Method of manufacturing semiconductor device

• US 5,225,036 A
• Filed: 09/13/1991
• Issued: 07/06/1993
• Est. Priority Date: 03/28/1988
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Okumura, Katsuya, Watanabe, Tohru
• Primary Examiner(s): DANG, THI D
• Application Number:
  US07/759,903
• Time in Patent Office: 662 Days
• Field of Search: 156/643, 156/646, 156/657, 156/662, 134/1, 134/2, 427/307, 427/309
• US Class Current: 438/597
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288

Abstract

A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

removing a silicon oxide film on a silicon layer of an intermediate semiconductor device, by using active species derived form a mixed gas of gaseous halogen compound and gaseous oxygen, under the condition that a difference between the etching speeds of said silicon layer and said silicon oxide film is made as small as possible by controlling a ratio of the flow of said gaseous oxygen to that of said mixed gas and the temperature of said intermediate semiconductor device; and

forming a covering film on the surface of the silicon layer with said silicon oxide film removed therefrom,

said removing step being performed under the etching condition that the ratio of the etching speeds of said silicon layer to said silicon oxide film is less than or equal to 5,

said etching condition having the etching speed ratio of less than or equal to 5 is obtained by satisfying the following formula;

space="preserve" listing-type="equation">Y≧

-0.13T+106.3

where Y is a percent flow ratio of said gaseous oxygen to said mixed gas, and T is the temperature (°

C.) of said intermediate semiconductor device.

2. A method according to claim 1, wherein said gaseous halogen compound is selected form the group consisting of CF₄, NF₃, Cl₂, CHF₃ and CFCl₃.

3. A method according to claim 1, wherein said covering film is selected from the group consisting of poly silicon, silicon nitrite, polysilicon containing arsenic, silicon oxide containing arsenic, polysilicon containing boron, and silicon oxide containing boron.

4. A method according to claim 2, wherein said covering film is selected form the group consisting of polysilicon, silicon nitride, polysilicon containing arsenic, silicon oxide containing arsenic, polysilicon containing boron, and silicon oxide containing boron.

5. A method according to claim 1, wherein said covering film is formed by oxidizing the surface of said silicon layer to form a silicon oxide film on the surface of said silicon layer.

6. A method according to claim 2, wherein said covering film is formed by oxidizing the surface of said silicon layer to form a silicon oxide film on the surface of said silicon layer.

7. A method according to claim 1, wherein said covering film is formed by selectively depositing tungsten on the surface of said silicon layer using a selective CVD method.

8. A method according to claim 2, wherein said covering film is formed by selectively depositing tungsten on the surface of said silicon layer using a selective CVD method.

9. A method according to claim 1, wherein said covering film is formed by depositing aluminum or some other metal with a high melting point on the surface of said silicon layer by a sputtering method.

10. A method according to claim 1, wherein said covering film is formed by depositing aluminum or some other metal with a high melting point on the surface of said silicon layer by a sputtering method.