:
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a substrate having a textured surface with the depth of the texture being in the range of from about 0.3 to about 10 μ
m;a first polycrystalline semiconductive layer obtained by heat treatment at a temperature in the range of from about 500°
C. to about 650°
C. of a semiconductive film of one conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said textured surface;a photo-activation layer of a polycrystalline semiconductive film obtained by heat treatment of an intrinsic or substantially intrinsic semiconductive film selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said first polycrystalline semiconductive layer; and a second polycrystalline semiconductive layer obtained by heat treatment of a non-single crystalline film of the opposite conductivity type selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films formed on said photo-activation layer.
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5. A method of manufacturing a polycrystalline semiconductive film, comprising the steps of:
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forming a textured surface on a substrate with the depth of the texture being in the range of from about 0.3 to about 10 μ
m;forming a semiconductive film selected from the group consisting of amorphous, polycrystalline, microcrystalline, and their mixed crystalline semiconductive films on said textured surface; and polycrystallizing said semiconductive film via heat treatment at a temperature in the range of from about 500°
C. to about 640°
C. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification