Gas injectors for reaction chambers in CVD systems

• US 5,221,556 A
• Filed: 06/24/1987
• Issued: 06/22/1993
• Est. Priority Date: 06/24/1987
• Status: Expired due to Term

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Epsilon Technology Incorporated (ASM International NV)
• Inventors: Hawkins, Mark R., Robinson, McDonald
• Primary Examiner(s): Lawrence, Evan
• Application Number:
  US07/066,019
• Time in Patent Office: 2,190 Days
• Field of Search: 118/715, 118/50.1, 118/725, 118/730, 156/611, 427/255, 427/248.1
• US Class Current: 427/255.17
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90° for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.

Claims

1. In a CVD system having a reaction chamber defining a longitudinal axis in substantial alignment with the flow path of the gas passing therethrough for processing at least one substrate at a time, an improved gas injector apparatus for injecting at least a reactant gas into the gas input of the reaction chamber, said improved gas injector apparatus comprising:

a source of reactant gas;

an injector body having a laterally disposed, substantially hollow, gas distribution manifold chamber contained therein, said injector body including a gas input channel communicating between a reactant gas inlet and said gas distribution manifold chamber;

means for supplying reactant gas from said source into the gas inlet of said injector body at a predetermined flow rate;

said gas distribution manifold chamber including means for distributing the received gas in opposed lateral directions within said gas distribution manifold chamber and throughout the length of said injector body;

a manifold member disposed within said gas distribution chamber, said manifold member including selectively dimensioned outlet means for producing a predetermined desired shaped gas velocity profile of the gas passing therethrough; and

means for diverting the gas flow 90° and

into the gas input of the reaction chamber as an injected gas flow having a desired shaped gas velocity profile.

2. In a CVD system having a reaction chamber defining a horizontal longitudinal axis in substantial alignment with the flow path of the gas passing therethrough for processing at least one horizontally oriented substrate at a time and improved gas injector apparatus for injecting at least a reactant gas into the gas input of the reaction chamber, said improved gas injector apparatus comprising:

a source of reactant gas;

a unitary gas injector means for producing a predetermined desired shaped gas velocity profile and injecting the gas at the predetermined desired shaped gas velocity profile into the reactant gas input of the reaction chamber, said unitary gas injector means being oriented generally parallel with the plane defined by the substrate to be processed, whereby the predetermined desired shaped gas velocity profile extends across the substrate in a plane parallel with the substrate; and

means for conveying said source of reactant gas at a predetermined gas flow rate into said unitary gas injector means.

3. The system of claim 2 wherein said injector means includes:

a first elongated body having a generally rectangular cross-section extending across the width of the reaction chamber;

a second elongated body having a generally rectangular cross section extending across the width of the reaction chamber;

an elongated lateral cavity extending between said first and second elongated bodies for forming a hollow reaction gas cavity, one end of said cavity including means operatively connected between said first and second elongated bodies for closing said cavity and the opposite end of said cavity being open and coextensive with the gas input at the front end of the reaction chamber for supplying a uniform flow of reactant gas thereto;

a gas supply inlet operably disposed along the surface of said first elongated body proximate the center thereof;

means for supplying reactant gas under pressure to said gas supply inlet;

a gas distribution manifold chamber extending substantially the entire length of said first elongated body for distributing the reactant gas in opposed directions therethrough, said gas distribution manifold chamber having an outlet opening onto said cavity;

an elongated manifold member disposed within said gas distribution manifold chamber for substantially closing said outlet of said gas distribution manifold member, said manifold member including a plurality of spacer legs operatively disposed between one surface of said manifold member and a wall of said gas distribution manifold chamber, said spacer legs providing formed slots therebetween having increasing dimensions toward a central spacer leg and decreasing toward edge spacer legs for passing the reactant gas through said slots from said gas distribution manifold chamber to said cavity the flow of reactant gas being turned ninety degrees and into alignment with the longitudinal axis of the reaction chamber within said cavity to provide a gas flow pattern with a predetermined desired gas velocity profile determined by the shape of said slots and to obtain a more uniform deposition on the wafer.

4. The improved gas injector apparatus of claim 2 wherein said manifold member includes a plurality of spacer legs for forming predetermined desired shaped slots therebetween, each of said slots increasing linearly in size toward the center of said manifold member for producing a predetermined desired shaped gas velocity profile of the gas passing therethrough.

5. The improved gas injector apparatus of claim 4 wherein said manifold member includes a first pair of relatively short outer spacers legs, a pair of intermediate spacer legs, and a central spacer leg, a first pair of slots, each slot being defined by one of said pair of intermediate spacer legs and said central spacer leg, respectively;

each of said slots having its height increasing linearly toward said center spacer leg whereby the largest dimensions of each of said slots is disposed toward the central portion of said manifold member and the smallest dimensions of each of said slots is disposed toward said outer spacer legs; and

as reactant gas is supplied from the source to said unitary gas injector at a predetermined gas flow rate, the volume through each of said slots increases as the dimensions of said slots increases and a predetermined desired shaped gas velocity profile will be produced having its maximum at the center portion and its minimum at the side portion of said manifold member.

