Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
First Claim
1. The method for depositing a single crystalline, epitaxial SiC film on a single crystalline Si substrate which comprises, in combination, the steps of(a) treating the surface of the single crystalline silicon substrate to remove the surface layer of SiO2 from said silicon substrate;
- followed by(b) heating said substrate to temperature in the range of from about 600°
to about 1000°
C. and flowing a gaseous stream comprising a compound composed of Si, H and C over said heated substrate, to thereby deposit a single crystalline epitaxial SiC film onto said substrate, wherein said compound contains Si and C in 1;
1 atomic ratio.
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Abstract
Single crystalline, epitaxial, stoichiometric SiC films are deposited on single crystalline silicon substrates by a procedure which involves first treating the surface of the silicon substrate to remove any surface layer of SiO2, followed by heating the substrate to temperature within the range of from about 600° to about 1000°0 C. and flowing a stream including a gaseous compound of Si, H and C--free of halogen and containing Si and C in 1:1 atomic ratio--over the heated substrate.
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Citations
29 Claims
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1. The method for depositing a single crystalline, epitaxial SiC film on a single crystalline Si substrate which comprises, in combination, the steps of
(a) treating the surface of the single crystalline silicon substrate to remove the surface layer of SiO2 from said silicon substrate; - followed by
(b) heating said substrate to temperature in the range of from about 600°
to about 1000°
C. and flowing a gaseous stream comprising a compound composed of Si, H and C over said heated substrate, to thereby deposit a single crystalline epitaxial SiC film onto said substrate, wherein said compound contains Si and C in 1;
1 atomic ratio. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
- followed by
Specification