6. In an epitaxial deposition system including a reaction chamber defining a longitudinal axis in substantial alignment with the flow path of the gas passing therethrough and having a generally hollow interior, a susceptor means operably disposed within the hollow interior of said reaction chamber for removably mounting a single wafer to be processed thereon on a single wafer-at-a-time basis, a source of reactant gas, and injector means for injecting the reactant gas into the reaction chamber, means for supplying the reactant gas from the source to said injector means at a predetermined gas flow rate, said injector means comprising:

a first elongated body having a generally rectangular cross-section extending across the width of the reaction chamber;

a second elongated body having a generally rectangular cross section extending across the width of the reaction chamber;

an elongated lateral cavity extending between said first and second elongated bodies for forming a hollow reaction gas cavity, one end of said cavity including means operatively connected between said first and second elongated bodies for closing said cavity, the opposite end of said cavity being open and coextensive with the front end of the reaction chamber for supplying a uniform flow of reactant gas thereto;

a gas supply inlet operably disposed along the top surface of said first elongated body proximate the center thereof;

means for supplying the reactant gas under pressure to said gas supply inlet;

a gas distribution manifold chamber extending substantially the entire length of said first elongated body for distributing the reactant gas in opposed horizontal directions therethrough, said gas distribution manifold chamber having an outlet opening onto said cavity;

an elongated manifold member substantially closing said outlet of said gas distribution manifold chamber, said manifold member including a plurality of spacer legs operatively disposed between one surface thereof and a wall of said gas distribution manifold chamber, said spacer legs providing formed slots therebetween for conveying the reactant gas, the dimensions of said slots increasing toward the center and decreasing toward the opposed edges of said manifold member, said slots interconnecting said gas distribution manifold chamber with said cavity in a substantially downward direction, the flow of reactant gas being turned ninety degrees and into alignment with the longitudinal axis of the reaction chamber within said cavity to provide a gas flow pattern with a predetermined desired gas velocity profile determined by the shape of said slots.

7. A gas injection apparatus for use in a CVD system including a reaction chamber having a hollow interior, a susceptor means operably positioned within the hollow interior for removably positioning at least one wafer thereon, and a reactant gas input, said gas injection apparatus including:

a source of reactant gas;

a unitary injector body having a generally hollow gas distribution manifold chamber extending substantially therethrough;

a gas inlet means for receiving reactant gas from said source at a predetermined gas flow rate and for conveying same to said gas distribution manifold chamber;

said gas distribution manifold chamber including means for distributing the reactant gas supplied thereto in opposed directions;

means for turning the received reactant gas approximately 90° and

directing same into the gas input of the reaction chamber at a predetermined desired gas velocity profile for deposition on at least one wafer being processed within the reaction chamber;

a gas delivery chamber having an input portion and an output means for supplying the reactant gas at the predetermined desired gas velocity profile into said gas injector cavity; and

said gas distribution manifold chamber including at least one manifold member having a plurality of different and distinctly dimensioned openings therein for producing the predetermined desired gas velocity profile for the gas passing from said gas distribution manifold chamber into said turning means.

8. The gas injector apparatus of claim 7 wherein said manifold member includes a plurality of spacer legs separated by slots whose height increases linearly from the edge portions of said manifold member toward the center thereof for producing the predetermined desired gas velocity profile of the injected reactant gas.

9. In a CVD system including a reaction chamber having a substantially hollow interior of the reaction operably disposed within the hollow interior of the reaction chamber for removably mounting a single wafer to be processed therein, a gas input to the reaction chamber, an injector having a unitary body and a substantially hollow gas distribution manifold chamberformed therein, the method of producing and injecting a predetermined desired shaped gas velocity profile for the gas injected into the gas input of the reaction chamber comprising the steps of:

supplying reactant gas from a reactant gas source into the injector;

distributing the reactant gas in opposed directions within the gas distribution manifold chamber of the injector;

providing a plurality of predetermined selectively dimensioned openings in a manifold member, which openings are dimensionally larger in the central portion of the manifold member and dimensionally smaller outwardly toward the ends of the manifold member;

passing the reactant gas from the gas distribution manifold chamber through the openings of the manifold member and into a gas discharge chamber;

shaping the gas flow into a predetermined desired gas velocity profile on passage through the openings of the manifold member;

injecting the gas from the gas discharge chamber into a turning chamber; and

turning the gas flow 90° and

directing the predetermined desired gas velocity profile into the gas input of the reaction chamber.